BU1006A-E3/45

BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers FEATURES isoCink+™ • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Superior thermal conductivity + ~ ~ - ~ ~ + Case Style BU Available • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS + ~ ~ General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, and white-goods applications. - MECHANICAL DATA LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 600 V, 800 V, 1000 V IFSM 90 A IR 5 μA VF at IF = 5.0 A 0.94 V TJ max. 150 °C Package BU Circuit configurations In-line Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 1A whisker test Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range TC = 90 °C (1) TA = 25 °C (2) SYMBOL BU1006A BU1008A BU1010A UNIT VRRM 600 800 1000 V IO 10 3.0 A IFSM 90 A I2t 33 A2s TJ, TSTG -55 to +150 °C Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air Revision: 08-Jul-2022 Document Number: 84800 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C Maximum instantaneous forward voltage per diode (1) IF = 5.0 A Maximum reverse current per diode rated VR Typical junction capacitance per diode 4.0 V, 1 MHz TA = 125 °C TA = 25 °C TA = 125 °C VF IR CJ TYP. MAX. 1.02 1.10 0.94 1.00 - 5.0 45 250 30 - UNIT V μA pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance BU1006A BU1008A RθJC (1) 3.0 RθJA (2) 20 BU1010A UNIT °C/W Notes With 60 W air cooled heatsink (2) Without heatsink, free air (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY BU1006A-E3/45 4.48 45 20 DELIVERY MODE Tube BU1006A-E3/51 4.48 51 250 Paper tray BU1006A-M3/45 4.48 45 20 Tube Revision: 08-Jul-2022 Document Number: 84800 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 100 Instantaneous Forward Current (A) Average Forward Output Current (A) 12 10 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom 8 6 TC TC 4 2 20 40 80 60 100 120 140 160 TJ = 125 °C TJ = 25 °C 0.1 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 4 - Typical Forward Characteristics Per Diode 1000 Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 1 Case Temperature (°C) 4 3 2 1 Without Heatsink Sine-Wave, R-Load Free Air, TA 0 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Current Derating Curve Fig. 5 - Typical Reverse Characteristics Per Diode 100 24 20 Junction Capacitance (pF) Forward Power Dissipation (W) 10 0.01 0.2 0 0 TJ = 150 °C 16 12 8 4 10 0 0 1 2 3 4 5 6 7 8 9 10 11 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 3 - Forward Power Dissipation Fig. 6 - Typical Junction Capacitance Per Diode Revision: 08-Jul-2022 Document Number: 84800 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) View A 0.020R (TYP.) 0.125 (3.2) x 45° Chamfer 0.080 (2.03) 0.060 (1.52) 0.310 (7.9) 0.290 (7.4) 0.160 (4.1) 0.140 (3.5) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R + 9° TYP. ~ ~ 0.085 (2.16) 0.065 (1.65) - 5° TYP. 0.048 (1.23) 0.039 (1.00) 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.040 (1.02) 0.100 (2.54) 0.085 (2.16) 0.190 (4.83) 0.210 (5.33) 0.028 (0.72) 0.020 (0.52) 0.080 (2.03) 0.065 (1.65) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) REF. 0.094 (2.39) x 45° REF. R 0.11 (2.78) REF. 0.64 (16.28) REF. 0.62 (15.78) REF. R 0.10 (2.60) REF. 0.055 (1.385) REF. Revision: 08-Jul-2022 Document Number: 84800 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor APPLICATION NOTE 1. Device UL approved for safety use dielectric strength of 1500 V 2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. 3. Heat sink shape recommendation: (3) 2.5 mm MIN. Heatsink 2.5 mm MIN. By Safety Requirements Revision: 08-Jul-2022 Document Number: 84800 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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