BU1506-E3/51

BU1506, BU1508, BU1510 www.vishay.com Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers FEATURES • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction + ~ ~ - ~ ~ + isoCink+™ • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU15065S) Available • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 Case Style BU • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS + ~ ~ General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. - MECHANICAL DATA PRIMARY CHARACTERISTICS Package BU IF(AV) 15 A VRRM 600 V, 800 V, 1000 V IFSM 200 A IR 5 μA VF at IF = 7.5 A 0.87 V TJ max. 150 °C Circuit configuration In-line Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 1A whisker test Polarity: as marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage TC = 80 °C (1) Average rectified forward current (Fig. 1, 2) TA = 25 °C (2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range SYMBOL BU1506 BU1508 BU1510 UNIT VRRM 600 800 1000 V 15 IO A 3.4 IFSM 200 A I2t 160 A2s TJ, TSTG -55 to +150 °C Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) IF = 7.5 A Maximum reverse current per diode rated VR Typical junction capacitance per diode 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF IR CJ TYP. MAX. 0.97 1.05 0.87 0.95 - 5.0 90 250 70 - UNIT V μA pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Revision: 29-Aug-17 Document Number: 84803 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU1506, BU1508, BU1510 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BU1508 2.5 RJA (2) 20 RJC Typical thermal resistance BU1506 (1) BU1510 UNIT °C/W Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY BU1506-E3/45 4.75 45 20 DELIVERY MODE Tube BU1506-E3/51 4.75 51 250 Paper tray BU1506-M3/45 4.75 45 20 Tube BU15065S-E3/45 4.75 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) 36 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom 15 10 TC TC 5 Forward Power Dissipation (W) Average Forward Output Current (A) 20 0 28 24 20 16 12 8 4 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Forward Power Dissipation 18 100 Instantaneous Forward Current (A) 5 Average Forward Rectified Current (A) 32 4 3 2 Without Heatsink Sine-Wave, R-Load Free Air, TA 1 0 0 25 50 75 100 125 150 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 25 °C 0.1 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Forward Current Derating Curve Fig. 4 - Typical Forward Characteristics Per Diode Revision: 29-Aug-17 Document Number: 84803 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU1506, BU1508, BU1510 www.vishay.com Vishay General Semiconductor 1000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Reverse Current (µA) 1000 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 100 10 0.01 10 20 30 40 50 60 70 80 90 1 0.1 100 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) View A 0.020R (TYP.) 0.125 (3.2) x 45° Chamfer 0.080 (2.03) 0.060 (1.52) 0.310 (7.9) 0.290 (7.4) 0.160 (4.1) 0.140 (3.5) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R + 9° TYP. ~ ~ 0.085 (2.16) 0.065 (1.65) - 5° TYP. 0.048 (1.23) 0.039 (1.00) 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.040 (1.02) 0.100 (2.54) 0.085 (2.16) 0.190 (4.83) 0.210 (5.33) 0.028 (0.72) 0.020 (0.52) 0.080 (2.03) 0.065 (1.65) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) REF. 0.094 (2.39) x 45° REF. R 0.11 (2.78) REF. 0.64 (16.28) REF. 0.62 (15.78) REF. R 0.10 (2.60) REF. 0.055 (1.385) REF. Revision: 29-Aug-17 Document Number: 84803 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU1506, BU1508, BU1510 www.vishay.com Vishay General Semiconductor FORMING SPECIFICATION: BU-5S in inches (millimeters) 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) + 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R 0.080 (2.03) 0.060 (1.52) 9° TYP. 0.020R (TYP.) 0.085 (2.16) 0.065 (1.65) ~ ~ - 0.100 (2.54) 0.085 (2.16) 5° TYP. 0.219 (5.55) MAX. 0.315 (8.0) 0.276 (7.0) 0.134 (3.40) 0.087 (2.20) 0.080 (2.03) 0.065 (1.65) 0.319 (8.10) 0.272 (6.90) 0.319 (8.10) 0.272 (6.90) 0.028 (0.72) 0.020 (0.52) APPLICATION NOTE 1. Device UL approved for safety use dielectric strength of 1500 V. 2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. 3. Heat sink shape recommendation: (3) 2.5 mm MIN. Heatsink 2.5 mm MIN. By Safety Requirements Revision: 29-Aug-17 Document Number: 84803 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000