BU2006-M3/45

BU2006-M3, BU2008-M3, BU2010-M3 www.vishay.com Vishay General Semiconductor Enhanced isoCink+TM Bridge Rectifiers FEATURES isoCink+™ • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package + ~ ~ - ~ ~ + Case Style BU • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU20065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. PRIMARY CHARACTERISTICS Package General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test BU IF(AV) 20 A VRRM 600 V, 800 V, 1000 V IFSM 240 A IR 5 μA VF at IF = 10 A 0.85 V TJ max. 150 °C Diode variations In-Line per Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range TC = 61 °C (1) TA = 25 °C (2) SYMBOL BU2006 BU2008 BU2010 UNIT VRRM 600 800 1000 V IO 20 3.5 A IFSM 240 A I2t 239 A2s TJ, TSTG - 55 to + 150 °C Notes (1) With heatsink (2) Without heatsink, free air Revision: 26-Jun-13 Document Number: 89298 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU2006-M3, BU2008-M3, BU2010-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS TA = 25 °C Maximum instantaneous forward voltage per diode (1) IF = 10 A Maximum reverse current per diode rated VR Typical junction capacitance per diode 4.0 V, 1 MHz TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF IR TYP. MAX. 0.95 1.05 0.85 0.95 - 5.0 110 350 95 - CJ UNIT V μA pF Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance BU2006 BU2008 RJC (1) 2.4 RJA (2) 20 BU2010 UNIT °C/W Notes With 60 W air cooled heatsink (2) Without heatsink, free air (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU2006-M3/45 4.76 45 20 Tube BU2006-M3/51 4.76 51 250 Paper tray BU20065S-M3/45 4.76 45 20 Tube  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 5 Average Forward Rectified Current (A) Average Forward Output Current (A) 24 20 16 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom 12 TC TC 8 4 0 4 3 2 Without Heatsink Sine-Wave, R-Load Free Air, TA 1 0 0 25 50 75 100 125 150 0 25 50 75 100 125 Case Temperature (°C) Ambient Temperature (°C) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Forward Current Derating Curve Revision: 26-Jun-13 150 Document Number: 89298 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU2006-M3, BU2008-M3, BU2010-M3 www.vishay.com Vishay General Semiconductor 1000 Instantaneous Reverse Current (µA) Forward Power Dissipation (W) 50 40 30 20 10 0 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0 4 8 12 16 20 24 10 Average Forward Current (A) Fig. 3 - Forward Power Dissipation 30 40 50 60 70 80 90 100 Fig. 5 - Typical Reverse Characteristics Per Diode 1000 100 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 20 Percent of Rated Peak Reverse Voltage (%) 10 TJ = 125 °C 1 0.1 0.01 0.3 TJ = 25 °C 100 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Forward Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode Revision: 26-Jun-13 Document Number: 89298 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU2006-M3, BU2008-M3, BU2010-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) View A 0.020R (TYP.) 0.125 (3.2) x 45° Chamfer 0.080 (2.03) 0.060 (1.52) 0.310 (7.9) 0.290 (7.4) 0.160 (4.1) 0.140 (3.5) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R + 9° TYP. ~ ~ 0.085 (2.16) 0.065 (1.65) - 5° TYP. 0.048 (1.23) 0.039 (1.00) 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.040 (1.02) 0.100 (2.54) 0.085 (2.16) 0.190 (4.83) 0.210 (5.33) 0.028 (0.72) 0.020 (0.52) 0.080 (2.03) 0.065 (1.65) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) REF. 0.094 (2.39) x 45° REF. R 0.11 (2.78) REF. 0.64 (16.28) REF. 0.62 (15.78) REF. R 0.10 (2.60) REF. 0.055 (1.385) REF. Revision: 26-Jun-13 Document Number: 89298 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BU2006-M3, BU2008-M3, BU2010-M3 www.vishay.com Vishay General Semiconductor FORMING SPECIFICATION: BU-5S in inches (millimeters) 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) + 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R 0.080 (2.03) 0.060 (1.52) 9° TYP. 0.020R (TYP.) ~ ~ - 0.085 (2.16) 0.065 (1.65) 0.100 (2.54) 0.085 (2.16) 5° TYP. 0.219 (5.55) MAX. 0.315 (8.0) 0.276 (7.0) 0.134 (3.40) 0.087 (2.20) 0.080 (2.03) 0.065 (1.65) 0.319 (8.10) 0.272 (6.90) 0.319 (8.10) 0.272 (6.90) 0.028 (0.72) 0.020 (0.52) APPLICATION NOTE (1) Device UL approved for safety use dielectric strength of 1500 V. (2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. (3) Heat sink shape recommendation: (3) 2.5 mm MIN. Heatsink 2.5 mm MIN. By Safety Requirements Revision: 26-Jun-13 Document Number: 89298 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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