BU2506, BU2508, BU2510
www.vishay.com
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
FEATURES
• UL recognition file number E312394
• Thin single in-line package
• Glass passivated chip junction
+
~
~
-
~
~
+
isoCink+™
• Available for BU-5S lead forming option (part
number with “5S” suffix, e.g. BU25065S)
Available
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Case Style BU
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
+
~
~
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
-
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Package
BU
IF(AV)
25 A
VRRM
600 V, 800 V, 1000 V
IFSM
300 A
IR
5 μA
VF at IF = 12.5 A
0.87 V
TJ max.
150 °C
Circuit configuration
In-line
Case: BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
TC = 60 °C (1)
Average rectified forward current (Fig. 1, 2)
TA = 25 °C (2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C
Rating for fusing (t < 8.3 ms) TJ = 25 °C
Operating junction and storage temperature range
SYMBOL
BU2506
BU2508
BU2510
UNIT
VRRM
600
800
1000
V
25
IO
A
3.5
IFSM
300
A
I2t
373
A2s
TJ, TSTG
-55 to +150
°C
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage per diode (1)
IF = 12.5 A
Maximum reverse current per diode
rated VR
Typical junction capacitance per diode
4.0 V, 1 MHz
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
SYMBOL
VF
IR
CJ
TYP.
MAX.
0.97
1.05
0.87
0.95
-
5.0
120
350
125
-
UNIT
V
μA
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 29-Aug-17
Document Number: 84805
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU2506, BU2508, BU2510
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
BU2506
BU2508
RJC (1)
2.0
RJA (2)
20
BU2510
UNIT
°C/W
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
BU2506-E3/45
4.84
45
20
DELIVERY MODE
Tube
BU2506-E3/51
4.84
51
250
Paper tray
BU2506-M3/45
4.84
45
20
Tube
BU25065S-E3/45
4.84
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
50
With Heatsink
Sine-Wave, R-Load
Forward Power Dissipation (W)
Average Forward Output Current (A)
30
25
20
15
TC
TC
10
5
TC Measured at Device Bottom
0
0
20
60
40
80
30
20
10
0
100
120
140
160
0
5
10
15
20
25
30
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Forward Power Dissipation
100
Instantaneous Forward Current ( A )
5
Average Forward Rectified Current (A)
40
4
3
2
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
1
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0
25
50
75
100
125
150
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
Ambient Temperature (°C)
Instantaneous Forward Voltage ( V )
Fig. 2 - Forward Current Derating Curve
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 29-Aug-17
Document Number: 84805
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU2506, BU2508, BU2510
www.vishay.com
Vishay General Semiconductor
1000
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Reverse Current (µA)
1000
100
TJ = 125 °C
10
1
TJ = 25 °C
100
10
0.1
10
20
30
40
50
60
70
80
90
1
0.1
100
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type BU
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
View A
0.020R (TYP.)
0.125 (3.2) x 45°
Chamfer
0.080 (2.03)
0.060 (1.52)
0.310 (7.9)
0.290 (7.4)
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
+
9°
TYP.
~
~
0.085 (2.16)
0.065 (1.65)
-
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.190 (4.83)
0.210 (5.33)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.094 (2.39) x 45° REF.
R 0.11
(2.78) REF.
0.64 (16.28) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 29-Aug-17
Document Number: 84805
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BU2506, BU2508, BU2510
www.vishay.com
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.080 (2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R
+
9°
TYP.
0.020R (TYP.)
0.085 (2.16)
0.065 (1.65)
~
~
-
0.100 (2.54)
0.085 (2.16)
5°
TYP.
0.219 (5.55)
MAX.
0.315 (8.0)
0.276 (7.0)
0.134 (3.40)
0.087 (2.20)
0.080 (2.03)
0.065 (1.65)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.028 (0.72)
0.020 (0.52)
APPLICATION NOTE
1. Device UL approved for safety use dielectric strength of 1500 V
2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
3. Heat sink shape recommendation:
(3)
2.5 mm MIN.
Heatsink
2.5 mm MIN.
By Safety Requirements
Revision: 29-Aug-17
Document Number: 84805
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000
