BY203-20STR

BY203-12S, BY203-16S, BY203-20S www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 949539 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-57 sintered glass case Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg • Fast rectification and switching avalanche sinterglass diode for TV-line output circuits an switch mode power supply               ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS BY203-20S BY203-20STR 5000 per 10" tape and reel MINIMUM ORDER QUANTITY 25 000 BY203-20S BY203-20STAP 5000 per ammopack 25 000 TYPE DIFFERENTIATION PACKAGE BY203-12S VR = 1200 V; IF(AV) = 250 mA SOD-57 BY203-16S VR = 1600 V; IF(AV) = 250 mA SOD-57 BY203-20S VR = 2000 V; IF(AV) = 250 mA SOD-57 PARTS TABLE PART ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER PART SYMBOL VALUE UNIT BY203-12S VR = VRRM 1200 V BY203-16S VR = VRRM 1600 V BY203-20S VR = VRRM 2000 V IFSM 20 A IF(AV) 0.25 A ER 10 mJ Junction temperature range Tj -55 to +150 °C Storage temperature range Tstg -55 to +175 °C Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION lR = 100 μA tp = 10 ms, half sine wave Average forward current Non repetitive reverse avalanche energy I(BR)R = 0.4 A Rev. 1.9, 20-Feb-18 Document Number: 86002 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BY203-12S, BY203-16S, BY203-20S www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE Lead length l = 10 mm, TL = constant RthJA 45 UNIT K/W Maximum lead length RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. VF - - 2.4 V IF = 0.2 A, tp/T = 0.01, tp = 0.3ms Forward voltage Reverse current Breakdown voltage VR = 700 V BY203-12S IR - - 2 μA VR = 1000 V BY203-16S IR - - 2 μA VR = 1200 V BY203-20S IR - - 2 μA BY203-12S V(BR) 1200 - - V BY203-16S V(BR) 1600 - - V BY203-20S V(BR) 2000 - - V trr - - 300 ns lR = 100 μA, tp/T = 0.01, tp = 0.3 ms IF = 0.5 A, IR = 1 A, iR = 0.25 A Reverse recovery time UNIT TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 0.30 200 160 120 VRRM VR BY203/12 80 40 BY203/16 BY203/20 IFAV - Average Forward Current (A) Tj - Junction Temperature (°C) 240 RthJA = 45 K/W I = 10 mm 0.25 0.20 0.10 VR = VRRM half sinewave 0.05 0 0 0 949080 RthJA = 100 K/W PCB: d = 25 mm 0.15 400 800 1200 1600 VR, VRRM - Rev./Rep. Peak Rev. Voltage (V) 0 30 60 90 120 150 Tamb - Ambient Temperature (°C) 16398 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 1 - Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage 10 1000 IR - Reverse Current (μA) IF - Forward Current (A) VR = VRRM 1 Tj = 175 °C 0.1 Tj = 25 °C 0.01 100 10 1 25 0.001 0 16397 1 2 3 4 5.0 VF - Forward Voltage (V) Fig. 2 - Max. Forward Current vs. Forward Voltage 16399 50 75 100 125 150 Tj - Junction Temperature (°C) Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.9, 20-Feb-18 Document Number: 86002 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BY203-12S, BY203-16S, BY203-20S Vishay Semiconductors 18 500 VR = VRRM CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) www.vishay.com 400 PR-Limit at 100 % VR 300 PR-Limit at 80 % VR 200 100 14 12 10 8 6 4 2 0 0.1 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 16400 16401 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature f = 1 MHz 16 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.9, 20-Feb-18 Document Number: 86002 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOD-57 BYT62-BY203 3.4 max. [0.134] 0.82 max. [0.032] PACKAGE DIMENSIONS in millimeters (inches) 26 min. [1.024] 4.2 max. [0.165] 26 min. [1.024] 23194 Rev. 3 - Date: 09.February.2005 Document no.:6.563-5006.5-4 Rev. 1.2, 25-Apr-2022 Document Number: 84045 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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