BY448 , BY458
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High voltage rectification
• Efficiency diode in horizontal deflection circuits
949539
DESIGN SUPPORT TOOLS
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Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BY458
BY458TR
5000 per 10" tape and reel
25 000
BY458
BY458TAP
5000 per ammopack
25 000
PART
TYPE DIFFERENTIATION
PACKAGE
BY448
VR = 1500 V, IFAV = 2 A
SOD-57
BY458
VR = 1200 V, IFAV = 2 A
SOD-57
PARTS TABLE
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
TEST CONDITION
See electrical characteristics
PART
SYMBOL
VALUE
UNIT
BY448
VR = VRRM
1500
V
BY458
VR = VRRM
1200
V
IFSM
30
A
tp = 10 ms, half sine wave
Average forward current
Junction temperature
Storage temperature range
Non repetitive reverse avalanche energy
l(BR)R = 0.4 A
IFAV
2
A
Tj
140
°C
Tstg
-55 to +175
°C
ER
10
mJ
UNIT
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
Rev. 1.8, 20-Feb-18
Document Number: 86006
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BY448 , BY458
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
UNIT
IF = 3 A
VF
-
-
1.6
V
VR = VRRM
IR
-
-
3
μA
VR = VRRM, Tj = 140 °C
IR
-
-
140
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
2
μs
IF = 1 A, - dIF/dt = 0.05 A/μs
trr
-
-
20
μs
Forward voltage
Reverse current
Reverse recovery time
Total reverse recovery time
2.5
120
l
l
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
100
80
TL = constant
60
40
20
VR = VRRM
2.0
l = 10 mm
1.5
1.0
PCB: d = 25 mm
0
0
5
10
15
20
25
0
30
16418
l - Lead Length (mm)
949101
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100
VR = VRRM
IR - Reverse Current (μA)
Tj = 150 °C
10
IF - Forward Current (A)
RthJA = 100 K/W
0.5
0
1
Tj = 25 °C
0.1
0.01
100
10
0.001
1
0
16417
half sine wave
RthJA = 45 K/W
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
5
16419
25
50
75
100
125
150
Tj - Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.8, 20-Feb-18
Document Number: 86006
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BY448 , BY458
Vishay Semiconductors
400
35
VR = VRRM
f = 1 MHz
350
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
www.vishay.com
300
PR - Limit at 100 % VR
250
200
PR - Limit at 80 % VR
150
100
50
0
30
25
20
15
10
5
0
25
50
75
100
125
150
0.1
16421
Tj - Junction Temperature (°C)
16420
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 20-Feb-18
Document Number: 86006
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000