BYG10J-E3/TR

BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated pellet chip junction • Low reverse current • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) Cathode • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS AVAILABLE 3D 3D TYPICAL APPLICATIONS 3D Models For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 1.5 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V, 1600 V IFSM 30 A IR 1.0 μA VF 1.15 V ER 20 mJ TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 600 800 1000 1600 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M) I(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y) ER 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +150 °C V Revision:21-Feb-2020 Document Number: 88957 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 1 A IF = 1.5 A SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT 1.1 TJ = 25 °C TJ = 25 °C Maximum DC reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 100 °C VF V 1.15 1 IR μA 10 4 trr μs Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to lead Typical thermal resistance, junction to ambient BYG10D BYG10G BYG10J BYG10K RθJL 25 RθJA (1) 150 RθJA (2) 125 (3) 100 RθJA BYG10M BYG10Y UNIT °C/W °C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG10M-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG10M-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG10MHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel PREFERRED P/N BYG10MHE3_A/I (1) BYG10M-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG10M-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG10MHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel BYG10MHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision:21-Feb-2020 Document Number: 88957 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title TJ = 150 °C 1000 1 TJ = 25 °C 0.1 100 TJ = -40 °C 0.01 0.001 Reverse Power Dissipation (mW) 10 1st line 2nd line 2nd line Instantaneous Forward Current (A) 400 10000 100 PR - Limit at 100 % VR 300 250 200 150 PR - Limit at 80 % VR 100 50 10 0 0.5 1.0 1.5 2.0 2.5 0 3.0 25 Instantaneous Forward Voltage (V) 50 75 100 125 150 Junction Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature 30 1.6 1.4 f = 1 MHz VR = VRRM Half Sine-Wave RθJL ≤ 25 K/W 1.2 25 Diode Capacitance (pF) Average Forward Current (A) VR = VRRM 350 1.0 0.8 0.6 0.4 RθJA ≤ 125 K/W RθJA ≤ 150 K/W 0.2 20 15 10 5 0 0 0 20 40 60 80 100 120 140 0.1 160 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 5000 1000 TA = 125 °C Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 100 10 4000 TA = 100 °C 3000 TA = 75 °C TA = 50 °C 2000 TA = 25 °C 1000 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Reverse Recovery Time vs. Forward Current Revision:21-Feb-2020 Document Number: 88957 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor Reverse Recovery Charge (nC) 2000 TA = 125 °C 1600 TA = 100 °C 1200 TA = 75 °C TA = 50 °C 800 TA = 25 °C 400 IR = 0.5 A, iR = 0.125 A 0 0 0.2 0.4 0.6 0.8 1.0 Forward Current (A) Fig. 7 - Reverse Recovery Charge vs. Forward Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision:21-Feb-2020 Document Number: 88957 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Jan-2024