BYG10YHM3_A/H

BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated pellet chip junction Available • Low reverse current • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS IF(AV) 1.5 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V, 1600 V IFSM 30 A IR 1.0 μA VF 1.15 V ER 20 mJ For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MECHANICAL DATA TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade  Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade  Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y 200 400 600 800 1000 1600 UNIT V Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M) I(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y) ER 20 mJ Operating junction and storage temperature range TJ, TSTG -55 to +150 °C Revision: 15-May-2018 Document Number: 88957 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 1 A IF = 1.5 A SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT 1.1 TJ = 25 °C TJ = 25 °C Maximum DC reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 100 °C VF V 1.15 1 IR μA 10 4 trr μs Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to lead Typical thermal resistance, junction to ambient BYG10D BYG10G BYG10J BYG10K RJL 25 RJA (1) 150 RJA (2) 125 (3) 100 RJA BYG10M BYG10Y UNIT °C/W °C/W Notes (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG10M-E3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG10M-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG10MHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel PREFERRED P/N BYG10MHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel BYG10M-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG10M-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG10MHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel BYG10MHM3_A/I (1) Note (1) AEC-Q101 qualified Revision: 15-May-2018 Document Number: 88957 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 400 Reverse Power Dissipation (mW) 100 Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 PR - Limit at 100 % VR 300 250 200 150 PR - Limit at 80 % VR 100 50 0 0 0.5 1.0 1.5 2.0 2.5 25 3.0 50 75 100 125 150 Forward Voltage (V) Junction Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature 30 1.6 1.4 f = 1 MHz VR = VRRM Half Sine-Wave RθJA ≤ 25 K/W 1.2 25 Diode Capacitance (pF) Average Forward Current (A) VR = VRRM 350 1.0 0.8 0.6 0.4 RθJA ≤ 125 K/W RθJA ≤ 150 K/W 0.2 20 15 10 5 0 0 0 20 40 60 80 100 120 140 0.1 160 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 1000 5000 TA = 125 °C Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 100 10 4000 TA = 100 °C 3000 TA = 75 °C TA = 50 °C 2000 TA = 25 °C 1000 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Reverse Recovery Time vs. Forward Current Revision: 15-May-2018 Document Number: 88957 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor Reverse Recovery Charge (nC) 2000 TA = 125 °C 1600 TA = 100 °C 1200 TA = 75 °C TA = 50 °C 800 TA = 25 °C 400 IR = 0.5 A, iR = 0.125 A 0 0 0.2 0.4 0.6 0.8 1.0 Forward Current (A) Fig. 7 - Reverse Recovery Charge vs. Forward Current                  PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 15-May-2018 Document Number: 88957 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000