BYG21KHE3/TR

BYG21K, BYG21M www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) Cathode • AEC-Q101 qualified available - Automotive ordering code P/NHE3 or P/NHM3 Anode ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D TYPICAL APPLICATIONS 3D Models For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 800 V, 1000 V IFSM 30 A IR 1.0 μA VF 1.6 V trr 120 ns ER 20 mJ TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHE3_X - RoHS-compliant, and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG21K BYG21M BYG21K BYG21M UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A ER 20 mJ TJ, TSTG -55 to +150 °C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range 800 1000 V Revision: 21-Feb-2020 Document Number: 88961 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG21K, BYG21M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 1 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A SYMBOL BYG21M TJ = 25 °C V 1.6 1 IR TJ = 100 °C UNIT 1.5 VF (1) TJ = 25 °C IF = 1.5 A BYG21K μA 10 120 trr ns Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to lead, TL = const. BYG21K BYG21M RθJL (1) 150 RθJA (2) 125 RθJA (3) 100 RθJA Typical thermal resistance, junction to ambient UNIT 25 °C/W °C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 TR 1800 7" diameter plastic tape and reel BYG21K-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG21KHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel BYG21KHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel BYG21K-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG21K-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG21KHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel BYG21KHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel BYG21K-E3/TR Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 1 1000 TJ = 25 °C 0.1 100 TJ = -40 °C 0.01 Average Forward Current (A) TJ = 150 °C 1st line 2nd line 2nd line Instantaneous Forward Current (A) 1.6 10000 10 RθJA = 25 K/W 1.4 VR = VRRM Half Sine-Wave 1.2 1.0 RθJA = 125 K/W 0.8 0.6 RθJA = 150 K/W 0.4 0.2 0.001 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous Forward Voltage (V) Fig. 1 - Forward Current vs. Forward Voltage 0.0 0 25 50 75 100 125 150 Ambient Temperature (°C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Revision: 21-Feb-2020 Document Number: 88961 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG21K, BYG21M www.vishay.com Vishay General Semiconductor 200 100 Reverse Recovery Charge (nC) Reverse Current (µA) VR = VRRM 10 TA = 125 °C 150 TA = 100 °C TA = 75 °C 100 TA = 50 °C TA = 25 °C 50 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Max. Reverse Recovery Charge vs. Forward Current Thermal Resistance for Pulse Cond. (K/W) Forward Current (A) 120 Reverse Power Dissipation (mW) 0 Junction Temperature (°C) VR = VRRM 100 PR - Limit at 100 % VR 80 60 PR - Limit at 80 % VR 40 20 0 25 50 75 100 125 150 1000 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Junction Temperature (°C) Pulse Length (s) Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 7 - Thermal Response 101 102 25 Diode Capacitance (pF) f = 1 MHz 20 15 10 5 0 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Revision: 21-Feb-2020 Document Number: 88961 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG21K, BYG21M www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Feb-2020 Document Number: 88961 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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