BYG22DHE3_A/H

BYG22A, BYG22B, BYG22D www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Low forward voltage • Soft recovery characteristic • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V, 100 V, 200 V IFSM 35 A IR 1.0 μA VF at IF 1.1 V trr 25 ns ER 20 mJ TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. MECHANICAL DATA TJ max. 150 °C Package SMA (DO-214AC) Diode variations Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,...) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meet JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG22A BYG22B BYG22D BYG22A BYG22B BYG22D 50 100 200 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 35 A ER 20 mJ TJ, TSTG -55 to +150 °C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range V Revision: 17-Aug-17 Document Number: 88959 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A, BYG22B, BYG22D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A SYMBOL Maximum instantaneous forward voltage IF = 2.0 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 25 °C TJ = 25 °C TJ = 100 °C BYG22A BYG22B BYG22D 1.0 VF (1) V 1.1 1 IR µA 10 trr UNIT 25 ns Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance, junction to lead, TL = const. BYG22B 25 RJA (1) 150 (2) 125 RJA (3) 100 RJA Maximum thermal resistance, junction to ambient BYG22A RJL BYG22D UNIT °C/W °C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 TR 1800 7" diameter plastic tape and reel BYG22D-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG22DHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel PREFERRED P/N BYG22D-E3/TR BYG22DHE3_A/I (1) BYG22D-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG22D-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel BYG22DHM3_A/H (1) BYG22DHM3_A/I (1) Note (1) AEC-Q101 qualified Revision: 17-Aug-17 Document Number: 88959 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A, BYG22B, BYG22D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 50 Reverse Power Dissipation (mW) Forward Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 30 PR - Limit at 100 % VR 20 PR - Limit at 80 % VR 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150 Forward Voltage (V) Junction Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature 70 2.5 f = 1 MHz VR = VRRM Half Sine-Wave 60 2.0 Diode Capacitance (pF) Average Forward Current (A) VR = VRRM 40 RθJA ≤ 25 K/W 1.5 RθJA ≤ 125 K/W 1.0 RθJA ≤ 150 K/W 0.5 50 40 30 20 10 0 0 0 20 40 60 80 100 120 140 160 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 140 100 TA = 125 °C Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 10 120 TA = 100 °C 100 TA = 75 °C 80 TA = 50 °C 60 40 TA = 25 °C 20 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Max. Reverse Recovery Time vs. Forward Current Revision: 17-Aug-17 Document Number: 88959 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A, BYG22B, BYG22D www.vishay.com Thermal Resistance for Pulse Cond. (K/W) Vishay General Semiconductor 60 Reverse Recovery Charge (nC) TA = 125 °C 50 TA = 100 °C 40 TA = 75 °C 30 TA = 50 °C 20 TA = 25 °C 10 IR = 0.5 A, iR = 0.125 A 0 0 0.2 0.4 0.6 0.8 1.0 1000 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Forward Current (A) Pulse Length (s) Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current Fig. 8 - Thermal Response 101 102 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 17-Aug-17 Document Number: 88959 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000