BYG23T-M3/TR

BYG23T-M3 www.vishay.com Vishay General Semiconductor High Voltage Ultrafast Avalanche SMD Rectifiers FEATURES • Glass passivated pellet chip junction • Low profile package • Ideal for automated placement • Low reverse current • High reverse voltage • Ultra fast reverse recovery time DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 1300 V IFSM 18 A trr 75 ns ER 5 mJ VF at IF = 1.0 A (TA = 125 °C) 1.39 V TJ max. 150 °C Package DO-214AC (SMA) Diode variations Single die  TYPICAL APPLICATIONS For use in high voltage, high frequency rectification specially suited for freewheeling, clamping, snubbering in power supply, ignition drive of HID, UHP and industrial ballast and snubber for PDP TV power supply application. • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes the cathode end        MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage BYG23T UNIT BYG23T VRRM 1300 V Maximum DC forward current (fig.1) IF (1) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 18 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 0.4 A, TL = 25 °C ER 5 mJ Maximum operating junction temperature TJ 150 °C TSTG -55 to +150 °C Storage temperature range Note • Free air, mounted on recommended copper pad area Revision: 19-Feb-15 Document Number: 89429 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TA = 25 °C Instantaneous forward voltage (1) IF = 1.0 A Reverse current (2) VR = 1300 V Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Forward recovery time Peak forward voltage IF = 1.5 A, dI/dt = 12 A/μs,  VF = 1.1 x VF max. Typical junction capacitance 4.0 V, 1 MHz VF TA = 125 °C TA = 25 °C TA = 25 °C TA = 25 °C MAX. 1.74 1.9 1.39 1.65 UNIT V - 5.0 2.9 50 trr 65 75 tfr 620 - VFP 9.0 - V CJ 9.0 - pF IR TA = 125 °C TYP. μA ns Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYG23T RJA 120 RJM 20 Typical thermal resistance (1) UNIT °C/W Note (1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R JA - junction to ambient, RJM - junction to mount. ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QANTITY DELIVERY MODE BYG23T-M3/TR PREFERRED P/N 0.064 TR 1800 7" diameter plastic tape and reel BYG23T-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel Revision: 19-Feb-15 Document Number: 89429 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Instantaneous Reverse Current (mA) 1.2 0.8 0.6 0.4 TM - Measured at the Lead terminal 0.2 0 0 25 50 75 100 150 TA = 150 °C TA = 125 °C 1 TA = 25 °C 0.1 0.01 175 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 100 D = 0.5 1.8 D = 0.8 D = 0.3 1.6 D = 0.2 1.4 D = 1.0 D = 0.1 1.2 1.0 0.8 T 0.6 0.4 0.2 D = tp/T 0 TJ = 25 °C f = 1.0 MHz Vstg = 50 mVp-p 10 tp 0 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 20 Instantaneous Forward Current (A) 10 TM - Mount Temperature (°C) 2.0 Average Power Loss (W) 125 Junction Capacitance (pF) DC Forward Current (A) 1.0 100 10 TA = 150 °C 1 TA = 125 °C TA = 25 °C 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 1000 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance  Revision: 19-Feb-15 Document Number: 89429 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG23T-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 19-Feb-15 Document Number: 89429 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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