BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
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Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
TO-220AB
FEATURES
ITO-220AB
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery times
• Soft recovery characteristics
2
• Low switching losses, high efficiency
3
1
1
BYQ28E, UG10
2
3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C for D2PAK (TO-263AB package)
BYQ28EF, UGF10
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
• High forward surge capability
PIN 2
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
D2PAK (TO-263AB)
• AEC-Q101 qualified available
K
- Automotive ordering code: base P/NHE3
(for ITO-220AB and D2PAK (TO-263AB package))
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
BYQ28EB, UGB10
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
HEATSINK
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
MECHANICAL DATA
3D Models
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,....)
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
100 V to 200 V
IFSM
55 A
trr
25 ns
VF
0.895 V
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
TJ max.
150 °C
Package
TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Circuit configuration
Common cathode
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG10BCT
UG10CCT
UG10DCT
BYQ28E-100 BYQ28E-150 BYQ28E-200
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
Working peak reverse voltage
VRWM
100
150
200
V
Maximum DC blocking voltage
VDC
100
150
200
V
Maximum average forward rectified current at TC = 100 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
IFSM
55
A
Non-repetitive peak reverse current per diode at tp = 100 μs
IRSM
0.2
A
VC
8
kV
TJ, TSTG
-40 to +150
°C
VAC
1500
V
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 05-Jun-2019
Document Number: 88549
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
IF = 10 A
SYMBOL
VF (1)
1.10
TJ = 150 °C
V
0.895
TJ = 25 °C
Maximum reverse current per diode at
working peak reverse voltage
UNIT
1.25
TJ = 25 °C
IF = 5 A
VALUE
10
IR
TJ = 100 °C
μA
200
Maximum reverse recovery time per diode
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM
trr
25
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
20
ns
Maximum stored charge per diode
IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM
Qrr
9
nC
ns
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG10
UGF10
UGB10
BYQ28E
BYQ28EF
BYQ28EB
Typical thermal resistance per diode, junction to ambient
RJA
50
55
50
Typical thermal resistance per diode, junction to case
RJC
4.5
6.7
4.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
TO-220AB
BYQ28E-200-E3/45
1.80
45
50/tube
ITO-220AB
BYQ28EF-200-E3/45
1.95
45
50/tube
Tube
D2PAK (TO-263AB)
BYQ28EB-200-E3/45
1.77
45
50/tube
Tube
D2PAK (TO-263AB)
BYQ28EB-200-E3/81
1.77
81
800/reel
Tape and reel
ITO-220AB
BYQ28EF-200HE3_A/P (1)
1.95
P
50/tube
Tube
D2PAK (TO-263AB)
BYQ28EB-200HE3_A/P (1)
1.95
P
50/tube
Tube
D2PAK (TO-263AB)
BYQ28EB-200HE3_A/I (1)
1.95
I
800/reel
Tape and reel
Note
AEC-Q101 qualified, available in ITO-220AB and D2PAK (TO-263AB) package
(2)
Revision: 05-Jun-2019
Document Number: 88549
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
15
Instantaneous Reverse Current (μA)
1000
Average Forward Current (A)
Resistive or Inductive Load
10
5
TJ = 100 °C
100
10
1
TJ = 25 °C
0.1
0
50
0
150
100
0
40
60
80
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
Stored Charge/Reverse Recovery Time
(nC/ns)
TC = 105 °C
8.3 ms Single Half Sine-Wave
10
10
1
50
at 2 A, 20 A/μs
40
at 5 A, 50 A/μs
30
at 1 A, 100 A/μs
20
at 5 A, 50 A/μs
at 1 A, 100 A/μs
10
trr
Qrr
at 2 A, 20 A/μs
0
25
100
50
75
100
125
Junction Temperature (°C)
Number of Cycles at 60 Hz
Fig. 5 - Reverse Switching Characteristics Per Diode
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction Capacitance (pF)
Pulse Width = 300 μs
1 % Duty Cycle
TJ = 125 °C
TJ = 100 °C
1
0.1
0.01
0.2
100
Percent of Rated Peak Reverse Voltage (%)
1
Instantaneous Forward Current (A)
20
Case Temperature (°C)
100
Peak Forward Surge Current (A)
TJ = 125 °C
TJ = 25 °C
0.4
0.6
0.8
1.0
1.2
1.4
10
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 05-Jun-2019
Document Number: 88549
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSION in inches (millimeters)
TO-220AB
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.145 (3.68)
0.135 (3.43)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
PIN
1
2
3
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 05-Jun-2019
Document Number: 88549
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000