BYS12-90
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
DO-214AC (SMA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
1.5 A
VRRM
90 V
IFSM
40 A
VF at IF = 1.0 A
0.75 V
MECHANICAL DATA
TJ max.
150 °C
Case: DO-214AC (SMA)
Package
DO-214AC (SMA)
Diode variations
Single die
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
BYS12-90
UNIT
BYS 209
Maximum repetitive peak reverse voltage
VRRM
90
V
Maximum average forward rectified current
IF(AV)
1.5
A
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Junction and storage temperature range
8.3 ms
10 ms
IFSM
40
30
A
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
Revision: 23-Dec-14
Document Number: 88950
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYS12-90
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1.0 A
Maximum instantaneous forward voltage (1)
IF = 15 mA
Maximum DC reverse current (1)
SYMBOL
TJ = 25 °C
UNIT
750
VF
TJ = 25 °C
VRRM
BYS12-90
mV
360
100
μA
1
mA
SYMBOL
BYS12-90
UNIT
RJL
25
°C/W
RJA (1)
150
RJA (2)
125
RJA (3)
100
IR
TJ = 100 °C
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
°C/W
Notes
Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu
2 3
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYS12-90-E3/TR
0.064
TR
1800
7" diameter plastic tape and reel
BYS12-90-E3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
BYS12-90HE3/TR (1)
0.064
TR
1800
7" diameter plastic tape and reel
BYS12-90HE3/TR3 (1)
0.064
TR3
7500
13" diameter plastic tape and reel
BYS12-90HE3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
BYS12-90HE3_A/I (1)
0.064
I
7500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.6
TJ = 150 °C
Average Forward Current (A)
Instantaneous Forward Current (A)
10
TJ = 125 °C
1
TJ = 25 °C
VR = VRRM
Half Sine-Wave
1.4
1.2
1.0
0.8
RthJA ≤ K/W
0.6
0.4
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
120
140
160
Instantaneous Forward Voltage (V)
Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Revision: 23-Dec-14
Document Number: 88950
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYS12-90
www.vishay.com
Vishay General Semiconductor
2500
Average Forward Current (A)
2.0
Reverse Power Dissipation (mW)
2.2
VR = 0 V, Half Sine-Wave
1.8
1.6
1.4
RthJA = 25 K/W
1.2
100 K/W
1.0
0.8
0.6
125 K/W
0.4
150 K/W
0.2
0
VR = VRRM
2000
1500
PR - Limit
at 100 % VR
1000
500
0
0
40
80
120
160
25
200
50
75
100
125
150
Ambient Temperature (°C)
Junction Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
100 000
180
160
f = 1 MHz
Diode Capacitance (pF)
Reverse Current (µA)
VR = VRRM
10 000
1000
140
120
100
80
60
40
20
100
0
25
50
75
100
125
150
0.1
1
10
100
Junction Temperature (°C)
Reverse Voltage (V)
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 23-Dec-14
Document Number: 88950
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000