BYS12-90-M3/TR3

BYS12-90-M3 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability SMA (DO-214AC) Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. 3D Models PRIMARY CHARACTERISTICS IF(AV) 1.5 A MECHANICAL DATA VRRM 90 V IFSM 40 A Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade VF 0.75 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYS12-90 UNIT BYS209 Maximum repetitive peak reverse voltage VRRM 90 V Maximum average forward rectified current IF(AV) 1.5 A Peak forward surge current single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Junction and storage temperature range 40 8.3 ms 10 ms IFSM A 30 dV/dt 10 000 V/μs TJ, TSTG -55 to +150 °C Revision: 13-May-2020 Document Number: 89412 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYS12-90-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage Maximum DC reverse current IF = 1.0 A IF = 15 mA VRRM TJ = 25 °C SYMBOL BYS12-90 750 VF (1) TJ = 25 °C UNIT mV 360 100 μA 1 mA SYMBOL BYS12-90 UNIT RθJL 25 °C/W IR (1) TJ = 100 °C Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance, junction to lead (1) 150 RθJA (2) 125 RθJA (3) 100 RθJA Maximum thermal resistance, junction to ambient °C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYS12-90-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYS12-90-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel Revision: 13-May-2020 Document Number: 89412 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYS12-90-M3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title Axis Title 10 10000 1000 1 TJ = 125 °C 100 TJ = 25 °C TJ = -40 °C 0.1 10 0 0.2 0.4 0.6 0.8 1.0 10000 TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 0.001 TJ = 25 °C 100 0.0001 0.00001 TJ = -40 °C 0.000001 1.2 10 10 Instantaneous Forward Voltage (V) 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 1.6 2500 VR = VRRM Half Sine-Wave 1.4 1.2 1.0 0.8 RthJA ≤ K/W 0.6 0.4 0.2 Reverse Power Dissipation (mW) Average Forward Current (A) 1000 TJ = 100 °C 1st line 2nd line TJ = 150 °C 2nd line Instantaneous Reverse Current (mA) 2nd line Instantaneous Forward Current (A) 10 VR = VRRM 2000 1500 PR - Limit at 100 % VR 1000 500 0 0 0 20 40 60 80 100 120 140 25 160 50 75 100 125 150 Ambient Temperature (°C) Junction Temperature (°C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 2.2 180 160 VR = 0 V, Half Sine-Wave 1.8 Diode Capacitance (pF) Average Forward Current (A) 2.0 1.6 1.4 RthJL = 25 K/W 1.2 100 K/W 1.0 0.8 0.6 125 K/W 0.4 150 K/W 0.2 f = 1 MHz 140 120 100 80 60 40 20 0 0 0 40 80 120 160 200 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage Revision: 13-May-2020 Document Number: 89412 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYS12-90-M3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 13-May-2020 Document Number: 89412 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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