BYT51B-TAP

BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 949539 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg • Rectification diode             ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT51M BYT51M-TR 5000 per 10" tape and reel 25 000 BYT51M BYT51M-TAP 5000 per ammopack 25 000 TYPE DIFFERENTIATION PACKAGE VR = 50 V; IF(AV) = 1.5 A SOD-57 BYT51B VR = 100 V; IF(AV) = 1.5 A SOD-57 BYT51D VR = 200 V; IF(AV) = 1.5 A SOD-57 BYT51G VR = 400 V; IF(AV) = 1.5 A SOD-57 BYT51J VR = 600 V; IF(AV) = 1.5 A SOD-57 PARTS TABLE PART BYT51A BYT51K VR = 800 V; IF(AV) = 1.5 A SOD-57 BYT51M VR = 1000 V; IF(AV) = 1.5 A SOD-57 Rev. 2.0, 20-Feb-18 Document Number: 86028 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage  = repetitive peak reverse voltage PART SYMBOL VALUE UNIT BYT51A VR = VRRM 50 V BYT51B VR = VRRM 100 V BYT51D VR = VRRM 200 V BYT51G VR = VRRM 400 V BYT51J VR = VRRM 600 V BYT51K VR = VRRM 800 V BYT51M VR = VRRM 1000 V tp = 10 ms, half sine wave IFSM 50 A IFRM 9 A l = 10 mm IF(AV) 1.5 A On PC board IF(AV) 1 A Tj = Tstg -55 to +175 °C ER 20 mJ See electrical characteristics Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy l(BR)R = 1 A MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse recovery time TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 1 A VF - 0.95 1.1 V IF = 1 A, Tj = 175 °C VF - - 1 V VR = VRRM IR - - 1 μA VR = VRRM, Tj = 150 °C IR - - 100 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4 μs 10 120 l l 100 IF - Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 80 TL = constant 60 40 1 Tj = 175 °C 0.1 Tj = 25 °C 0.01 20 0.001 0 0 949101 5 10 15 20 25 0 30 l - Lead Length (mm) Fig. 1 - Typ. Thermal Resistance vs. Lead Length 16323 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 2.0, 20-Feb-18 Document Number: 86028 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M www.vishay.com Vishay Semiconductors RthJA = 45 K/W 1.4 PR - Reverse Power Dissipation (mW) IFAV - Average Forward Current (A) 1.6 l = 10 mm 1.2 1.0 0.8 0.6 RthJA = 100 K/W 0.4 PCB: d = 25 mm 0.2 0.0 0 20 40 60 80 100 120 140 160 180 350 VR = VRRM 300 250 PR - Limit at 100 % VR 200 150 PR - Limit at 80 % VR 100 50 0 25 Tamb - Ambient Temperature (°C) 16324 16326 100 125 150 175 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1000 45 CD - Diode Capacitance (pF) VR = VRRM IR - Reverse Current (μA) 75 Tj - Junction Temperature (°C) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 10 f = 1 MHz 40 35 30 25 20 15 10 1 5 0 25 16325 50 50 75 100 125 150 175 0.1 Tj - Junction Temperature (°C) 16327 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage Fig. 4 - Reverse Current vs. Junction Temperature 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 2.0, 20-Feb-18 Document Number: 86028 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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