BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
949539
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
• Rectification diode
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYT51M
BYT51M-TR
5000 per 10" tape and reel
25 000
BYT51M
BYT51M-TAP
5000 per ammopack
25 000
TYPE DIFFERENTIATION
PACKAGE
VR = 50 V; IF(AV) = 1.5 A
SOD-57
BYT51B
VR = 100 V; IF(AV) = 1.5 A
SOD-57
BYT51D
VR = 200 V; IF(AV) = 1.5 A
SOD-57
BYT51G
VR = 400 V; IF(AV) = 1.5 A
SOD-57
BYT51J
VR = 600 V; IF(AV) = 1.5 A
SOD-57
PARTS TABLE
PART
BYT51A
BYT51K
VR = 800 V; IF(AV) = 1.5 A
SOD-57
BYT51M
VR = 1000 V; IF(AV) = 1.5 A
SOD-57
Rev. 2.0, 20-Feb-18
Document Number: 86028
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
= repetitive peak reverse voltage
PART
SYMBOL
VALUE
UNIT
BYT51A
VR = VRRM
50
V
BYT51B
VR = VRRM
100
V
BYT51D
VR = VRRM
200
V
BYT51G
VR = VRRM
400
V
BYT51J
VR = VRRM
600
V
BYT51K
VR = VRRM
800
V
BYT51M
VR = VRRM
1000
V
tp = 10 ms, half sine wave
IFSM
50
A
IFRM
9
A
l = 10 mm
IF(AV)
1.5
A
On PC board
IF(AV)
1
A
Tj = Tstg
-55 to +175
°C
ER
20
mJ
See electrical characteristics
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
l(BR)R = 1 A
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 1 A
VF
-
0.95
1.1
V
IF = 1 A, Tj = 175 °C
VF
-
-
1
V
VR = VRRM
IR
-
-
1
μA
VR = VRRM, Tj = 150 °C
IR
-
-
100
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
4
μs
10
120
l
l
100
IF - Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
80
TL = constant
60
40
1
Tj = 175 °C
0.1
Tj = 25 °C
0.01
20
0.001
0
0
949101
5
10
15
20
25
0
30
l - Lead Length (mm)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
16323
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 2.0, 20-Feb-18
Document Number: 86028
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M
www.vishay.com
Vishay Semiconductors
RthJA = 45 K/W
1.4
PR - Reverse Power Dissipation (mW)
IFAV - Average Forward Current (A)
1.6
l = 10 mm
1.2
1.0
0.8
0.6
RthJA = 100 K/W
0.4
PCB: d = 25 mm
0.2
0.0
0
20
40
60
80 100 120 140 160 180
350
VR = VRRM
300
250
PR - Limit at 100 % VR
200
150
PR - Limit at 80 % VR
100
50
0
25
Tamb - Ambient Temperature (°C)
16324
16326
100
125
150
175
Fig. 5 - Max. Reverse Power Dissipation vs.
Junction Temperature
1000
45
CD - Diode Capacitance (pF)
VR = VRRM
IR - Reverse Current (μA)
75
Tj - Junction Temperature (°C)
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
100
10
f = 1 MHz
40
35
30
25
20
15
10
1
5
0
25
16325
50
50
75
100
125
150
175
0.1
Tj - Junction Temperature (°C)
16327
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 2.0, 20-Feb-18
Document Number: 86028
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000