BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949539
DESIGN SUPPORT TOOLS
APPLICATIONS
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Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
• Fast rectification and switching diode
ORDERING INFORMATION (Example)
DEVICE NAME
BYT52M
BYT52M
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYT52M-TR
BYT52M-TAP
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYT52A
VR = 50 V; IF(AV) = 1.4 A
SOD-57
BYT52B
VR = 100 V; IF(AV) = 1.4 A
SOD-57
BYT52D
VR = 200 V; IF(AV) = 1.4 A
SOD-57
BYT52G
VR = 400 V; IF(AV) = 1.4 A
SOD-57
BYT52J
VR = 600 V; IF(AV) = 1.4 A
SOD-57
BYT52K
VR = 800 V; IF(AV) = 1.4 A
SOD-57
BYT52M
VR = 1000 V; IF(AV) = 1.4 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
BYT52A
BYT52B
BYT52D
BYT52G
BYT52J
BYT52K
BYT52M
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IF(AV)
IF(AV)
ER
ER
ER
Tj = Tstg
50
100
200
400
600
800
1000
50
1.4
0.85
10
10
10
-55 to +175
V
V
V
V
V
V
V
A
A
A
mJ
mJ
mJ
°C
tp = 10 ms, half sine wave
l = 10 mm
On PC board
I(BR)R = 0.4 A
BYT52J
BYT52K
BYT52M
Rev. 1.8, 20-Feb-18
Document Number: 86029
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
RthJA
45
100
K/W
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 1 A
VF
-
-
1.3
V
VR = VRRM
IR
-
-
5
μA
VR = VRRM, Tj = 150 °C
IR
-
-
150
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
200
ns
Forward voltage
Reverse current
Reverse recovery time
PART
UNIT
120
1.6
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
100
80
60
l
l
40
20
TL = constant
VR = VRRM
half sinewave
1.4
1.2
RthJA = 45 K/W
I = 10 mm
1.0
0.8
0.6
RthJA = 100 K/W
PCB: d = 25 mm
0.4
0.2
0
0
0
5
10
15
20
25
30
l - Lead Length (mm)
949552
0
Fig. 1 - Max. Thermal Resistance vs. Lead Length
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16329
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
10
IR - Reverse Current (μA)
IF - Forward Current (A)
VR = VRRM
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
100
10
1
25
0.001
0
16328
0.5
1.0
1.5
2.0
2.5
3.0
VF - Forward Voltage (V)
Fig. 2 - Max. Forward Current vs. Forward Voltage
16330
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 20-Feb-18
Document Number: 86029
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
Vishay Semiconductors
40
500
f = 1 MHz
VR = VRRM
450
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
www.vishay.com
400
350
PR-Limit
at 100 % VR
300
250
200
150
PR-Limit
at 80 % VR
100
35
30
25
20
15
10
5
50
0
0.1
0
25
50
75
100
125
150
175
Tj - Junction Temperature (°C)
16331
16332
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 20-Feb-18
Document Number: 86029
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000