BYT53C-TAP

BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 949539 DESIGN SUPPORT TOOLS • Very fast rectification and switches • Switched mode power supplies click logo to get started Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg • High-frequency inverter circuits             ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT53G BYT53G-TR 5000 per 10" tape and reel 25 000 BYT53G BYT53G-TAP 5000 per ammopack 25 000 TYPE DIFFERENTIATION PACKAGE PARTS TABLE PART BYT53A VR = 50 V; IF(AV) = 1.9 A SOD-57 BYT53B VR = 100 V; IF(AV) = 1.9 A SOD-57 BYT53C VR = 150 V; IF(AV) = 1.9 A SOD-57 BYT53D VR = 200 V; IF(AV) = 1.9 A SOD-57 BYT53F VR = 300 V; IF(AV) = 1.9 A SOD-57 BYT53G VR = 400 V; IF(AV) = 1.9 A SOD-57 Rev. 2.0, 20-Feb-18 Document Number: 86030 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage See electrical characteristics Peak forward surge current Average forward current PART SYMBOL VALUE UNIT BYT53A BYT53B VR = VRRM 50 V VR = VRRM 100 V BYT53C VR = VRRM 150 V BYT53D VR = VRRM 200 V BYT53F VR = VRRM 300 V BYT53G VR = VRRM 400 V tp = 10 ms, half sine wave IFSM 50 A l = 10 mm, TL = 25 °C IF(AV) 1.9 A I(BR)R = 1 A ER 20 mJ Tj = Tstg -55 to +175 °C Non repetitive reverse avalanche energy Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage SYMBOL MIN. TYP. MAX. UNIT IF = 1 A VF - - 1.1 V IF = 1 A, Tj = 175 °C VF - - 0.9 V VR = VRRM IR - - 5 μA VR = VRRM, Tj = 150 °C IR - - 200 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 50 ns Reverse current Reverse recovery time PART 120 10 Tj = 175 °C 100 IF - Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 80 60 l l 40 20 TL = constant 949552 5 10 15 20 25 Tj = 25 °C 0.1 0.01 0.001 0 0 1 0 30 l - Lead Length (mm) Fig. 1 - Max. Thermal Resistance vs. Lead Length 16333 0.5 1 1.5 2 2.5 3 VF - Forward Voltage (V) Fig. 2 - Max. Forward Current vs. Forward Voltage Rev. 2.0, 20-Feb-18 Document Number: 86030 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G www.vishay.com Vishay Semiconductors PR - Reverse Power Dissipation (mW) IFAV - Average Forward Current (A) 2.0 VR = VRRM half sine wave 1.8 1.6 RthJA = 45 K/W l = 10 mm 1.4 1.2 1.0 0.8 0.6 RthJA = 100 K/W 0.4 PCB: d = 25 mm 0.2 0.0 0 20 40 60 180 160 PR - Limit at 100 % VR 140 120 100 80 PR - Limit at 80 % VR 60 40 20 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 16336 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 60 1000 f = 1 MHz CD - Diode Capacitance (pF) VR = VRRM IR - Reverse Current (μA) VR = VRRM 200 80 100 120 140 160 180 Tamb - Junction Temperature (°C) 16334 220 100 10 1 50 40 30 20 10 0 25 50 75 100 125 150 175 0.1 16337 Tj - Junction Temperature (°C) 16335 Fig. 4 - Max. Reverse Current vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 2.0, 20-Feb-18 Document Number: 86030 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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