BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
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Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
949539
DESIGN SUPPORT TOOLS
• Very fast rectification and switches
• Switched mode power supplies
click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
• High-frequency inverter circuits
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYT53G
BYT53G-TR
5000 per 10" tape and reel
25 000
BYT53G
BYT53G-TAP
5000 per ammopack
25 000
TYPE DIFFERENTIATION
PACKAGE
PARTS TABLE
PART
BYT53A
VR = 50 V; IF(AV) = 1.9 A
SOD-57
BYT53B
VR = 100 V; IF(AV) = 1.9 A
SOD-57
BYT53C
VR = 150 V; IF(AV) = 1.9 A
SOD-57
BYT53D
VR = 200 V; IF(AV) = 1.9 A
SOD-57
BYT53F
VR = 300 V; IF(AV) = 1.9 A
SOD-57
BYT53G
VR = 400 V; IF(AV) = 1.9 A
SOD-57
Rev. 2.0, 20-Feb-18
Document Number: 86030
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
Peak forward surge current
Average forward current
PART
SYMBOL
VALUE
UNIT
BYT53A
BYT53B
VR = VRRM
50
V
VR = VRRM
100
V
BYT53C
VR = VRRM
150
V
BYT53D
VR = VRRM
200
V
BYT53F
VR = VRRM
300
V
BYT53G
VR = VRRM
400
V
tp = 10 ms, half sine wave
IFSM
50
A
l = 10 mm, TL = 25 °C
IF(AV)
1.9
A
I(BR)R = 1 A
ER
20
mJ
Tj = Tstg
-55 to +175
°C
Non repetitive reverse avalanche energy
Junction and storage temperature range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 1 A
VF
-
-
1.1
V
IF = 1 A, Tj = 175 °C
VF
-
-
0.9
V
VR = VRRM
IR
-
-
5
μA
VR = VRRM, Tj = 150 °C
IR
-
-
200
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
50
ns
Reverse current
Reverse recovery time
PART
120
10
Tj = 175 °C
100
IF - Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
80
60
l
l
40
20
TL = constant
949552
5
10
15
20
25
Tj = 25 °C
0.1
0.01
0.001
0
0
1
0
30
l - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16333
0.5
1
1.5
2
2.5
3
VF - Forward Voltage (V)
Fig. 2 - Max. Forward Current vs. Forward Voltage
Rev. 2.0, 20-Feb-18
Document Number: 86030
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
www.vishay.com
Vishay Semiconductors
PR - Reverse Power Dissipation (mW)
IFAV - Average Forward Current (A)
2.0
VR = VRRM
half sine wave
1.8
1.6
RthJA = 45 K/W
l = 10 mm
1.4
1.2
1.0
0.8
0.6
RthJA = 100 K/W
0.4
PCB: d = 25 mm
0.2
0.0
0
20
40
60
180
160
PR - Limit
at 100 % VR
140
120
100
80
PR - Limit
at 80 % VR
60
40
20
0
25
50
75
100
125
150
175
Tj - Junction Temperature (°C)
16336
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
60
1000
f = 1 MHz
CD - Diode Capacitance (pF)
VR = VRRM
IR - Reverse Current (μA)
VR = VRRM
200
80 100 120 140 160 180
Tamb - Junction Temperature (°C)
16334
220
100
10
1
50
40
30
20
10
0
25
50
75
100
125
150
175
0.1
16337
Tj - Junction Temperature (°C)
16335
Fig. 4 - Max. Reverse Current vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 2.0, 20-Feb-18
Document Number: 86030
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000