BYT54M-TR

BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 949539 APPLICATIONS • Very fast rectification and switching diodes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg              ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT54M BYT54M-TR 5000 per 10" tape and reel 25 000 BYT54M BYT54M-TAP 5000 per ammopack 25 000 TYPE DIFFERENTIATION PACKAGE PARTS TABLE PART BYT54A VR = 50 V; IF(AV) = 1.25 A SOD-57 BYT54B VR = 100 V; IF(AV) = 1.25 A SOD-57 BYT54D VR = 200 V; IF(AV) = 1.25 A SOD-57 BYT54G VR = 400 V; IF(AV) = 1.25 A SOD-57 BYT54J VR = 600 V; IF(AV) = 1.25 A SOD-57 BYT54K VR = 800 V; IF(AV) = 1.25 A SOD-57 BYT54M VR = 1000 V; IF(AV) = 1.25 A SOD-57 Rev. 1.8, 20-Feb-18 Document Number: 86031 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage See electrical characteristics Peak forward surge current PART SYMBOL VALUE UNIT BYT54A VR = VRRM 50 V BYT54B VR = VRRM 100 V BYT54D VR = VRRM 200 V BYT54G VR = VRRM 400 V BYT54J VR = VRRM 600 V BYT54K VR = VRRM 800 V BYT54M VR = VRRM 1000 V tp = 10 ms, half sine wave IFSM 30 A l = 10 mm IF(AV) 1.25 A On PC board IF(AV) 0.75 A BYT54J ER 10 mJ BYT54K ER 10 mJ ER 10 mJ Tj = Tstg -55 to +175 °C Average forward current I(BR)R = 0.4 A Non repetitive reverse avalanche energy BYT54M Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 1 A VF - - 1.5 V VR = VRRM IR - - 5 μA VR = VRRM, Tj = 150 °C IR - - 150 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 100 ns Forward voltage Reverse current Reverse recovery time PART UNIT 10 120 Tj = 175 °C 100 IF - Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 80 60 l l 40 1 Tj = 25 °C 0.1 0.01 20 TL = constant 0 0.001 0 949552 5 10 15 20 25 0 30 l - Lead Length (mm) Fig. 1 - Max. Thermal Resistance vs. Lead Length 16338 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.8, 20-Feb-18 Document Number: 86031 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M www.vishay.com Vishay Semiconductors PR - Reverse Power Dissipation (mW) IFAV - Average Forward Current (A) 1.4 VR = VRRM half sinewave 1.2 1.0 RthJA = 45 K/W I = 10 mm 0.8 0.6 RthJA = 100 K/W PCB: d = 25 mm 0.4 0.2 0 0 20 40 60 VR = VRRM 400 350 300 PR-Limit at 100 % VR 250 200 150 PR-Limit at 80 % VR 100 50 0 25 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 16339 450 75 100 125 175 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 35 1000 VR = VRRM f = 1 MHz CD - Diode Capacitance (pF) IR - Reverse Current (μA) 150 Tj - Junction Temperature (°C) 16341 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 50 100 10 1 25 50 75 100 125 150 25 20 15 10 5 0 0.1 175 Tj - Junction Temperature (°C) 16340 30 16342 Fig. 4 - Max. Reverse Current vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 20-Feb-18 Document Number: 86031 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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