BYT77-TR

BYT77, BYT78 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Controlled avalanche characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 949588 DESIGN SUPPORT TOOLS APPLICATIONS click logo to get started Models Available MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg • Fast “soft recovery” rectification diode            ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT78 BYT78-TR 2500 per 10" tape and reel 12 500 BYT78 BYT78-TAP 2500 per ammopack 12 500 PART TYPE DIFFERENTIATION PACKAGE BYT77 VR = 800 V; IF(AV) = 3 A SOD-64 BYT78 VR = 1000 V; IF(AV) = 3 A SOD-64 PARTS TABLE ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION See electrical characteristics PART SYMBOL VALUE UNIT BYT77 VR = VRRM 800 V BYT78 VR = VRRM 1000 V tp = 10 ms, half sine wave IFSM 100 A Average forward current Tamb 45 °C IF(AV) 3 A Non repetitive reverse avalanche energy I(BR)R = 0.4 A ER 10 mJ Tj = Tstg -55 to +175 °C Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W Rev. 1.9, 21-Feb-18 Document Number: 86034 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT77, BYT78 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 3 A VF - 1 1.2 V VR = VRRM IR - 1 5 μA VR = VRRM, Tj = 150 °C IR - 60 150 μA IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 250 ns Forward voltage Reverse current Reverse recovery time PART UNIT 100 40 IF - Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W)  TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 30 20 l l 10 Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 TL = constant 0.001 0 0 5 10 15 20 25 0 30 1.0 1.5 2.0 2.5 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Fig. 1 - Max. Thermal Resistance vs. Lead Length 240 IFAV - Average Forward Current (A) 3.5 200 VRRM 160 VR 120 80 RthJA = 70 K/W 40 VR = VRRM half sinewave 3.0 RthJA = 25 K/W I = 10 mm 2.5 2.0 1.5 RthJA = 70 K/W PCB: d = 25 mm 1.0 0.5 0 0 0 949467 0.5 16370 l - Lead Length (mm) 949466 Tj - Junction Temperature (°C) 10 200 400 600 800 1000 VR, VRRM - Rev./Rep. Peak Rev. Voltage (V) Fig. 2 - Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage 0 16371 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) Fig. 4 - Max. Average Forward Current vs. Ambient Temperature Rev. 1.9, 21-Feb-18 Document Number: 86034 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYT77, BYT78 www.vishay.com Vishay Semiconductors PR - Reverse Power Dissipation (mW) 1000 IR - Reverse Current (μA) VR = VRRM 100 10 1 25 50 75 100 125 150 VR = VRRM 400 350 300 PR-Limit at 100 % VR 250 200 150 PR-Limit at 80 % VR 100 50 0 175 25 Tj - Junction Temperature (°C) 16372 450 16373 Fig. 5 - Reverse Current vs. Junction Temperature 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 6 - Max Reverse Power Dissipation vs. Junction Temperature CD - Diode Capacitance (pF) 90 f = 1 MHz 80 70 60 50 40 30 20 10 0 0.1 1 10 100 VR - Reverse Voltage (V) 16374 Fig. 7 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Rev. 1.9, 21-Feb-18 Document Number: 86034 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000