BYV12, BYV13, BYV14, BYV15, BYV16
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
949539
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
• Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYV16-TR
BYV16-TAP
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
PART
TYPE DIFFERENTIATION
PACKAGE
BYV12
BYV13
BYV14
BYV15
BYV16
VR = 100 V; IF(AV) = 1.5 A
VR = 400 V; IF(AV) = 1.5 A
VR = 600 V; IF(AV) = 1.5 A
VR = 800 V; IF(AV) = 1.5 A
VR = 1000 V; IF(AV) = 1.5 A
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
BYV16
BYV16
PARTS TABLE
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
BYV12
BYV13
BYV14
BYV15
BYV16
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)
ER
Tj = Tstg
100
400
600
800
1000
40
9
1.5
10
-55 to +175
V
V
V
V
V
A
A
A
mJ
°C
tp = 10 ms, half sine wave
= 180°
I(BR)R = 0.4 A
Rev. 1.8, 20-Feb-18
Document Number: 86039
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV12, BYV13, BYV14, BYV15, BYV16
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
RthJA
45
100
K/W
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 1 A
VF
-
-
1.5
V
VR = VRRM
IR
-
1
5
μA
μA
Forward voltage
Reverse current
Reverse recovery time
PART
UNIT
VR = VRRM, Tj = 150 °C
IR
-
60
150
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
300
ns
IF = 1 A, dI/dt = 5 A/μs
Qrr
-
-
200
nC
Reverse recovery charge
10
120
l
l
100
IF - Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
80
TL = constant
60
40
Tj = 25 °C
0.1
0.01
20
0
0.001
0
5
10
15
20
25
l - Lead Length (mm)
949101
0
30
1.0
1.5
2.0
2.5
3.0
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
1.6
RthJA = 100 K/W
200
VRRM
160
BYV12
VR
BYV14
120
BYV16
80
BYV13
BYV15
40
IFAV - Average Forward Current (A)
240
VR = VRRM
half sinewave
1.4
1.2
RthJA = 45 K/W
I = 10 mm
1.0
0.8
0.6
RthJA = 100 K/W
PCB: d = 25 mm
0.4
0.2
0
0
0
949517
0.5
16375
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Tj - Junction Temperature (°C)
Tj = 175 °C
1
200
400
600
800
1000
VR, VRRM - Rev./Rep. Peak Rev. Voltage (V)
Fig. 2 - Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
0
16376
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
Rev. 1.8, 20-Feb-18
Document Number: 86039
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV12, BYV13, BYV14, BYV15, BYV16
www.vishay.com
Vishay Semiconductors
PR - Reverse Power Dissipation (mW)
1000
IR - Reverse Current (μA)
VR = VRRM
100
10
1
25
16377
50
75
100
125
150
450
VR = VRRM
400
350
300
PR-Limit
at 100 % VR
250
200
150
PR-Limit
at 80 % VR
100
50
175
0
25
Tj - Junction Temperature (°C)
50
100
125
150
175
Tj - Junction Temperature (°C)
16378
Fig. 5 - Reverse Current vs. Junction Temperature
75
Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
40
CD - Diode Capacitance (pF)
f = 1 MHz
35
30
25
20
15
10
5
0
0.1
1
10
100
VR - Reverse Voltage (V)
16379
Zthp - Thermal Resist. for Pulse Cond. (K/W)
Fig. 7 - Diode Capacitance vs. Reverse Voltage
1000
VRRM = 1000 V
RthJA = 100 K/W
100
Tamb = 25 °C
tp/T = 0.5
45 °C
50 °C
0.2
10
0.1
100 °C
0.02
70 °C
Single pulse
0.01
1
10-5
949522
10-4
10-3
10-2
10-1
100
101
tp - Pulse Length (s)
100
101
IFRM - Repetitive Peak
Forward Current (A)
Fig. 8 - Thermal Response
Rev. 1.8, 20-Feb-18
Document Number: 86039
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV12, BYV13, BYV14, BYV15, BYV16
www.vishay.com
Vishay Semiconductors
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 20-Feb-18
Document Number: 86039
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000