BYV26EGP-E3/73

BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass passivated pellet chip junction ® SUPERECTIFIER • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-204AC (DO-15) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. IF(AV) 1.0 A VRRM 800 V, 1000 V IFSM 30 A trr 75 ns MECHANICAL DATA VF at IF 1.3 V TJ max. 175 °C Package DO-204AC (DO-15) Case: DO-204AC, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Diode variation Single die Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT Maximum repetitive peak reverse voltage VRRM 800 1000 V Maximum RMS voltage VRMS 560 700 V Maximum DC blocking voltage VDC 800 1000 V Maximum average forward rectified current 0.375" (9.5 mm) lead length (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Non repetitive peak reverse energy ERSM (1) 10 mJ Operating junction and storage temperature range TJ, TSTG -65 to +175 °C Note (1) Peak reverse energy measured at I = 400 mA, T = T max. on inductive load, t = 20 μs R J J Revision: 13-Jun-16 Document Number: 88554 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Minimum avalanche breakdown voltage 100 μA Maximum instantaneous forward voltage 1.0 A TJ = 25 °C TJ = 175 °C TA = 25 °C Maximum DC reverse current at rated DC blocking voltage TA = 165 °C SYMBOL BYV26DGP BYV26EGP UNIT VBR 900 1100 V 2.5 VF V 1.3 5.0 IR μA 150 Max. reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance BYV26DGP BYV26EGP RJA (1) 70 RJL (2) 16 UNIT °C/W Notes (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads (2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYV26EGP-E3/54 0.428 54 4000 13" diameter paper tape and reel BYV26EGP-E3/73 0.428 73 2000 Ammo pack packaging Revision: 13-Jun-16 Document Number: 88554 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) TL = Lead Temperature Resistive or Inductive Load Lead Mounted on Heatsinks 1.0 0.8 0.6 Mounted on P.C.B. 0.375" (9.5 mm) Lead Length on 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 0.4 0.2 TA = Ambient Temperature 100 Instantaneous Forward Current (A) Average Forward Rectified Current (A) 1.2 25 50 75 100 125 TJ = 125 °C 0.1 TJ = 25 °C 175 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Voltage Characteristics 100 D = 0.3 D = 0.5 1.4 D = 0.2 D = 1.0 1.2 D = 0.1 1.0 0.8 T 0.6 0.4 0.2 D = tp/T tp Instantaneous Reverse Leakage Current (μA) D = 0.8 1.6 0 TJ = 175 °C TJ = 165 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 Average Forward Current (A) Percent of Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Reverse Leakage Characteristics 100 100 TJ = TJ Max. 10 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) 1 Temperature (°C) 1.8 Average Power Loss (W) 150 TJ = 150 °C 0.01 0.2 0 0 TJ = 175 °C 10 10 1 1 10 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance 100 Revision: 13-Jun-16 Document Number: 88554 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV26DGP, BYV26EGP www.vishay.com Vishay General Semiconductor                  Transient Thermal Impedance (°C/W) 100 10 Mounted on P.C.B. 0.375" (9.5 mm) Lead Length on 0.47" x 0.47" (12 mm x 12 mm) Copper Pads 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 7 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Revision: 13-Jun-16 Document Number: 88554 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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