BYV29F-300-E3/45

BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor Ultrafast Rectifier TO-220AC FEATURES ITO-220AC • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency 2 2 BYV29, UG8 Series 1 1 BYV29F, UGF8 Series PIN 1 PIN 1 CASE PIN 2 PIN 2 D2PAK (TO-263AB) • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (D2PAK (TO-263AB package)) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • AEC-Q101 qualified available K - Automotive ordering code: base P/NHE3 (for ITO-220AC and D2PAK (TO-263AB package)) 2 1 BYV29B, UGB8 Series PIN 1 PIN 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K HEATSINK DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 300 V to 400 V IFSM 110 A trr 35 ns VF 1.03 V TJ max. 150 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configurations Single Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commerical grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYV29-300 BYV29-400 UG8FT UG8GT UNIT Maximum repetitive peak reverse voltage VRRM 300 400 V Maximum working reverse voltage VRWM 300 400 V Maximum RMS voltage VRMS 210 280 V Maximum DC blocking voltage VDC 300 Maximum average forward rectified current at TC = 100 °C IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 110 A TJ, TSTG -40 to +150 °C VAC 1500 V Operating junction and storage temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min 400 V Revision: 12-Jun-2019 Document Number: 88557 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 8 A IF = 20 A SYMBOL TJ = 25 °C BYV29-400, UG8GT UNIT 1.25 VF (1) TJ = 150 °C V 1.03 TJ = 25 °C 1.40 TC = 25 °C Maximum DC reverse current at VRRM BYV29-300, UG8FT 10 IR TC = 100 °C μA 350 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM trr 50 ns Maximum reverse recovery current IF = 10 A, dI/dt = 50 A/μs, VR = 30 V, TC = 100 °C IRM 5.5 A Maximum recovered stored charged IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM Qrr 55 nC Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case SYMBOL BYV29 UG8 BYV29F UGF8 BYV29B UGB8 UNIT RJC 2.5 5.5 2.5 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC BYV29-400-E3/45 1.80 45 50/tube Tube ITO-220AC BYV29F-400-E3/45 1.95 45 50/tube Tube D2PAK (TO-263AB) BYV29B-400-E3/45 1.77 45 50/tube Tube D2PAK (TO-263AB) BYV29B-400-E3/81 1.77 81 800/reel Tape and reel ITO-220AC BYV29F-400HE3_A/P (1) 1.95 P 50/tube Tube D2PAK (TO-263AB) BYV29B-400HE3_A/P (1) 1.77 P 50/tube Tube D2PAK (TO-263AB) BYV29B-400HE3_A/I (1) 1.77 I 800/reel Tape and reel Note (1) AEC-Q101 qualified, available in ITO-220AC and TO-263AB package Revision: 12-Jun-2019 Document Number: 88557 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 1000 Resistive or Inductive Load Instantaneous Reverse Leakage Current (μA) Average Forward Rectified Current (A) 12 10 8 6 4 2 0 TJ = 100 °C 100 10 TJ = 25 °C 1 0.1 0.01 0 25 50 75 100 125 150 175 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Charateristics Stored Charge/Reverse Recovery Time (nC/ns) 150 Peak Forward Surge Current (A) TJ = 125 °C TC = 100 °C 8.3 ms Single Half Sine-Wave 125 100 75 50 25 0 160 trr Qrr 140 dI/dt = 150 A/μs 120 dI/dt = 50 A/μs 100 dI/dt = 100 A/μs dI/dt = 20 A/μs 80 60 40 dI/dt = 100 A/μs 20 dI/dt = 20 A/μs dI/dt = 150 A/μs 0 1 10 100 25 50 75 100 125 Number of Cycles at 60 Hz Junction Temperature (°C) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Reverse Switching Characteristics Per Leg 100 TJ = 125 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 100 °C 1 TJ = 25 °C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance 100 Revision: 12-Jun-2019 Document Number: 88557 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AC TO-220AC 0.415 (10.54) MAX. 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) PIN 1 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.38) CASE 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 7° REF. 0.350 (8.89) 0.330 (8.38) 2 7° REF. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.022 (0.56) 0.014 (0.36) D2PAK (TO-263AB) 1 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 1.148 (29.16) 1.118 (28.40) 2 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 12-Jun-2019 Document Number: 88557 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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