BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Glass passivated pallet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
2
3
1
2
• High forward surge capability
3
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
1
BYV32 Series
BYVF32 Series
PIN 1
PIN 2
PIN 3
CASE
PIN 1
PIN 2
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
PIN 3
TO-263AB
K
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
TYPICAL APPLICATIONS
1
BYVB32 Series
PIN 1
PIN 2
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
18 A
VRRM
50 V to 200 V
IFSM
150 A
trr
25 ns
VF
0.85 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Common cathode
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYV32-50
BYV32-100
BYV32-150
BYV32-200
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
105
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward rectified current at TC = 125 °C
IF(AV)
18
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
A
TJ, TSTG
-65 to +150
°C
VAC
1500
V
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Revision: 20-Feb-15
Document Number: 88558
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage per diode
IF = 20 A
F
= 5.0 A
Maximum DC reverse current
per diode
at rated DC blocking voltage
SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT
TJ = 25 °C
1.15
VF (1)
TJ = 100 °C
TJ = 25 °C
V
0.85
10
IR
TJ = 100 °C
μA
600
Maximum reverse recovery time
per diode
IF = 1 A, VR = 30 V
dI/dt = 100 A/μs, Irr = 10 % IRM
trr
25
ns
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
45
pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYV
BYVF
BYVB
UNIT
RJC
1.6
5.0
1.6
°C/W
Typical thermal resistance from junction to case per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
BYV32-200-E3/45
1.85
45
50/tube
Tube
ITO-220AB
BYVF32-200-E3/45
1.97
45
50/tube
Tube
TO-263AB
BYVB32-200-E3/45
1.35
45
50/tube
Tube
TO-263AB
BYVB32-200-E3/81
1.35
81
800/reel
Tape and reel
TO-220AB
BYV32-200HE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
BYVF32-200HE3/45 (1)
1.97
45
50/tube
Tube
TO-263AB
BYVB32-200HE3/45
(1)
1.35
45
50/tube
Tube
TO-263AB
BYVB32-200HE3/81 (1)
1.35
81
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
Revision: 20-Feb-15
Document Number: 88558
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
18
Instantaneous Reverse Leakage
Current (μA)
Average Forward Rectified Current (A)
20
16
12
8
4
Resistive or Inductive Load
0
TC = 100 °C
10
1
TC = 25 °C
0.1
0
25
50
75
100
125
150
0
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
150
60
TJ = 150 °C
10 ms Single Half Sine-Wave
125
Junction Capacitance (pF)
Peak Forward Surge Current (A)
100
100
75
50
25
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
50
40
30
20
10
0
1
100
10
1
10
100
Number of Cycles at 50 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
TJ = 25 °C
1
0.1
Pulse Width = 300 μs
1 % Duty Cycle
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 20-Feb-15
Document Number: 88558
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.104 (2.65)
0.096 (2.45)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
3
0.245 (6.22)
MIN.
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
TO-263AB
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
K
2
0.624 (15.85)
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
K
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.022 (0.56)
0.014 (0.36)
0.190 (4.83)
0.160 (4.06)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.411 (10.45)
0.380 (9.65)
7° REF.
7° REF.
0.560 (14.22)
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.145 (3.68)
0.135 (3.43)
7° REF.
0.076 (1.93) REF.
45° REF.
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 20-Feb-15
Document Number: 88558
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
1
Document Number: 91000