BYW172D, BYW172F, BYW172G
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Low forward voltage drop
• High pulse current capability
949588
DESIGN SUPPORT TOOLS
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
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Models
APPLICATIONS
Available
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
• Fast rectification diode in SMPS
Weight: approx. 858 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYW172G
BYW172G-TR
2500 per 10" tape and reel
12 500
BYW172G
BYW172G-TAP
2500 per ammopack
12 500
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYW172D
VR = 200 V; IF(AV) = 3 A
SOD-64
BYW172F
VR = 300 V; IF(AV) = 3 A
SOD-64
BYW172G
VR = 400 V; IF(AV) = 3 A
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
TEST CONDITION
See electrical characteristics
PART
SYMBOL
VALUE
UNIT
BYW172D
VR = VRRM
200
V
BYW172F
VR = VRRM
300
V
BYW172G
VR = VRRM
400
V
IFSM
100
A
tp = 10 ms, half sine wave
Average forward current
Non repetitive reverse avalanche energy
I(BR)R = 1 A
Junction and storage temperature range
IF(AV)
3
A
ER
20
mJ
Tj = Tstg
-55 to +175
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
Rev. 1.4, 21-Feb-18
Document Number: 86096
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW172D, BYW172F, BYW172G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 3 A
VF
-
-
1.1
V
IF = 9 A
VF
-
-
1.5
V
VR = VRRM
IR
-
-
1
μA
VR = VRRM, Tj = 100 °C
IR
-
-
20
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
75
100
ns
Forward voltage
Reverse current
Reverse recovery time
PART
40
3.5
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
30
20
l
l
10
TL = constant
VR = VRRM
half sinewave
3.0
2.5
RthJA = 25 K/W
I = 10 mm
2.0
1.5
RthJA = 70 K/W
PCB: d = 25 mm
1.0
0.5
0
0
0
5
10
15
20
25
30
l - Lead Length (mm)
949466
0
Fig. 1 - Max. Thermal Resistance vs. Lead Length
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16388
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
100
10
IR - Reverse Current (μA)
IF - Forward Current (A)
VR = VRRM
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
100
10
1
25
0.001
0
16387
0.5
1.0
1.5
2.0
2.5
VF - Forward Voltage (V)
Fig. 2 - Max. Forward Current vs. Forward Voltage
16389
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.4, 21-Feb-18
Document Number: 86096
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW172D, BYW172F, BYW172G
Vishay Semiconductors
120
180
VR = VRRM
160
f = 1 MHz
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
www.vishay.com
140
120
PR-Limit
at 100 % VR
100
80
60
PR-Limit
at 80 % VR
40
20
80
60
40
20
0
0.1
0
25
16390
100
50
75
100
125
150
175
Tj - Junction Temperature (°C)
10
100
VR - Reverse Voltage (V)
16391
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Zthp - Thermal Resist. for Pulse Cond. (K/W)
1
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
VRRM = 600 V
RthJA = 70 K/W
100
Tamb = 25 °C
tp/T = 0.5
100 °C
0.2
10
45 °C
0.1
70 °C
0.05
0.02
0.01
1
10-4
10-3
10-2
949562
10-1
10-0
101
102
tp - Pulse Length (s)
100
101
102
IFRM - Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.4, 21-Feb-18
Document Number: 86096
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000