BYW178
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Very fast reverse recovery time
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949588
DESIGN SUPPORT TOOLS
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APPLICATIONS
Models
Available
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
• Ultrafast rectification diode for switching mode power
supplies
Mounting position: any
Weight: approx. 858 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYW178
BYW178-TR
2500 per 10" tape and reel
12 500
BYW178
BYW178-TAP
2500 per ammopack
12 500
TYPE DIFFERENTIATION
PACKAGE
VR = 800 V; IF(AV) = 3 A
SOD-64
PARTS TABLE
PART
BYW178
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
BYW178
VR = VRRM
800
V
tp = 10 ms, half sine wave
IFSM
80
Repetitive peak forward current
IFRM
15
Average forward current
IF(AV)
3
Tj = Tstg
-55 to +175
°C
ER
20
mJ
Junction and storage temperature range
Non repetitive reverse avalanche energy
I(BR)R = 1 A
A
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Junction lead
Lead length l = 10 mm, TL = constant
RthJL
25
K/W
Junction ambient
On PC board with spacing 37.5 mm
RthJA
70
K/W
Rev. 1.8, 21-Feb-18
Document Number: 86047
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW178
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 3 A
VF
-
-
1.9
V
VR = VRRM
IR
-
-
1
μA
Forward voltage
Reverse current
PART
UNIT
VR = VRRM, Tj = 100 °C
IR
-
-
20
μA
IF = 1 A, dIF/dt - 50 A/μs,
VBATT = 200 V
IRM
-
2.2
-
ns
Reverse recovery time (JEDEC)
IF = 0.5 A, IR = 1 A, iR = 0.25
trr
-
-
60
ns
Reverse recovery time
IF = 1 A, dIF/dt - 50 A/μs,
VBATT = 200 V, iR = 0.25 x IRM
trr
-
50
-
ns
Reverse recovery current
100.000
– Forward Current (A)
40
30
20
l
l
F
10
TL = constant
0
0
94 9570
5
10
15
20
25
30
I - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
T j = 25 °C
0.100
0.010
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16458
V F – Forward Voltage ( V )
Fig. 3 - Forward Current vs. Forward Voltage
3.5
5
dIF/dt = 50A/μs
4
3
2
1
0
0.1
94 9571
Tj = 175°C
1.000
IFAV –Average Forward Current( A )
I RM – Reverse Recovery Current (A )
10.000
I
RthJA - Therm.Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
1
10
I F – Forward Current ( A )
Fig. 2 - Typ. Reverse Recovery Current vs. Forward Voltage
3.0
VR = VRRM
half sinewave
2.5
RthJA ≤ 25 K/W
l = 10mm
2.0
1.5
1.0
RthJA ≤ 70 K/W
PCB: d = 25 mm
0.5
0.0
0
16459
20
40 60 80 100 120 140 160 180
Tamb – Ambient Temperature (°C )
Fig. 4 - Max. Average Forward Current vs. Junction Temperature
Rev. 1.8, 21-Feb-18
Document Number: 86047
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW178
www.vishay.com
Vishay Semiconductors
1000
90
CD – Diode Capacitance ( pF )
I R – Reverse Current (A )
V R = VRRM
100
10
f = 1 MHz
80
70
60
50
40
30
20
10
1
25
16460
0
0.1
50
75
100 125 150 175
Tj – Junction Temperature ( °C )
PR – Reverse Power Dissipation ( mW)
Fig. 5 - Reverse Current vs. Junction Temperature
100.0
Fig. 7 - Diode Capacitance vs. Reverse Voltage
400
V R = VRRM
350
300
PR–Limit
@100 % VR
250
200
150
PR–Limit
@ 80 % VR
100
50
0
25
16461
1.0
10.0
V R – Reverse Voltage ( V )
16462
50
75
100 125 150 175
Tj – Junction Temperature (°C )
Zthp - Thermal Resist. for Pulse Cond. (K/W)
Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
1000
VRRM = 600 V
RthJA = 70 K/W
100
Tamb = 25 °C
tp/T = 0.5
100 °C
0.2
10
45 °C
0.1
70 °C
0.05
0.02
0.01
1
10-4
949562
10-3
10-2
10-1
10-0
101
102
tp - Pulse Length (s)
100
101
102
IFRM - Repetitive Peak
Forward Current (A)
Fig. 8 - Thermal Response
Rev. 1.8, 21-Feb-18
Document Number: 86047
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW178
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.8, 21-Feb-18
Document Number: 86047
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000