BYW52, BYW53, BYW54, BYW55, BYW56
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949539
DESIGN SUPPORT TOOLS
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APPLICATIONS
• Rectification, general purpose
Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
BYW56
BYW56-TR
5000 per 10" tape and reel
MINIMUM ORDER QUANTITY
25 000
BYW56
BYW56-TAP
5000 per ammopack
25 000
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYW52
VR = 200 V; IF(AV) = 2 A
SOD-57
BYW53
VR = 400 V; IF(AV) = 2 A
SOD-57
BYW54
VR = 600 V; IF(AV) = 2 A
SOD-57
BYW55
VR = 800 V; IF(AV) = 2 A
SOD-57
BYW56
VR = 1000 V; IF(AV) = 2 A
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i2t-rating
Junction and storage temperature range
PART
SYMBOL
VALUE
UNIT
BYW52
VR = VRRM
200
V
BYW53
VR = VRRM
400
V
BYW54
VR = VRRM
600
V
BYW55
VR = VRRM
800
V
BYW56
VR = VRRM
1000
V
IFSM
50
A
IFRM
12
A
= 180 °
IF(AV)
2
A
tp = 20 μs half sine wave, Tj = 175 °C
PR
1000
W
l(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
i2t
8
A2s
Tj = Tstg
-55 to +175
°C
Rev. 1.9, 21-Feb-18
Document Number: 86049
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW52, BYW53, BYW54, BYW55, BYW56
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
45
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 1 A
VF
-
0.9
1
V
VR = VRRM
IR
-
0.1
1
μA
μA
Forward voltage
Reverse current
UNIT
VR = VRRM, Tj = 100 °C
IR
-
5
10
Breakdown voltage
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms
V(BR)
-
-
1600
V
Diode capacitance
VR = 4 V, f = 1 MHz
CD
-
18
-
pF
ns
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
4000
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
trr
-
-
4000
ns
lF = 1 A, dI/dt = 5 A/μs
Qrr
-
-
200
nC
Reverse recovery charge
2.5
120
l
l
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
100
80
TL = constant
60
40
20
2.0
0
5
10
15
20
25
1.0
RthJA = 100 K/W
0.5
PCB: d = 25 mm
0
30
l - Lead Length (mm)
949101
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16351
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
1000
10
IR - Reverse Current (μA)
Tj = 175 °C
IF - Forward Current (A)
RthJA = 45 K/W
l = 10 mm
1.5
0.0
0
1
Tj = 25 °C
0.1
0.01
VR = VRRM
100
10
1
0.001
0.0
16350
VR = VRRM
half sine wave
0.4
0.8
1.2
25
1.6
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
16352
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.9, 21-Feb-18
Document Number: 86049
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW52, BYW53, BYW54, BYW55, BYW56
Vishay Semiconductors
40
400
VR = VRRM
350
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
www.vishay.com
300
PR - Limit at 100 % VR
250
200
150
PR - Limit at 80 % VR
100
50
30
25
20
15
10
0
5
0
25
16353
f = 1 MHz
35
50
75
100
125
150
0.1
175
16354
Tj - Junction Temperature (°C)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
Zthp - Thermal Resistance
for Pulse Cond. (K/W)
VRRM = 1000 V, RthJA = 100 K/W
100
tp/T = 0.5
Tamb = 25 °C
tp/T = 0.2
Tamb = 45 °C
tp/T = 0.1
10
Tamb = 60 °C
tp/T = 0.05
1
tp/T = 0.02
Tamb = 70 °C
tp/T = 0.01
Tamb = 100 °C
10-5
10-4
10-3
10-2
10-1
100
101
tp - Pulse Length (s)
94 9178
1
10
100
IFRM - Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.9, 21-Feb-18
Document Number: 86049
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000