BYW82, BYW83, BYW84, BYW85, BYW86
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Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
949588
DESIGN SUPPORT TOOLS
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• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Models
Available
APPLCIATIONS
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
• Rectification, general purpose
ORDERING INFORMATION (Example)
DEVICE NAME
BYW82 or BYW83 or BYW84 and BYW86
BYW82 or BYW84 and BYW85
BYW85
BYW83 or BYW86
ORDERING CODE
TAPED UNITS
BYW86-TR
2500 per 10" tape and reel
MINIMUM ORDER QUANTITY
12 500
BYW85-TAP
2500 per ammopack
12 500
BYW85TR
2500 per 10" tape and reel
12 500
BYW86TAP
2500 per ammopack
12 500
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYW82
VR = 200 V, IF(AV) = 3 A
SOD-64
BYW83
VR = 400 V, IF(AV) = 3 A
SOD-64
BYW84
VR = 600 V, IF(AV) = 3 A
SOD-64
BYW85
VR = 800 V, IF(AV) = 3 A
SOD-64
BYW86
VR = 1000 V, IF(AV) = 3 A
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i2t-rating
Junction and storage temperature range
PART
SYMBOL
VALUE
UNIT
BYW82
VR = VRRM
200
V
BYW83
VR = VRRM
400
V
BYW84
VR = VRRM
600
V
BYW85
VR = VRRM
800
V
BYW86
VR = VRRM
1000
V
IFSM
100
A
IFRM
18
A
IF(AV)
3
A
tp = 20 μs, half sine wave, Tj = 175 °C
PR
1000
W
I(BR)R = 1 A, Tj = 175 °C
ER
20
mJ
i2t
40
A2s
Tj = Tstg
-55 to +175
°C
Rev. 2.0, 22-Feb-18
Document Number: 86051
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 3 A
VF
-
-
1
V
VR = VRRM
IR
-
0.1
1
μA
μA
Forward voltage
Reverse current
UNIT
VR = VRRM, Tj = 100 °C
IR
-
5
10
Breakdown voltage
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms
V(BR)
-
-
1600
V
Diode capacitance
VR = 4 V, f = 1 MHz
CD
-
40
60
pF
μs
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
3.5
5
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
trr
-
4.5
7.5
μs
lF = 1 A, dI/dt = 5 A/μs
Qrr
-
8
12
μC
Reverse recovery charge
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
40
100
IF - Forward Current (A)
20
l
l
10
0
5
10
15
20
25
Tj = 25 °C
0.1
0.01
0.001
30
I - Lead Length (mm)
94 9563
Fig. 1 - Max. Thermal Resistance vs. Lead Length
IFAV - Average Forward Current (A)
Tj = 175 °C
1
TL = constant
0
3.5
VR = VRRM
half sinewave
RthJA = 25 K/W
I = 10 mm
3.0
2.5
2.0
1.5
1.0
RthJA = 70 K/W
0.5
PCB: d = 25 mm
0.0
0
16361
10
20 40
0
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
0.8
1.2
1.6
2.0
Fig. 3 - Forward Current vs. Forward Voltage
350
VR = VRRM
300
250
PR-Limit
at 100 % VR
200
150
PR-Limit
at 80 % VR
100
50
60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
0.4
VF - Forward Voltage (V)
16360
PR - Reverse Power Dissipation (mW)
RthJA - Therm. Resist.
Junction/Ambient (K/W)
30
0
25
16363
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Rev. 2.0, 22-Feb-18
Document Number: 86051
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYW82, BYW83, BYW84, BYW85, BYW86
www.vishay.com
Vishay Semiconductors
1000
100
CD - Diode Capacitance (pF)
IR - Reverse Current (µA)
VR = VRRM
100
10
f = 1 MHz
80
60
40
20
1
0
25
16362
50
75
100
125
150
175
0.1
16364
Tj - Junction Temperature (°C)
Zthp - Thermal Resistance for Pulse Cond. (K/W)
Fig. 5 - Reverse Current vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
V RRM = 1000 V
100
RthJA = 70 K/W
tp/T = 0.5
Tamb = 25°C
tp/T = 0.2
10
tp/T = 0.1
45 °C
tp/T = 0.05
tp/T = 0.01
tp/T = 0.02
1
10 -4
70°C
60 °C
100°C
10 -3
10 -2
10 -1
10 0
10 1
10 -1
tp - Pulse Length (s)
94 9568
10 0
10 1
IFRM - Repetitive Peak
Forward Current (A)
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 2.0, 22-Feb-18
Document Number: 86051
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000