BYX85TAP

BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 949539 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg • Rectification, general purpose              ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYX86 BYX86TR 5000 per 10" tape and reel 25 000 BYX86 BYX86TAP 5000 per ammopack 25 000 TYPE DIFFERENTIATION PACKAGE PARTS TABLE PART BYX82 VR = 200 V; IF(AV) = 2 A SOD-57 BYX83 VR = 400 V; IF(AV) = 2 A SOD-57 BYX84 VR = 600 V; IF(AV) = 2 A SOD-57 BYX85 VR = 800 V; IF(AV) = 2 A SOD-57 BYX86 VR = 1000 V; IF(AV) = 2 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION PART SYMBOL VALUE UNIT BYX82 VR = VRRM 200 V BYX83 VR = VRRM 400 V BYX84 VR = VRRM 600 V BYX85 VR = VRRM 800 V BYX86 VR = VRRM 1000 V tp = 10 ms, half sine wave IFSM 50 A IFRM 10 A Tamb  45 °C IF(AV) 2 A i2 t 8 A2s Tj = Tstg -55 to +175 °C See electrical characteristics Repetitive peak forward current Average forward current i2t-rating Junction and storage temperature range Rev. 1.7, 21-Feb-18 Document Number: 86052 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 1 A VF - 0.9 1 V VR = VRRM IR - 0.1 1 μA VR = VRRM, Tj = 100 °C IR - 10 25 μA VR = 4 V, f = 1 MHz CD - 20 - pF IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - 2000 4000 ns IF = IR = 1 A, dI/dt = 5 A/μs Qrr - 3 6 μC Forward voltage Reverse current Diode capacitance Reverse recovery time Reverse recovery charge UNIT 10 120 l l IF – Forward Current (A ) RthJA –Therm. Resist. Junction/ Ambient ( K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 80 TL= constant 60 40 Tj = 25°C 0.1 20 Scattering Limits 0.01 0 0 5 10 15 20 25 0 30 l – Lead Length ( mm ) Fig. 1 - Max. Thermal Resistance vs. Lead Length 94 9572 RthJA ≤ 35 K/W RthJA ≤ 100 K/W V RRM VR 120 40 0 94 9579 1.8 2.4 3.0 30 RthJA ≤ 57 K/W 160 80 1.2 Fig. 3 - Forward Current vs. Forward Voltage BYX 82 BYX 84 BYX 83 BYX 85 CD – Diode Capacitance ( pF ) 200 0.6 V F – Forward Voltage ( V ) 94 9573 240 Tj – Junction Temperature ( °C ) Tj = 175°C 1 24 18 12 6 BYX 86 1600 0 400 800 1200 Reverse / Repetitive Peak Reverse Voltage ( V ) Fig. 2 - Junction Temperature vs. Reverse / Repetitive Peak Reverse Voltage f = 1 MHz Tj = 25°C 0 0.1 94 9574 1 10 100 V R – Reverse Voltage ( V ) Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage Rev. 1.7, 21-Feb-18 Document Number: 86052 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYX82, BYX83, BYX84, BYX85, BYX86 Zthp–Thermal Resistance for PulseCond.(K/W) www.vishay.com Vishay Semiconductors 1000 V RRM ≤ 200 V RthJA ≤ 100 K/W 100 tp/T = 0.5 10 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 Tamb = 25°C Tamb =100 °C Tamb = 45 °C Tamb = 125 °C 0.02 Tamb = 70°C Tamb = 150 °C 0.01 Single Pulse 1 10–3 10–2 10–1 100 101 10 0 tp – Pulse Length ( s ) 94 9575 101 102 I FRM – Repetitive Peak Forward Current ( A ) Zthp– Thermal Resistance for PulseCond.(K/W) Fig. 5 - Thermal Response 1000 V RRM ≤ 1000 V t ≤ 10 μs RthJA ≤ 100 K/W 100 tp/T = 0.5 Tamb = 45°C tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 10 Tamb = 25°C Tamb = 60°C Tamb = 70°C 0.02 Tamb =100°C 0.01 1 10–3 Single Pulse 10–2 10–1 100 101 10–1 tp – Pulse Length ( s ) 94 9578 100 101 I FRM – Repetitive Peak Forward Current ( A ) Zthp– Thermal Resistance for Pulse Cond.(K/W) Fig. 6 - Thermal Response 1000 V RRM ≤ 200 V RthJA ≤ 57 K/W 100 94 9577 Tamb = 25°C tp/T = 0.5 10 1 10–4 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 tp/T = 0.01 10–3 Tamb = 70°C Tamb = 100°C Tamb = 125°C Tamb = 150°C Tamb = 45°C Single Pulse 10–2 10–1 100 tp – Pulse Length ( s ) 100 101 I FRM – Repetitive Peak Forward Current ( A ) Fig. 7 - Thermal Response Rev. 1.7, 21-Feb-18 Document Number: 86052 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYX82, BYX83, BYX84, BYX85, BYX86 Zthp–Thermal Resistance for Pulse Cond.(K/W) www.vishay.com Vishay Semiconductors 1000 V RRM ≤ 1000 V t ≤ 10 μs RthJA ≤ 57 K/W 100 tp/T = 0.5 10 Tamb = 25 °C tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 100°C Tamb = 45 °C 70°C tp/T = 0.02 tp/T = 0.01 1 10–4 10–3 Single Pulse 10–2 Tamb = 125°C 10–1 100 tp – Pulse Length ( s ) 94 9576 100 101 I FRM – Repetitive Peak Forward Current ( A ) Fig. 8 - Thermal Response 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.7, 21-Feb-18 Document Number: 86052 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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