BZD17C12P-E3-18

BZD17C3V6P to BZD17C200P Vishay Semiconductors Zener Diodes Features • • • • • Sillicon planar zener diodes Low profile surface-mount package Low leakage current Excellent stability High temperature soldering: 260 °C/10 s at terminals • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17249 Mechanical Data Case: JEDEC DO219AB Weight: approx. 15 mg (SMF®) plastic case Packaging codes/options: GS18/10K per 13" reel, (8 mm tape), 50K/box GS08/3K per 7" reel, (8 mm tape), 30K/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Non-repetitive peak pulse power dissipation Test condition Symbol Value Unit TL = 80 °C Ptot 2.3 W TA = 25 °C Ptot 0.8 1) W 100 µs square pulse 2) PZSM 300 W Symbol Value Unit RthJA 180 K/W RthJL 30 K/W Tj 150 °C Tstg - 55 to + 150 °C Notes: 1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick) 2) T = 25 °C prior to surge j Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air 1) Thermal resistance junction to lead Maximum junction temperature Storage temperature range Notes: 1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 81821 Rev. 1.0, 09-Jun-09 Test condition Symbol IF = 0.2 A VF Min. Typ. For technical support, please contact: Diodes-SSP@vishay.com Max. Unit 1.2 V www.vishay.com 1 BZD17C3V6P to BZD17C200P Vishay Semiconductors Electrical Characteristics TJ = 25 °C, unless otherwise specified Part number Working voltage 1) Differential resistance Temperature coefficient VZ at IZT rdif at IZ αZ at IZ IZT IR VR V Ω %/°C mA µA V Marking code min. max. typ. max. min. max. Test current Reverse leakage current max. BZD17C3V6P I0 3.4 3.8 4 8 - 0.14 - 0.04 100 100 BZD17C3V9P I1 3.7 4.1 4 8 - 0.14 - 0.04 100 50 1 1 BZD17C4V3P I2 4 4.6 4 7 - 0.12 - 0.02 100 25 1 BZD17C4V7P I3 4.4 5 3 7 - 0.1 0 100 10 1 BZD17C5V1P I4 4.8 5.4 3 6 - 0.08 0.02 100 5 1 BZD17C5V6P I5 5.2 6 2 4 - 0.04 0.04 100 10 2 BZD17C6V2P I6 5.8 6.6 2 3 - 0.01 0.06 100 5 2 BZD17C6V8P I7 6.4 7.2 1 3 0 0.07 100 10 3 BZD17C7V5P I8 7 7.9 1 2 0 0.07 100 50 3 BZD17C8V2P I9 7.7 8.7 1 2 0.03 0.08 100 10 3 BZD17C9V1P J0 8.5 9.6 2 4 0.03 0.08 50 10 5 BZD17C10P J1 9.4 10.6 2 4 0.05 0.09 50 7 7.5 BZD17C11P J2 10.4 11.6 4 7 0.05 0.1 50 4 8.2 BZD17C12P J3 11.4 12.7 4 7 0.05 0.1 50 3 9.1 BZD17C13P J4 12.4 14.1 5 10 0.05 0.1 50 2 10 BZD17C15P J5 13.8 15.6 5 10 0.05 0.1 50 1 11 BZD17C16P J6 15.3 17.1 6 15 0.06 0.11 25 1 12 BZD17C18P J7 16.8 19.1 6 15 0.06 0.11 25 1 13 BZD17C20P J8 18.8 21.2 6 15 0.06 0.11 25 1 15 BZD17C22P J9 20.8 23.3 6 15 0.06 0.11 25 1 16 BZD17C24P K0 22.8 25.6 7 15 0.06 0.11 25 1 18 BZD17C27P K1 25.1 28.9 7 15 0.06 0.11 25 1 20 BZD17C30P K2 28 32 8 15 0.06 0.11 25 1 22 BZD17C33P K3 31 35 8 15 0.06 0.11 25 1 24 BZD17C36P K4 34 38 21 40 0.06 0.11 10 1 27 BZD17C39P K5 37 41 21 40 0.06 0.11 10 1 30 BZD17C43P K6 40 46 24 45 0.07 0.12 10 1 33 BZD17C47P K7 44 50 24 45 0.07 0.12 10 1 36 BZD17C51P K8 48 54 25 60 0.07 0.12 10 1 39 BZD17C56P K9 52 60 25 60 0.07 0.12 10 1 43 BZD17C62P L0 58 66 25 80 0.08 0.13 10 1 47 BZD17C68P L1 64 72 25 80 0.08 0.13 10 1 51 BZD17C75P L2 70 79 30 100 0.08 0.13 10 1 56 BZD17C82P L3 77 87 30 100 0.08 0.13 10 1 62 BZD17C91P L4 85 96 60 200 0.08 0.13 5 1 68 BZD17C100P L5 94 106 60 200 0.09 0.13 5 1 75 BZD17C110P L6 104 116 80 250 0.09 0.13 5 1 82 BZD17C120P L7 114 127 80 250 0.09 0.13 5 1 91 BZD17C130P L8 124 141 110 300 0.09 0.13 5 1 100 BZD17C150P L9 138 156 130 300 0.09 0.13 5 1 110 BZD17C160P M0 153 171 150 350 0.09 0.13 5 1 120 BZD17C180P M1 168 191 180 400 0.09 0.13 5 1 130 BZD17C200P M2 188 212 200 500 0.09 0.13 5 1 150 Note: 1) Pulse test: t ≤ 5 ms p www.vishay.com 2 For technical support, please contact: Diodes-SSP@vishay.com Document Number 81821 Rev. 1.0, 09-Jun-09 BZD17C3V6P to BZD17C200P Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified IF - Forward Current (A) 10 Max. VF Typ. VF 1 0.1 0.6 0.8 17411 1.0 1.2 1.4 1.6 VF - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage CD - Typ. Junction Capacitance (pF) 10 000 C5V1P C6V8P C18P C12P 1000 100 C27P C51P C200P 10 0 0.5 17412 1.0 1.5 2.0 2.5 3.0 VR - Reverse Voltage (V) Figure 2. Typ. Diode Capacitance vs. Reverse Voltage Ptot - Power Dissipation (W) 3.0 Tie point temperature 2.5 2.0 1.5 1.0 Ambient temperature 0.5 0 0 17413 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) Figure 3. Power Dissipation vs. Ambient Temperature Document Number 81821 Rev. 1.0, 09-Jun-09 For technical support, please contact: Diodes-SSP@vishay.com www.vishay.com 3 BZD17C3V6P to BZD17C200P Vishay Semiconductors Package Dimensions in millimeters (inches): DO219AB 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.05 (0.002) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 1.7 (0.067) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 www.vishay.com 4 For technical support, please contact: Diodes-SSP@vishay.com Document Number 81821 Rev. 1.0, 09-Jun-09 BZD17C3V6P to BZD17C200P Vishay Semiconductors Blistertape for SMF Dimensions in millimeters PS 18513 Document Number 81821 Rev. 1.0, 09-Jun-09 For technical support, please contact: Diodes-SSP@vishay.com www.vishay.com 5