BZD27B110P-M3-08

BZD27B-M Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES eSMP® Series 2 1 23018 23019 SMF (DO-219AB) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VBR VWM PPPM TJ max. VZ specification Int. construction Polarity VALUE 3.6 to 200 5 to 100 7.35 to 196 6.2 to 160 150 175 Pulse current Single Uni-directional UNIT V mA V V W °C Available • Sillicon planar Zener diodes • Voltage range includes 43 breakdown voltages from 3.6 V to 200 V with ± 2 % for BZD27B-M Series • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • ESD capability according to AEC-Q101: human body model: > 8 kV machine model: > 800 V • Wave and reflow solderable • AEC-Q101 qualified available • Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade • Base P/N-HM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified (available on request) • Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION DEVICE NAME BZD27B-M Series ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZD27B3V6P-M3-08 to BZD27B200P-M3-08 BZD27B3V6P-M3-18 to BZD27B200P-M3-18 3000 per 7" reel (8mm tape) 10 000 per 13" reel (8 mm tape) MOQ = 30K MOQ = 50K PACKAGE PACKAGE NAME WEIGHT SMF (DO-219AB) 15 mg MOLDING COMPOUND MOISTURE SENSITIVITY WHISKER TEST FLAMMABILITY RATING LEVEL ACC. JESD 201 MSL level 1 Class 2 UL 94 V-0 (according J-STD-020) SOLDERING CONDITIONS Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Non repetitive peak surge power dissipation (2) TEST CONDITION SYMBOL VALUE UNIT TL = 105 °C TA = 30 °C (1) 100 μs square pulse 10/1000 μs waveform Ptot Ptot PZSM PRSM RthJL 2300 800 300 150 30 mW mW W W K/W RthJA 180 K/W Tj Tstg Top 175 -65 to +175 -65 to +175 °C °C °C Junction to lead Junction to ambient air Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick) Junction temperature Storage temperature range Operating temperature range Notes (1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick) (2) T = 25 °C prior to surge J Rev. 1.6, 26-Feb-2021 Document Number: 85922 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B-M Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE (1) TEST CURRENT VZ at IZT1 IZT1 V mA MARKING CODE MIN. NOM. MAX. REVERSE CURRENT DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 αVZ at IZT1 μA Ω V MAX. %/°C TYP. MAX. MIN. MAX. BZD27B3V6P-M 0N 3.53 3.6 3.67 100 100 1 4 8 -0.14 -0.04 BZD27B3V9P-M 1N 3.82 3.9 3.98 100 50 1 4 8 -0.14 -0.04 BZD27B4V3P-M 2N 4.21 4.3 4.39 100 25 1 4 7 -0.12 -0.02 BZD27B4V7P-M 3N 4.61 4.7 4.79 100 10 1 3 7 -0.1 0 BZD27B5V1P-M 4N 5.00 5.1 5.20 100 5 1 3 6 -0.08 0.02 BZD27B5V6P-M 5N 5.49 5.6 5.71 100 10 2 2 4 -0.04 0.04 BZD27B6V2P-M 6N 6.08 6.2 6.32 100 5 2 2 3 -0.01 0.06 BZD27B6V8P-M 7N 6.66 6.8 6.94 100 10 3 1 3 0 0.07 BZD27B7V5P-M 8N 7.35 7.5 7.65 100 50 3 1 2 0 0.07 BZD27B8V2P-M 9N 8.04 8.2 8.36 100 10 3 1 2 0.03 0.08 BZD27B9V1P-M 0O 8.92 9.1 9.28 50 10 5 2 4 0.03 0.08 BZD27B10P-M 1O 9.80 10 10.20 50 7 7.5 2 4 0.05 0.09 BZD27B11P-M 2O 10.78 11 11.22 50 4 8.2 4 7 0.05 0.1 BZD27B12P-M 3O 11.76 12 12.24 50 3 9.1 4 7 0.05 0.1 BZD27B13P-M 4O 12.74 13 13.26 50 2 10 5 10 0.05 0.1 BZD27B15P-M 5O 14.70 15 15.30 50 1 11 5 10 0.05 0.1 BZD27B16P-M 6O 15.68 16 16.32 25 1 12 6 15 0.06 0.11 BZD27B18P-M 7O 17.64 18 18.36 25 1 13 6 15 0.06 0.11 BZD27B20P-M 8O 19.60 20 20.40 25 1 15 6 15 0.06 0.11 BZD27B22P-M 9O 21.56 22 22.44 25 1 16 6 15 0.06 0.11 BZD27B24P-M 0P 23.52 24 24.48 25 1 18 7 15 0.06 0.11 BZD27B27P-M 1P 26.46 27 27.54 25 1 20 7 15 0.06 0.11 BZD27B30P-M 2P 29.40 30 30.60 25 1 22 8 15 0.06 0.11 BZD27B33P-M 3P 32.34 33 33.66 25 1 24 8 15 0.06 0.11 BZD27B36P-M 4P 35.28 36 36.72 10 1 27 21 40 0.06 0.11 BZD27B39P-M 5P 38.22 39 39.78 10 1 30 21 40 0.06 0.11 BZD27B43P-M 6P 42.14 43 43.86 10 1 33 24 45 0.07 0.12 BZD27B47P-M 7P 46.06 47 47.94 10 1 36 24 45 0.07 0.12 BZD27B51P-M 8P 49.98 51 52.02 10 1 39 25 60 0.07 0.12 BZD27B56P-M 9P 54.88 56 57.12 10 1 43 25 60 0.07 0.12 BZD27B62P-M 0Q 60.76 62 63.24 10 1 47 25 80 0.08 0.13 BZD27B68P-M 1Q 66.64 68 69.36 10 1 51 25 80 0.08 0.13 BZD27B75P-M 2Q 73.50 75 76.50 10 1 56 30 100 0.08 0.13 BZD27B82P-M 3Q 80.36 82 83.64 10 1 62 30 100 0.08 0.13 BZD27B91P-M 4Q 89.18 91 92.82 5 1 68 60 200 0.08 0.13 BZD27B100P-M 5Q 98.00 100 102.00 5 1 75 60 200 0.09 0.13 BZD27B110P-M 6Q 107.80 110 112.20 5 1 82 80 250 0.09 0.13 BZD27B120P-M 7Q 117.60 120 122.40 5 1 91 80 250 0.09 0.13 BZD27B130P-M 8Q 127.40 130 132.60 5 1 100 110 300 0.09 0.13 BZD27B150P-M 9Q 147.00 150 153.00 5 1 110 130 300 0.09 0.13 BZD27B160P-M 0R 156.80 160 163.20 5 1 120 150 350 0.09 0.13 BZD27B180P-M 1R 176.40 180 183.60 5 1 130 180 400 0.09 0.13 BZD27B200P-M 2R 196.00 200 204.00 5 1 150 200 500 0.09 0.13 Notes • Electrical characteristics when used as regulator diodes • Maximum VF = 1.2 V, at IF = 0.2 A (1) Pulse test: t ≤ 5 ms p Rev. 1.6, 26-Feb-2021 Document Number: 85922 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B-M Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE TEST CURRENT REVERSE CURRENT CLAMPING VOLTAGE TEMPERATURE COEFFICIENT VZ at IZT1 IZT1 IR at VR VC at IRSM (1) αVZ at IZT1 V mA MARKING CODE MIN. NOM. MAX. μA V MAX. V A MAX. %/C MIN. MAX. BZD27B7V5P-M 8N 7.35 7.5 7.65 100 1500 6.2 10.9 13.3 0 0.07 BZD27B8V2P-M 9N 8.04 8.2 8.36 100 1200 6.8 11.8 12.2 0.03 0.08 BZD27B9V1P-M 0O 8.92 9.1 9.28 50 100 7.5 12.9 11.3 0.03 0.08 BZD27B10P-M 1O 9.80 10 10.20 50 20 8.2 14.2 10.1 0.05 0.09 BZD27B11P-M 2O 10.78 11 11.22 50 5 9.1 15.2 9.6 0.05 0.1 BZD27B12P-M 3O 11.76 12 12.24 50 5 10 16 8.8 0.05 0.1 BZD27B13P-M 4O 12.74 13 13.26 50 5 11 17.8 7.9 0.05 0.1 BZD27B15P-M 5O 14.70 15 15.30 50 5 12 20.5 7.2 0.05 0.1 BZD27B16P-M 6O 15.68 16 16.32 25 5 13 21.9 6.6 0.06 0.11 BZD27B18P-M 7O 17.64 18 18.36 25 5 15 24.6 5.9 0.06 0.11 BZD27B20P-M 8O 19.60 20 20.40 25 5 16 27.3 5.3 0.06 0.11 BZD27B22P-M 9O 21.56 22 22.44 25 5 18 30 4.8 0.06 0.11 BZD27B24P-M 0P 23.52 24 24.48 25 5 20 32.3 4.4 0.06 0.11 BZD27B27P-M 1P 26.46 27 27.54 25 5 22 36.3 3.9 0.06 0.11 BZD27B30P-M 2P 29.40 30 30.60 25 5 24 40.4 3.6 0.06 0.11 BZD27B33P-M 3P 32.34 33 33.66 25 5 27 44.4 3.2 0.06 0.11 BZD27B36P-M 4P 35.28 36 36.72 10 5 30 48.4 3 0.06 0.11 BZD27B39P-M 5P 38.22 39 39.78 10 5 33 52.5 2.8 0.06 0.11 BZD27B43P-M 6P 42.14 43 43.86 10 5 36 57.9 2.5 0.07 0.12 BZD27B47P-M 7P 46.06 47 47.94 10 5 39 62.8 2.3 0.07 0.12 BZD27B51P-M 8P 49.98 51 52.02 10 5 43 68.2 2.1 0.07 0.12 BZD27B56P-M 9P 54.88 56 57.12 10 5 47 74.8 1.9 0.07 0.12 BZD27B62P-M 0Q 60.76 62 63.24 10 5 51 82.9 1.7 0.08 0.13 BZD27B68P-M 1Q 66.64 68 69.36 10 5 56 90.9 1.6 0.08 0.13 BZD27B75P-M 2Q 73.50 75 76.50 10 5 62 100.2 1.5 0.08 0.13 BZD27B82P-M 3Q 80.36 82 83.64 10 5 68 110 1.3 0.08 0.13 BZD27B91P-M 4Q 89.18 91 92.82 5 5 75 122 1.2 0.09 0.13 BZD27B100P-M 5Q 98.00 100 102.00 5 5 82 134 1.1 0.09 0.13 BZD27B110P-M 6Q 107.80 110 112.20 5 5 91 145 1 0.09 0.13 BZD27B120P-M 7Q 117.60 120 122.40 5 5 100 161 0.9 0.09 0.13 BZD27B130P-M 8Q 127.40 130 132.60 5 5 110 174 0.81 0.09 0.13 BZD27B150P-M 9Q 147.00 150 153.00 5 5 120 201 0.73 0.09 0.13 BZD27B160P-M 0R 156.80 160 163.20 5 5 130 214 0.67 0.09 0.13 BZD27B180P-M 1R 176.40 180 183.60 5 5 150 242 0.6 0.09 0.13 BZD27B200P-M 2R 196.00 200 204.00 5 5 160 268 0.54 0.09 0.13 Notes • Electrical characteristics when used as protection diodes (1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4 Rev. 1.6, 26-Feb-2021 Document Number: 85922 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B-M Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 IF - Forward Current (A) IRSM (%) Max. VF t1 = 10 µs t2 = 1000 µs 100 Typ. VF 90 1 50 10 0.1 0.6 0.8 17411 1.0 1.2 1.4 Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition 14 B5V1P B6V8P 12 B18P B12P PZSM Peak Surge Power (W) CD - Typ. Junction Capacitance (pF) 10 000 1000 100 B27P B51P 10 8 0 0.5 1.0 1.5 2.0 2.5 4 P (RthJA) 0 0.001 0.01 22987 100 1000 1000 3.0 2.0 1.5 RthJA = 180K/W 1.0 0.5 0 25 50 75 Zth Thermal Impedance (K/W) Typ. Zth = f (tp) RthJL = 30K/W 2.5 22774 0.1 1 10 tp Pulse Width (s) Fig. 5 - Typical Repetitive Peak Surge Power Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage 0 P (RthJL) Typ. PZSM = f (tp) 2 3.0 VR - Reverse Voltage (V) 22806 Chart valid for TJ = 175 °C; TA = 25 °C, and a duty cycle of D = 0.5 Duty cycle D tp tp D= T T TJ max. - TA PZSM = D x (Rth - Zth (tp)) + Zth (tp) 6 B200P 10 Ptot - Total Power Dissipation (W) t2 17415 VF - Forward Voltage (V) t t1 1.6 100 RthJL 10 1 0.001 0.01 100 125 150 175 Tamb - Ambient Temperature (°C) Fig. 3 - Power Dissipation vs. Ambient Temperature RthJA 3 mm x 3 mm pad 22988 0.1 1 10 tp Pulse Width (s) 100 1000 Fig. 6 - Typical Thermal Impedance vs. Time Rev. 1.6, 26-Feb-2021 Document Number: 85922 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B-M Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB) 0.85 [0.033] 0.35 [0.014] 0.1 [0.004] 0 [0.000] 5° 5° 1.2 [0.047] 1.7 [0.067] 1.9 [0.075] 0.8 [0.031] Detail Z enlarged 0.1 [0.004] 0.25 [0.010] 1.8 [0.071] min. 1.08 [0.043] 0.88 [0.035] 2.9 [0.114] 2.7 [0.106] 3.9 [0.154] 3.5 [0.138] foot print recommendation: Reflow soldering 1.3 [0.051] 1.4 [0.055] 1.3 [0.051] 2.9 [0.114] Created - Date: 15. February 2005 Rev. 6 - Date: 24.Feb.2021 Document no.: S8-V-3915.01-001 (4) 22989 Rev. 1.6, 26-Feb-2021 Document Number: 85922 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B-M Series www.vishay.com Vishay Semiconductors ORIENTATION IN CARRIER TAPE - SMF (DO-219AB) Unreeling direction SMF cathode Top view Document no.: S8-V-3717.02-003 (4) Created - Date: 09. Feb. 2010 22670 Rev. 1.6, 26-Feb-2021 Document Number: 85922 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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