BZD27B24P-E3-08

BZD27B Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES eSMP® Series • Sillicon planar Zener diodes Available • Voltage range includes 43 breakdown voltages from 3.6 V to 200 V with ± 2 % for BZD27B Series • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • ESD capability according to AEC-Q101: human body model: > 8 kV machine model: > 800 V • Wave and reflow solderable • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, and commercial grade • Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified 2 1 23018 23019 SMF (DO-219AB) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VBR VWM PPPM TJ max. VZ specification Circuit configuration Polarity VALUE 3.6 to 200 5 to 100 7.35 to 196 6.2 to 160 150 175 Pulse current Single Uni-directional UNIT V mA V V W °C • Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ORDERING INFORMATION DEVICE NAME BZD27B Series ORDERING CODE BZD27B3V6P-E3-08 to BZD27B200P-E3-08 BZD27B3V6P-HE3-08 to BZD27B200P-HE3-08 BZD27B3V6P-E3-18 to BZD27B200P-E3-18 BZD27B3V6P-HE3-18 to BZD27B200P-HE3-18 TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 per 7" reel (8 mm tape) MOQ = 30K 10 000 per 13" reel (8 mm tape) MOQ = 50K PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING SMF (DO-219AB) 15 mg UL 94 V-0 MOISTURE SENSITIVITY WHISKER TEST LEVEL ACC. JESD 201 MSL level 1 (according J-STD-020) Class 2 SOLDERING CONDITIONS Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Non repetitive peak surge power dissipation (2) TEST CONDITION SYMBOL VALUE UNIT TL = 105 °C TA = 30 °C (1) 100 μs square pulse 10/1000 μs waveform Ptot Ptot PZSM PRSM RthJL 2300 800 300 150 30 mW mW W W K/W RthJA 180 K/W Tj Tstg Top 175 -65 to +175 -65 to +175 °C °C °C Junction to lead Junction to ambient air Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick) Junction temperature Storage temperature range Operating temperature range Notes (1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick) (2) T = 25 °C prior to surge J Rev. 2.0, 26-Feb-2021 Document Number: 85921 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE (1) TEST CURRENT VZ at IZT1 IZT1 V mA MARKING CODE MIN. NOM. MAX. REVERSE CURRENT DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 αVZ at IZT1 μA Ω V MAX. %/°C TYP. MAX. MIN. MAX. BZD27B3V6P 0D 3.53 3.6 3.67 100 100 1 4 8 -0.14 -0.04 BZD27B3V9P 1D 3.82 3.9 3.98 100 50 1 4 8 -0.14 -0.04 BZD27B4V3P 2D 4.21 4.3 4.39 100 25 1 4 7 -0.12 -0.02 BZD27B4V7P 3D 4.61 4.7 4.79 100 10 1 3 7 -0.1 0 BZD27B5V1P 4D 5.00 5.1 5.20 100 5 1 3 6 -0.08 0.02 BZD27B5V6P 5D 5.49 5.6 5.71 100 10 2 2 4 -0.04 0.04 BZD27B6V2P 6D 6.08 6.2 6.32 100 5 2 2 3 -0.01 0.06 BZD27B6V8P 7D 6.66 6.8 6.94 100 10 3 1 3 0 0.07 BZD27B7V5P 8D 7.35 7.5 7.65 100 50 3 1 2 0 0.07 BZD27B8V2P 9D 8.04 8.2 8.36 100 10 3 1 2 0.03 0.08 BZD27B9V1P 0E 8.92 9.1 9.28 50 10 5 2 4 0.03 0.08 BZD27B10P 1E 9.80 10 10.20 50 7 7.5 2 4 0.05 0.09 BZD27B11P 2E 10.78 11 11.22 50 4 8.2 4 7 0.05 0.1 BZD27B12P 3E 11.76 12 12.24 50 3 9.1 4 7 0.05 0.1 BZD27B13P 4E 12.74 13 13.26 50 2 10 5 10 0.05 0.1 BZD27B15P 5E 14.70 15 15.30 50 1 11 5 10 0.05 0.1 BZD27B16P 6E 15.68 16 16.32 25 1 12 6 15 0.06 0.11 BZD27B18P 7E 17.64 18 18.36 25 1 13 6 15 0.06 0.11 BZD27B20P 8E 19.60 20 20.40 25 1 15 6 15 0.06 0.11 BZD27B22P 9E 21.56 22 22.44 25 1 16 6 15 0.06 0.11 BZD27B24P 0F 23.52 24 24.48 25 1 18 7 15 0.06 0.11 BZD27B27P 1F 26.46 27 27.54 25 1 20 7 15 0.06 0.11 BZD27B30P 2F 29.40 30 30.60 25 1 22 8 15 0.06 0.11 BZD27B33P 3F 32.34 33 33.66 25 1 24 8 15 0.06 0.11 BZD27B36P 4F 35.28 36 36.72 10 1 27 21 40 0.06 0.11 BZD27B39P 5F 38.22 39 39.78 10 1 30 21 40 0.06 0.11 BZD27B43P 6F 42.14 43 43.86 10 1 33 24 45 0.07 0.12 BZD27B47P 7F 46.06 47 47.94 10 1 36 24 45 0.07 0.12 BZD27B51P 8F 49.98 51 52.02 10 1 39 25 60 0.07 0.12 BZD27B56P 9F 54.88 56 57.12 10 1 43 25 60 0.07 0.12 BZD27B62P 0G 60.76 62 63.24 10 1 47 25 80 0.08 0.13 BZD27B68P 1G 66.64 68 69.36 10 1 51 25 80 0.08 0.13 BZD27B75P 2G 73.50 75 76.50 10 1 56 30 100 0.08 0.13 BZD27B82P 3G 80.36 82 83.64 10 1 62 30 100 0.08 0.13 BZD27B91P 4G 89.18 91 92.82 5 1 68 60 200 0.08 0.13 BZD27B100P 5G 98.00 100 102.00 5 1 75 60 200 0.09 0.13 BZD27B110P 6G 107.80 110 112.20 5 1 82 80 250 0.09 0.13 BZD27B120P 7G 117.60 120 122.40 5 1 91 80 250 0.09 0.13 BZD27B130P 8G 127.40 130 132.60 5 1 100 110 300 0.09 0.13 BZD27B150P 9G 147.00 150 153.00 5 1 110 130 300 0.09 0.13 BZD27B160P 0H 156.80 160 163.20 5 1 120 150 350 0.09 0.13 BZD27B180P 1H 176.40 180 183.60 5 1 130 180 400 0.09 0.13 BZD27B200P 2H 196.00 200 204.00 5 1 150 200 500 0.09 0.13 Notes • Maximum VF = 1.2 V, at IF = 0.2 A • Electrical characteristics when used as voltage regulator diodes (1) Pulse test: t ≤ 5 ms p Rev. 2.0, 26-Feb-2021 Document Number: 85921 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE TEST CURRENT REVERSE CURRENT CLAMPING VOLTAGE TEMPERATURE COEFFICIENT VZ at IZT1 IZT1 IR at VR VC at IRSM (1) αVZ at IZT1 V mA MARKING CODE MIN. NOM. MAX. μA V MAX. V A MAX. %/C MIN. MAX. BZD27B7V5P 8D 7.35 7.5 7.65 100 1500 6.2 10.9 13.3 0 0.07 BZD27B8V2P 9D 8.04 8.2 8.36 100 1200 6.8 11.8 12.2 0.03 0.08 BZD27B9V1P 0E 8.92 9.1 9.28 50 100 7.5 12.9 11.3 0.03 0.08 BZD27B10P 1E 9.80 10 10.20 50 20 8.2 14.2 10.1 0.05 0.09 BZD27B11P 2E 10.78 11 11.22 50 5 9.1 15.2 9.6 0.05 0.1 BZD27B12P 3E 11.76 12 12.24 50 5 10 16 8.8 0.05 0.1 BZD27B13P 4E 12.74 13 13.26 50 5 11 17.8 7.9 0.05 0.1 BZD27B15P 5E 14.70 15 15.30 50 5 12 20.5 7.2 0.05 0.1 BZD27B16P 6E 15.68 16 16.32 25 5 13 21.9 6.6 0.06 0.11 BZD27B18P 7E 17.64 18 18.36 25 5 15 24.6 5.9 0.06 0.11 BZD27B20P 8E 19.60 20 20.40 25 5 16 27.3 5.3 0.06 0.11 BZD27B22P 9E 21.56 22 22.44 25 5 18 30 4.8 0.06 0.11 BZD27B24P 0F 23.52 24 24.48 25 5 20 32.3 4.4 0.06 0.11 BZD27B27P 1F 26.46 27 27.54 25 5 22 36.3 3.9 0.06 0.11 BZD27B30P 2F 29.40 30 30.60 25 5 24 40.4 3.6 0.06 0.11 BZD27B33P 3F 32.34 33 33.66 25 5 27 44.4 3.2 0.06 0.11 BZD27B36P 4F 35.28 36 36.72 10 5 30 48.4 3 0.06 0.11 BZD27B39P 5F 38.22 39 39.78 10 5 33 52.5 2.8 0.06 0.11 BZD27B43P 6F 42.14 43 43.86 10 5 36 57.9 2.5 0.07 0.12 BZD27B47P 7F 46.06 47 47.94 10 5 39 62.8 2.3 0.07 0.12 BZD27B51P 8F 49.98 51 52.02 10 5 43 68.2 2.1 0.07 0.12 BZD27B56P 9F 54.88 56 57.12 10 5 47 74.8 1.9 0.07 0.12 BZD27B62P 0G 60.76 62 63.24 10 5 51 82.9 1.7 0.08 0.13 BZD27B68P 1G 66.64 68 69.36 10 5 56 90.9 1.6 0.08 0.13 BZD27B75P 2G 73.50 75 76.50 10 5 62 100.2 1.5 0.08 0.13 BZD27B82P 3G 80.36 82 83.64 10 5 68 110 1.3 0.08 0.13 BZD27B91P 4G 89.18 91 92.82 5 5 75 122 1.2 0.09 0.13 BZD27B100P 5G 98.00 100 102.00 5 5 82 134 1.1 0.09 0.13 BZD27B110P 6G 107.80 110 112.20 5 5 91 145 1 0.09 0.13 BZD27B120P 7G 117.60 120 122.40 5 5 100 161 0.9 0.09 0.13 BZD27B130P 8G 127.40 130 132.60 5 5 110 174 0.81 0.09 0.13 BZD27B150P 9G 147.00 150 153.00 5 5 120 201 0.73 0.09 0.13 BZD27B160P 0H 156.80 160 163.20 5 5 130 214 0.67 0.09 0.13 BZD27B180P 1H 176.40 180 183.60 5 5 150 242 0.6 0.09 0.13 BZD27B200P 2H 196.00 200 204.00 5 5 160 268 0.54 0.09 0.13 Notes • Maximum VF = 1.2 V, at IF = 0.2 A • Electrical characteristics when used as protection diodes (1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4 Rev. 2.0, 26-Feb-2021 Document Number: 85921 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 IF - Forward Current (A) IRSM (%) Max. VF t1 = 10 µs t2 = 1000 µs 100 Typ. VF 90 1 50 10 0.1 0.6 0.8 17411 1.0 1.2 1.4 Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition 14 B5V1P B6V8P 12 B18P B12P PZSM Peak Surge Power (W) CD - Typ. Junction Capacitance (pF) 10 000 1000 100 B27P B51P 10 8 0 0.5 1.0 1.5 2.0 2.5 4 P (RthJA) 0 0.001 0.01 22987 100 1000 1000 3.0 2.0 1.5 RthJA = 180K/W 1.0 0.5 0 25 50 75 Zth Thermal Impedance (K/W) Typ. Zth = f (tp) RthJL = 30K/W 2.5 22774 0.1 1 10 tp Pulse Width (s) Fig. 5 - Typical Repetitive Peak Surge Power Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage 0 P (RthJL) Typ. PZSM = f (tp) 2 3.0 VR - Reverse Voltage (V) 22806 Chart valid for TJ = 175 °C; TA = 25 °C, and a duty cycle of D = 0.5 Duty cycle D tp tp D= T T TJ max. - TA PZSM = D x (Rth - Zth (tp)) + Zth (tp) 6 B200P 10 Ptot - Total Power Dissipation (W) t2 17415 VF - Forward Voltage (V) t t1 1.6 100 RthJL 10 1 0.001 0.01 100 125 150 175 Tamb - Ambient Temperature (°C) Fig. 3 - Power Dissipation vs. Ambient Temperature RthJA 3 mm x 3 mm pad 22988 0.1 1 10 tp Pulse Width (s) 100 1000 Fig. 6 - Typical Thermal Impedance vs. Time Rev. 2.0, 26-Feb-2021 Document Number: 85921 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB) 0.85 [0.033] 0.35 [0.014] 0.1 [0.004] 0 [0.000] 5° 5° 1.2 [0.047] 1.7 [0.067] 1.9 [0.075] 0.8 [0.031] Detail Z enlarged 0.1 [0.004] 0.25 [0.010] 1.8 [0.071] min. 1.08 [0.043] 0.88 [0.035] 2.9 [0.114] 2.7 [0.106] 3.9 [0.154] 3.5 [0.138] foot print recommendation: Reflow soldering 1.3 [0.051] 1.4 [0.055] 1.3 [0.051] 2.9 [0.114] Created - Date: 15. February 2005 Rev. 6 - Date: 24.Feb.2021 Document no.: S8-V-3915.01-001 (4) 22989 Rev. 2.0, 26-Feb-2021 Document Number: 85921 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27B Series www.vishay.com Vishay Semiconductors ORIENTATION IN CARRIER TAPE - SMF (DO-219AB) Unreeling direction SMF cathode Top view Document no.: S8-V-3717.02-003 (4) Created - Date: 09. Feb. 2010 22670 Rev. 2.0, 26-Feb-2021 Document Number: 85921 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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