BZD27C Series
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Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
eSMP® Series
• Sillicon planar Zener diodes
Available
• Low profile surface-mount package
• Zener and surge current specification
2
1
• Low leakage current
• Excellent stability
23018
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
23019
SMF (DO-219AB)
• Meets JESD 201 class 2 whisker test
LINKS TO ADDITIONAL RESOURCES
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
3D 3D
3D Models
• Wave and reflow solderable
• AEC-Q101 qualified available
PRIMARY CHARACTERISTICS
PARAMETER
VZ range nom.
Test current IZT
VBR
VWM
PPPM
TJ max.
VZ specification
Circuit configuration
Polarity
VALUE
3.6 to 200
5 to 100
7 to 188
6.2 to 160
150
175
Pulse current
Single
Uni-directional
• Base P/N-E3 - RoHS-compliant, and commercial grade
UNIT
V
mA
V
V
W
°C
• Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified
• Compatible to SOD-123W package case outline or
SOD-123F and SOD-123FL
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
BZD27C Series
ORDERING CODE
BZD27C3V6P-E3-08 to BZD27C200P-E3-08
BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08
BZD27C3V6P-E3-18 to BZD27C200P-E3-18
BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 per 7" reel (8 mm tape)
MOQ = 30K
10 000 per 13" reel (8 mm tape)
MOQ = 50K
PACKAGE
PACKAGE NAME
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
SMF (DO-219AB)
15 mg
UL 94 V-0
MOISTURE SENSITIVITY WHISKER TEST
SOLDERING CONDITIONS
LEVEL
ACC. JESD 201
MSL level 1
class 2
Peak temperature max. 260 °C
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power dissipation (2)
TEST CONDITION
TL = 105 °C
TA = 30 °C (1)
100 μs square pulse
10/1000 μs waveform
SYMBOL
Ptot
Ptot
PZSM
PRSM
RthJL
VALUE
2300
800
300
150
30
UNIT
mW
mW
W
W
K/W
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads (≥ 40 μm thick)
RthJA
180
K/W
Tj
Tstg
Top
175
-65 to +175
-65 to +175
°C
°C
°C
Junction to lead
Junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick)
(2) T = 25 °C prior to surge
J
Rev. 2.0, 26-Feb-2021
Document Number: 85153
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
VZ at IZT1
IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1
αVZ at IZT1
μA
Ω
V
MAX.
%/°C
TYP.
MAX.
MIN.
MAX.
-0.04
BZD27C3V6P
D0
3.4
3.6
3.8
100
100
1
4
8
-0.14
BZD27C3V9P
D1
3.7
3.9
4.1
100
50
1
4
8
-0.14
-0.04
BZD27C4V3P
D2
4
4.3
4.6
100
25
1
4
7
-0.12
-0.02
BZD27C4V7P
D3
4.4
4.7
5
100
10
1
3
7
-0.1
0
BZD27C5V1P
D4
4.8
5.1
5.4
100
5
1
3
6
-0.08
0.02
BZD27C5V6P
D5
5.2
5.6
6
100
10
2
2
4
-0.04
0.04
BZD27C6V2P
D6
5.8
6.2
6.6
100
5
2
2
3
-0.01
0.06
BZD27C6V8P
D7
6.4
6.8
7.2
100
10
3
1
3
0
0.07
BZD27C7V5P
D8
7
7.5
7.9
100
50
3
1
2
0
0.07
BZD27C8V2P
D9
7.7
8.2
8.7
100
10
3
1
2
0.03
0.08
BZD27C9V1P
E0
8.5
9.1
9.6
50
10
5
2
4
0.03
0.08
BZD27C10P
E1
9.4
10
10.6
50
7
7.5
2
4
0.05
0.09
BZD27C11P
E2
10.4
11
11.6
50
4
8.2
4
7
0.05
0.1
BZD27C12P
E3
11.4
12
12.7
50
3
9.1
4
7
0.05
0.1
BZD27C13P
E4
12.4
13
14.1
50
2
10
5
10
0.05
0.1
BZD27C15P
E5
13.8
15
15.6
50
1
11
5
10
0.05
0.1
BZD27C16P
E6
15.3
16
17.1
25
1
12
6
15
0.06
0.11
BZD27C18P
E7
16.8
18
19.1
25
1
13
6
15
0.06
0.11
BZD27C20P
E8
18.8
20
21.2
25
1
15
6
15
0.06
0.11
BZD27C22P
E9
20.8
22
23.3
25
1
16
6
15
0.06
0.11
BZD27C24P
F0
22.8
24
25.6
25
1
18
7
15
0.06
0.11
BZD27C27P
F1
25.1
27
28.9
25
1
20
7
15
0.06
0.11
BZD27C30P
F2
28
30
32
25
1
22
8
15
0.06
0.11
BZD27C33P
F3
31
33
35
25
1
24
8
15
0.06
0.11
BZD27C36P
F4
34
36
38
10
1
27
21
40
0.06
0.11
BZD27C39P
F5
37
39
41
10
1
30
21
40
0.06
0.11
BZD27C43P
F6
40
43
46
10
1
33
24
45
0.07
0.12
BZD27C47P
F7
44
47
50
10
1
36
24
45
0.07
0.12
BZD27C51P
F8
48
51
54
10
1
39
25
60
0.07
0.12
BZD27C56P
F9
52
56
60
10
1
43
25
60
0.07
0.12
BZD27C62P
G0
58
62
66
10
1
47
25
80
0.08
0.13
BZD27C68P
G1
64
68
72
10
1
51
25
80
0.08
0.13
BZD27C75P
G2
70
75
79
10
1
56
30
100
0.08
0.13
BZD27C82P
G3
77
82
87
10
1
62
30
100
0.08
0.13
BZD27C91P
G4
85
91
96
5
1
68
60
200
0.08
0.13
BZD27C100P
G5
94
100
106
5
1
75
60
200
0.09
0.13
BZD27C110P
G6
104
110
116
5
1
82
80
250
0.09
0.13
BZD27C120P
G7
114
120
127
5
1
91
80
250
0.09
0.13
BZD27C130P
G8
124
130
141
5
1
100
110
300
0.09
0.13
BZD27C150P
G9
138
150
156
5
1
110
130
300
0.09
0.13
BZD27C160P
H0
153
160
171
5
1
120
150
350
0.09
0.13
BZD27C180P
H1
168
180
191
5
1
130
180
400
0.09
0.13
5
1
150
200
500
0.09
0.13
BZD27C200P
H2
188
200
212
Notes
• Maximum VF = 1.2 V, at IF = 0.2 A
• Electrical characteristics when used as voltage regulator diodes
(1) Pulse test: t ≤ 5 ms
p
Rev. 2.0, 26-Feb-2021
Document Number: 85153
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZD27C Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1
IZT1
IR at VR
VC at IRSM (1)
αVZ at IZT1
V
mA
MARKING
CODE
MIN.
NOM.
MAX.
μA
V
MAX.
V
A
MAX.
%/C
MIN.
MAX.
BZD27C7V5P
D8
7
7.5
7.9
100
1500
6.2
11.3
13.3
0
0.07
BZD27C8V2P
D9
7.7
8.2
8.7
100
1200
6.8
12.3
12.2
0.03
0.08
BZD27C9V1P
E0
8.5
9.1
9.6
50
100
7.5
13.3
11.3
0.03
0.08
BZD27C10P
E1
9.4
10
10.6
50
20
8.2
14.8
10.1
0.05
0.09
BZD27C11P
E2
10.4
11
11.6
50
5
9.1
15.7
9.6
0.05
0.1
BZD27C12P
E3
11.4
12
12.7
50
5
10
17
8.8
0.05
0.1
BZD27C13P
E4
12.4
13
14.1
50
5
11
18.9
7.9
0.05
0.1
BZD27C15P
E5
13.8
15
15.6
50
5
12
20.9
7.2
0.05
0.1
BZD27C16P
E6
15.3
16
17.1
25
5
13
22.9
6.6
0.06
0.11
BZD27C18P
E7
16.8
18
19.1
25
5
15
25.6
5.9
0.06
0.11
BZD27C20P
E8
18.8
20
21.2
25
5
16
28.4
5.3
0.06
0.11
BZD27C22P
E9
20.8
22
23.3
25
5
18
31
4.8
0.06
0.11
BZD27C24P
F0
22.8
24
25.6
25
5
20
33.8
4.4
0.06
0.11
BZD27C27P
F1
25.1
27
28.9
25
5
22
38.1
3.9
0.06
0.11
BZD27C30P
F2
28
30
32
25
5
24
42.2
3.6
0.06
0.11
BZD27C33P
F3
31
33
35
25
5
27
46.2
3.2
0.06
0.11
BZD27C36P
F4
34
36
38
10
5
30
50.1
3
0.06
0.11
BZD27C39P
F5
37
39
41
10
5
33
54.1
2.8
0.06
0.11
BZD27C43P
F6
40
43
46
10
5
36
60.7
2.5
0.07
0.12
BZD27C47P
F7
44
47
50
10
5
39
65.5
2.3
0.07
0.12
BZD27C51P
F8
48
51
54
10
5
43
70.8
2.1
0.07
0.12
BZD27C56P
F9
52
56
60
10
5
47
78.6
1.9
0.07
0.12
BZD27C62P
G0
58
62
66
10
5
51
86.5
1.7
0.08
0.13
BZD27C68P
G1
64
68
72
10
5
56
94.4
1.6
0.08
0.13
BZD27C75P
G2
70
75
79
10
5
62
103.5
1.5
0.08
0.13
BZD27C82P
G3
77
82
87
10
5
68
114
1.3
0.08
0.13
BZD27C91P
G4
85
91
96
5
5
75
126
1.2
0.09
0.13
BZD27C100P
G5
94
100
106
5
5
82
139
1.1
0.09
0.13
BZD27C110P
G6
104
110
116
5
5
91
150
1
0.09
0.13
BZD27C120P
G7
114
120
127
5
5
100
167
0.9
0.09
0.13
BZD27C130P
G8
124
130
141
5
5
110
185
0.81
0.09
0.13
BZD27C150P
G9
138
150
156
5
5
120
205
0.73
0.09
0.13
BZD27C160P
H0
153
160
171
5
5
130
224
0.67
0.09
0.13
BZD27C180P
H1
168
180
191
5
5
150
252
0.6
0.09
0.13
BZD27C200P
H2
188
200
212
5
5
160
278
0.54
0.09
0.13
Notes
• Maximum VF = 1.2 V, at IF = 0.2 A
• Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
Rev. 2.0, 26-Feb-2021
Document Number: 85153
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10
IF - Forward Current (A)
IRSM
(%)
Max. VF
t1 = 10 µs
t2 = 1000 µs
100
Typ. VF
90
1
50
10
0.1
0.6
0.8
17411
1.0
1.2
1.4
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
14
C6V8P
12
C18P
C12P
PZSM Peak Surge Power (W)
CD - Typ. Junction Capacitance (pF)
10 000
C5V1P
1000
100
C27P
C51P
10
8
0
0.5
17412
1.0
1.5
2.0
2.5
4
P (RthJA)
0
0.001 0.01
22987
1000
Typ. Zth = f (tp)
RthJL = 30K/W
2.5
2.0
1.5
RthJA = 180K/W
1.0
0.5
0
25
50
75
Zth Thermal Impedance (K/W)
Ptot - Total Power Dissipation (W)
100
1000
3.0
22774
0.1
1
10
tp Pulse Width (s)
Fig. 5 - Typical Repetitive Peak Surge Power
Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage
0
P (RthJL)
Typ. PZSM = f (tp)
2
3.0
VR - Reverse Voltage (V)
Chart valid for TJ = 175 °C; TA = 25 °C, and a duty
cycle of D = 0.5
Duty cycle D
tp
tp
D=
T
T
TJ max. - TA
PZSM =
D x (Rth - Zth (tp)) + Zth (tp)
6
C200P
10
t2
17415
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
t
t1
1.6
100
RthJL
10
1
0.001 0.01
100 125 150 175
Tamb - Ambient Temperature (°C)
Fig. 3 - Power Dissipation vs. Ambient Temperature
RthJA 3 mm x 3 mm pad
22988
0.1
1
10
tp Pulse Width (s)
100
1000
Fig. 6 - Typical Thermal Impedance vs. Time
Rev. 2.0, 26-Feb-2021
Document Number: 85153
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BZD27C Series
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PACKAGE DIMENSIONS in millimeters (inches): SMF (DO-219AB)
0.85 [0.033]
0.35 [0.014]
0.1 [0.004]
0 [0.000]
5°
5°
1.2 [0.047]
1.7 [0.067]
1.9 [0.075]
0.8 [0.031]
Detail Z
enlarged
0.1 [0.004]
0.25 [0.010]
1.8 [0.071] min.
1.08 [0.043]
0.88 [0.035]
2.9 [0.114]
2.7 [0.106]
3.9 [0.154]
3.5 [0.138]
foot print recommendation:
Reflow soldering
1.3 [0.051]
1.4 [0.055]
1.3 [0.051]
2.9 [0.114]
Created - Date: 15. February 2005
Rev. 6 - Date: 24.Feb.2021
Document no.: S8-V-3915.01-001 (4)
22989
Rev. 2.0, 26-Feb-2021
Document Number: 85153
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ORIENTATION IN CARRIER TAPE - SMF (DO-219AB)
Unreeling direction
SMF
cathode
Top view
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010
22670
Rev. 2.0, 26-Feb-2021
Document Number: 85153
6
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Revision: 01-Jan-2022
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Document Number: 91000