BZG04-M-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
FEATURES
• High reliability
• Stand-off voltage range 8.2 V to 220 V
• Excellent clamping capability
• Fast response time
• AEC-Q101 qualified available
• Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
SMA (DO-214AC)
• Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
10 to 270
V
Test current IZT
2 to 50
mA
VBR
9.4 to 251
V
VWM
8.2 to 220
V
PPPM
300
W
150
°C
TJ max.
VZ specification
Circuit configuration
Polarity
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
UNIT
APPLICATIONS
• Protection from high voltage, high energy transients
Pulse current
Single
Uni-directional
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZG04-M-series
BZG04-M-series
BZG04xxx-M3-08
1500 per 7" reel
6000/box
BZG04xxx-M3-18
6000 per 13" reel
6000/box
BZG04-M-series
BZG04xxx-HM3-08
1500 per 7" reel
6000/box
BZG04-M-series
BZG04xxx-HM3-18
6000 per 13" reel
6000/box
PACKAGE
PACKAGE NAME
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
SMA (DO-214AC)
73 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
RthJA < 25 K/W, Tamb = 100 °C
Ptot
3000
mW
RthJA < 100 K/W, Tamb = 50 °C
Ptot
1250
mW
Non repetitive peak surge power dissipation
tp = 10/1000 μs exp. pulse,
Tj = 25 °C prior to surge
PZSM
300
W
Peak forward surge current
10 ms single half sine wave
Power dissipation
Junction to lead
Junction to ambient air
50
A
25
K/W
Mounted on epoxy-glass hard tissue, fig. 1a
RthJA
150
K/W
Mounted on epoxy-glass hard tissue, fig. 1b
RthJA
125
K/W
Mounted on Al-oxide-ceramic (Al2O3), fig. 1b
RthJA
100
K/W
Tj
150
°C
Tstg
-65 to +150
°C
VF
1.2
V
Junction temperature
Storage temperature range
Forward voltage (max.)
IFSM
RthJL
IF = 0.5 A
Rev. 1.0, 13-Oct-17
Document Number: 86139
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZG04-M-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART
NUMBER
ZENER
VOLTAGE
RANGE
TEST
CURRENT
STAND OFF
VOLTAGE
BREAKDOWN
VOLTAGE
VZ at IZT1
IZT1
VR at IR
V(BR) at IZT1
V
mA
V
NOM.
CLAMPING
VOLTAGE (1)
VCL(R)
at IPP
IPP
A
μA
V
V
MAX.
MIN.
MIN.
TEMPERATURE
JUNCTION
COEFFICIENT CAPACITANCE
TKVZ at IZT1
%/K
Cj at
VR = 0 V,
f = 1 MHZ
pF
TYP.
MAX.
TYP.
1200
BZG04-8V2-M
10
50
8.2
20
9.4
14.8
20.3
0.05
0.09
BZG04-9V1-M
11
50
9.1
5
10.4
15.7
19.1
0.05
0.1
1100
BZG04-10-M
12
50
10
5
11.4
17
17.7
0.05
0.1
1000
BZG04-11-M
13
50
11
5
12.4
18.9
15.9
0.05
0.1
850
BZG04-12-M
15
50
12
5
13.8
20.9
14.4
0.05
0.1
815
BZG04-13-M
16
25
13
5
15.3
22.9
13.1
0.06
0.11
785
BZG04-15-M
18
25
15
5
16.8
25.6
11.7
0.06
0.11
710
BZG04-16-M
20
25
16
5
18.8
28.4
10.6
0.06
0.11
655
BZG04-18-M
22
25
18
5
20.8
31
9.7
0.06
0.11
610
BZG04-20-M
24
25
20
5
22.8
33.8
8.9
0.06
0.11
570
BZG04-22-M
27
25
22
5
25.1
38.1
7.9
0.06
0.11
545
BZG04-24-M
30
25
24
5
28
42.2
7.1
0.06
0.11
505
BZG04-27-M
33
25
27
5
31
46.2
6.5
0.06
0.11
475
BZG04-30-M
36
10
30
5
34
50.1
6
0.06
0.11
450
BZG04-33-M
39
10
33
5
37
54.1
5.5
0.06
0.11
420
BZG04-36-M
43
10
36
5
40
60.7
4.9
0.07
0.12
390
BZG04-39-M
47
10
39
5
44
65.5
4.6
0.07
0.12
370
BZG04-43-M
51
10
43
5
48
70.8
4.2
0.07
0.12
350
BZG04-47-M
56
10
47
5
52
78.6
3.8
0.07
0.12
330
BZG04-51-M
62
10
51
5
58
86.5
3.5
0.08
0.13
310
BZG04-56-M
68
10
56
5
64
94.4
3.2
0.08
0.13
291
BZG04-62-M
75
10
62
5
70
103.5
2.9
0.08
0.13
280
BZG04-68-M
82
10
68
5
77
114
2.6
0.08
0.13
275
BZG04-75-M
91
5
75
5
85
126
2.4
0.09
0.13
260
BZG04-82-M
100
5
82
5
94
139
2.2
0.09
0.13
250
BZG04-91-M
110
5
91
5
104
152
2
0.09
0.13
243
BZG04-100-M
120
5
100
5
114
167
1.8
0.09
0.13
170
BZG04-110-M
130
5
110
5
124
185
1.6
0.09
0.13
153
BZG04-120-M
150
5
120
5
138
204
1.5
0.09
0.13
150
BZG04-130-M
160
5
130
5
153
224
1.3
0.09
0.13
145
BZG04-150-M
180
5
150
5
168
249
1.2
0.09
0.13
140
BZG04-160-M
200
5
160
5
188
276
1.1
0.09
0.13
135
BZG04-180-M
220
2
180
5
208
305
1
0.09
0.13
131
BZG04-200-M
240
2
200
5
228
336
0.9
0.09
0.13
122
BZG04-220-M
270
2
220
5
251
380
0.8
0.09
0.13
120
Note
(1) 10/1000 μs pulse
Rev. 1.0, 13-Oct-17
Document Number: 86139
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZG04-M-Series
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
3.0
a)
b)
2
2.5
IF - Forward Current (A)
5
2
1.5
10
2.0
1.5
1.0
0.5
1
25
94 9313
0
0
25
0.5
Fig. 1 - Boards for RthJA Definition (Copper Overlay 35 µ)
10 000
PZSM - Non-Repetitive Surge Power
Dissipation (W)
Ptot - Total Power Dissipation (W)
3
RthJA = 25 K/W
2.5
2
1.5
RthJA = 100 K/W
1
0.5
0
0
25
50
75
100
125
1000
100
10
0.01
150
Tamb - Ambient Temperature (°C)
0.1
1
10
100
tp - Pulse Length (ms)
94 9582
Fig. 2 - Typ. Total Power Dissipation vs. Ambient Temperature
Zthp - Thermal Resistance for Pulse Cond. (K/W)
2.0
1.5
Fig. 3 - Forward Current vs. Forward Voltage
3.5
94 9580
1.0
VF - Forward Voltage (V)
94 9581
Fig. 4 - Non Repetitive Surge Power Dissipation vs.
Pulse Length
1000
100
tp/T = 0.5
10
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
1
10-5
94 9583
tp/T = 0.01
10-4
10-3
10-2
10-1
100
101
102
tp - Pulse Length (s)
Fig. 5 - Thermal Response
Rev. 1.0, 13-Oct-17
Document Number: 86139
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZG04-M-Series
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SMA (DO-214AC)
5.5 (0.217)
4.9 (0.193)
4.5 (0.176)
0.1 (0.004)
0.2 (0.008)
2.0 (0.078)
2.3 (0.090)
4.2 (0.164)
3.3 (0.130)
2.3 (0.090)
2.8 (0.109)
1.4 (0.055)
1.7 (0.066)
2.5 (0.098)
Foot print recommendation:
2.21 (0.087)
2.3 (0.091) max.
Document no.:S8-V-3848.01-003 (4)
Created - Date: 18.February.1997
Rev. 8 - Date: 10.November 2006
2.2 (0.087) max.
6.7 (0.264) ref.
19628
Rev. 1.0, 13-Oct-17
Document Number: 86139
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
1
Document Number: 91000