BZM55B12-TR

BZM55-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Saving space • Hermetic sealed parts • Electrical data identical with the devices BZT55..series, TZM..series • Fits onto SOD-323 • Very sharp reverse characteristic • Low reverse current level LINKS TO ADDITIONAL RESOURCES • Very high stability • Low noise 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D Models PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration APPLICATIONS • Voltage stabilization Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL BZM55-series BZM55-series-TR3 10 000 (8 mm tape on 13" reel) MINIMUM ORDER QUANTITY 10 000 BZM55-series BZM55-series-TR 2500 (8 mm tape on 7" reel) 12 500 PACKAGE PACKAGE NAME MicroMELF WEIGHT 12 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS Peak temperature max. 260°C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Junction to ambient air Junction tie point TEST CONDITION SYMBOL VALUE RthJA ≤ 300 K/W Ptot 500 mW Mounted on epoxy-glass hard tissue, fig. 1 RthJA 500 K/W 35 μm copper clad, 0.9 mm2 copper area per electrode RthJL 300 K/W Junction temperature Storage temperature range Zener current Forward voltage IF = 200 mA UNIT Tj 175 °C Tstg -65 to +175 °C IZ Ptot/VZ mA VF 1.5 V Rev. 2.2, 25-Nov-2021 Document Number: 85597 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZM55-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) VZ at IZT1 PART NUMBER TEST CURRENT IZT1 V IZT2 REVERSE LEAKAGE CURRENT IR at VR DYNAMIC RESISTANCE ZZ at IZT1 at Tamb = at Tamb = 25 °C 125 °C mA μA MIN. NOM. MAX. BZM55C2V4 2.28 2.4 2.56 5 1 < 50 BZM55C2V7 2.5 2.7 2.9 5 1 BZM55C3V0 2.8 3.0 3.2 5 1 TEMPERATURE COEFFICIENT ZZK at IZT2 TKVZ f = 1 kHz V Ω %/K MAX. MAX. MIN. MAX. < 100 1 < 85 < 600 - 0.09 - 0.06 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06