BZM55-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Saving space
• Hermetic sealed parts
• Electrical data identical with the devices
BZT55..series, TZM..series
• Fits onto SOD-323
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
2.4 to 75
V
Test current IZT
2.5; 5
mA
VZ specification
Pulse current
Int. construction
Single
• Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZM55-series
BZM55-series-TR3
10 000 (8 mm tape on 13" reel)
10 000
BZM55-series
BZM55-series-TR
2500 (8 mm tape on 7" reel)
12 500
PACKAGE
PACKAGE NAME
MicroMELF
WEIGHT
12 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Junction to ambient air
Junction tie point
TEST CONDITION
SYMBOL
VALUE
UNIT
RthJA 300 K/W
Ptot
500
mW
Mounted on epoxy-glass hard tissue, fig. 1
RthJA
500
K/W
35 μm copper clad, 0.9 mm2 copper area per
electrode
RthJL
300
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
IZ
Ptot/VZ
mA
VF
1.5
V
Junction temperature
Storage temperature range
Zener current
Forward voltage
Rev. 2.1, 25-Nov-11
IF = 200 mA
Document Number: 85597
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZM55-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
IR at VR
VZ at IZT1
PART NUMBER
IZT1
V
IZT2
DYNAMIC
RESISTANCE
ZZ at IZT1
at Tamb = at Tamb =
25 °C
125 °C
mA
μA
TEMPERATURE
COEFFICIENT
ZZK at IZT2
TKVZ
f = 1 kHz
V
%/K
MIN.
NOM.
MAX.
MAX.
MAX.
MIN.
BZM55C2V4
2.28
2.4
2.56
5
1
< 50
MAX.
BZM55C2V7
2.5
2.7
2.9
5
1
BZM55C3V0
2.8
3.0
3.2
5
1
BZM55C3V3
3.1
3.3
3.5
5
BZM55C3V6
3.4
3.6
3.8
5
BZM55C3V9
3.7
3.9
4.1
5
1
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