BZT52B6V2-G3-08

BZT52-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified available  (part number on request) DESIGN SUPPORT TOOLS click logo to get started • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V • Base P/N-G3 - green, commercial grade Models • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000/box 10 000 (8 mm tape on 13" reel) 10 000/box BZT52C2V4-G3-08 to BZT52C75-G3-08 BZT52B2V4-G3-08 to BZT52B75-G3-08 BZT52-G-series BZT52C2V4-G3-18 to BZT52C75-G3-18 BZT52B2V4-G3-18 to BZT52B75-G3-18 PACKAGE PACKAGE NAME SOD-123 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 9.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas Ptot 500 mW Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas Ptot 410 mW RthJA 300 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Power dissipation Zener current Thermal resistance junction to ambient air Junction temperature See Table “Electrical Characteristics” Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 22-Feb-18 Document Number: 83340 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMP. COEFFICIENT VR at IR ZZ at IZT1 ZZK at IZT2 VZ  10-4/°C V nA ADMISSIBLE ZENER CURRENT (4) IZ at Tamb = 45 °C IZ at Tamb = 25 °C mA MIN. NOM. MAX. BZT52C2V4-G Y1 2.2 2.4 2.6 5 1 - 100 85 600 -9 to -4 - - BZT52C2V7-G Y2 2.5 2.7 2.9 5 1 - 100 75 (< 83) < 500 -9 to -4 113 134 BZT52C3V0-G Y3 2.8 3.0 3.2 5 1 - 100 80 (< 95) < 500 -9 to -3 98 118 BZT52C3V3-G Y4 3.1 3.3 3.5 5 1 - 100 80 (< 95) < 500 -8 to -3 92 109 BZT52C3V6-G Y5 3.4 3.6 3.8 5 1 - 100 80 (< 95) < 500 -8 to -3 85 100 BZT52C3V9-G Y6 3.7 3.9 4.1 5 1 - 100 80 (< 95) < 500 -7 to -3 77 92 BZT52C4V3-G Y7 4 4.3 4.6 5 1 - 100 80 (< 95) < 500 -6 to -1 71 84 BZT52C4V7-G Y8 4.4 4.7 5 5 1 - 100 70 (< 78) < 500 -5 to +2 64 76 BZT52C5V1-G Y9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52C5V6-G YA 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52C6V2-G YB 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52C6V8-G YC 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52C7V5-G YD 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52C8V2-G YE 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52C9V1-G YF 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52C10-G YG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52C11-G YH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52C12-G YI 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52C13-G YK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52C15-G YL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52C16-G YM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52C18-G YN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52C20-G YO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52C22-G YP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52C24-G YR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52C27-G YS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52C30-G YT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52C33-G YU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52C36-G YW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52C39-G YX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52C43-G YY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52C47-G YZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C51-G Z1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C56-G Z2 52 56 60 2.5 1 - 100 < 135 (2) < 1000 (3) typ. +10 (2) - - < 1000 (3) BZT52C62-G Z3 58 62 66 2.5 1 - 100 < 150 (2) typ. +10 (2) - - BZT52C68-G Z4 64 68 72 2.5 1 - 100 < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52C75-G Z5 70 75 79 2.5 1 - 100 < 250 (2) < 1000 (3) typ. +10 (2) - - Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 22-Feb-18 Document Number: 83340 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMP. COEFFICIENT VR at IR ZZ at IZT1 ZZK at IZT2 VZ  10-4/°C V nA ADMISSIBLE ZENER CURRENT (4) IZ at Tamb = 45 °C IZ at Tamb = 25 °C mA MIN. NOM. MAX. BZT52B2V4-G V1 2.35 2.4 2.45 5 1 - 100 85 600 -9 to -4 - - BZT52B2V7-G V2 2.65 2.7 2.75 5 1 - 100 75 (< 83) < 500 -9 to -4 113 134 BZT52B3V0-G V3 2.94 3.0 3.06 5 1 - 100 80 (< 95) < 500 -9 to -3 98 118 BZT52B3V3-G V4 3.23 3.3 3.37 5 1 - 100 80 (< 95) < 500 -8 to -3 92 109 BZT52B3V6-G V5 3.53 3.6 3.67 5 1 - 100 80 (< 95) < 500 -8 to -3 85 100 BZT52B3V9-G V6 3.82 3.9 3.98 5 1 - 100 80 (< 95) < 500 -7 to -3 77 92 BZT52B4V3-G V7 4.21 4.3 4.39 5 1 - 100 80 (< 95) < 500 -6 to -1 71 84 BZT52B4V7-G V8 4.61 4.7 4.79 5 1 - 100 70 (< 78) < 500 -5 to +2 64 76 BZT52B5V1-G V9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52B5V6-G VA 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52B6V2-G VB 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52B6V8-G VC 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52B7V5-G VD 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52B8V2-G VE 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52B9V1-G VF 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52B10-G VG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52B11-G VH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52B12-G VI 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52B13-G VK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52B15-G VL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52B16-G VM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52B18-G VN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52B20-G VO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52B22-G VP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52B24-G VR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52B27-G VS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52B30-G VT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52B33-G VU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52B36-G VW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52B39-G VX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52B43-G VY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52B47-G VZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B51-G U1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B56-G U2 54.9 56 57.1 2.5 1 - 100 < 135 (2) < 1000 (3) typ. +10 (2) - - BZT52B62-G U3 60.8 62 63.2 2.5 1 - 100 < 150 (2) < 1000 (3) typ. +10 (2) - - BZT52B68-G U4 66.6 68 69.4 2.5 1 - 100 < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52B75-G U5 73.5 75 76.5 2.5 1 - 100 < 250 (2)) < 1500 (3) typ. +10 (2) - - Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 22-Feb-18 Document Number: 83340 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ω 100 mA 103 TJ = 25 °C 102 IF 5 4 10 rzj TJ = 100 °C 1 3 33 2 27 22 10 10-1 18 TJ = 25 °C -2 10 15 5 4 10-3 12 3 10 2 10-4 6.8/8.2 6.2 1 10-5 0 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward Characteristics Ω 103 mW 500 Tj = 25 °C 7 5 4 400 Rzj Ptot 3 2 300 47 + 51 43 39 36 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Tamb 18888 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 10 5.6 1 5 4 3 2 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current 5 4 3 negative 2 1 18121 2 positive 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.3, 22-Feb-18 Document Number: 83340 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 80 2 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 3 4 5 18122 0 0 100 V VZ Fig. 7 - Dynamic Resistance vs. Zener Voltage 60 40 80 100 V VZ at IZ = 2 mA Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 Δ VZ ΔTj 20 18136 V 9 20 8 IZ = 15 5 mA 1 mA 20 mA VZ at IZ = 5 mA 7 ΔVZ 51 6 5 10 43 4 36 3 5 2 1 0 0 -5 1 2 3 10 4 5 2 3 4 5 100 V VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA 18135 -1 0 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage IZ = 5 mA 20 40 60 80 18158 100 Tj 120 140 °C Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 25 0.7 VZ at IZ = 5 mA 10 0.6 Δ VZ V 1.6 15 0.5 8 0.4 1.2 ΔVZ 1.0 7 0.8 0.6 0.2 6.2 5.9 0.1 5.6 0.2 0.3 0 ΔVZ = rZth x IZ IZ = 5 mA VZ >= 56 V; IZ = 2.5 mA 1.4 0.4 0 5.1 - 0.2 -1 3.6 - 0.2 0 18124 20 40 60 80 4.7 100 120 140 C - 0.4 1 18159 10 VZ at IZ = 5 mA 100 V Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev. 1.3, 22-Feb-18 Document Number: 83340 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com V 5 Vishay Semiconductors mA 50 ΔVZ = rzth x IZ 4 Tj = 25 °C 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ Δ VZ 3 8.2 30 IZ = 5 mA 2 20 1 Test current IZ 5 mA 10 IZ = 2.5 mA 0 0 0 18160 20 40 60 100 V 80 0 VZ at IZ = 5 mA 18111 Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 30 lZ 1 2 3 4 5 6 7 8 9 10 V VZ Fig. 14 - Breakdown Characteristics 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 18112 10 20 30 40 V VZ Fig. 15 - Breakdown Characteristics 18157 Fig. 16 - Breakdown Characteristics Rev. 1.3, 22-Feb-18 Document Number: 83340 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.3, 22-Feb-18 Document Number: 83340 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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