BZT52C2V7-HE3-18

BZT52-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes Available • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified available DESIGN SUPPORT TOOLS • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V click logo to get started • Base P/N-E3 - RoHS-compliant, commercial grade Models • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration UNIT Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000/box 10 000 (8 mm tape on 13" reel) 10 000/box BZT52C2V4-E3-08 to BZT52C75-E3-08 BZT52B2V4-E3-08 to BZT52B75-E3-08 BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52-series BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52C2V4-E3-18 to BZT52C75-E3-18 BZT52B2V4-E3-18 to BZT52B75-E3-18 BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOD-123 10.3 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Zener current Thermal resistance junction to ambient air TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas Ptot 500 mW Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas Ptot 410 mW RthJA 300 K/W See table “Electrical Characteristics “ Valid provided that electrodes are kept at ambient temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Junction temperature Rev. 1.9, 20-Feb-18 Document Number: 85760 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE VR at IR V nA DYNAMIC RESISTANCE ZZ at IZT1 ZZK at IZT2  TEMP. COEFFICIENT ADMISSABLE ZENER CURRENT (4) VZ IZ at IZ at Tamb = 45 °C Tamb = 25 °C 10-4/°C mA MIN. NOM. MAX. BZT52C2V4 W1 2.2 2.4 2.6 5 1 - - 85 600 -9 to -4 - - BZT52C2V7 W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52C3V0 W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52C3V3 W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52C3V6 W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52C3V9 W6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52C4V3 W7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52C4V7 W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52C5V1 W9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52C5V6 WA 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52C6V2 WB 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52C6V8 WC 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52C7V5 WD 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52C8V2 WE 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52C9V1 WF 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52C10 WG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52C11 WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52C12 WI 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52C13 WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52C15 WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52C16 WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52C18 WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52C20 WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52C22 WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52C24 WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52C27 WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52C30 WT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52C33 WU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52C36 WW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52C39 WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52C43 WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52C47 WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C51 X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C56 X2 52 56 60 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) - - (2) 1000 (3) (2) BZT52C62 X3 58 62 66 2.5 0.5 - - < 150 - - BZT52C68 X4 64 68 72 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52C75 X5 70 75 79 2.5 0.5 Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature - < 250 (2) < 1500 (3) typ. +10 (2) - - < typ. +10 Rev. 1.9, 20-Feb-18 Document Number: 85760 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE VOLTAGE IZT2 VR at IR mA V nA DYNAMIC RESISTANCE ZZK at IZT2 ZZ at IZT1  TEMP. ADMISSABLE ZENER COEFFICIENT CURRENT (4) VZ IZ at IZ at Tamb = 45 °C Tamb = 25 °C 10-4/°C mA MIN. NOM. MAX. BZT52B2V4 W1 2.35 2.4 2.45 5 1 - - 85 600 -9 to -4 - - BZT52B2V7 W2 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52B3V0 W3 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52B3V3 W4 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52B3V6 W5 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52B3V9 W6 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52B4V3 W7 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52B4V7 W8 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52B5V1 W9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52B5V6 WA 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52B6V2 WB 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52B6V8 WC 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52B7V5 WD 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52B8V2 WE 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52B9V1 WF 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52B10 WG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52B11 WH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52B12 WI 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52B13 WK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52B15 WL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52B16 WM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52B18 WN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52B20 WO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52B22 WP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52B24 WR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52B27 WS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52B30 WT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52B33 WU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52B36 WW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52B39 WX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52B43 WY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52B47 WZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B51 X1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B56 X2 54.9 56 57.1 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) - - 150 (2) 1000 (3) (2) BZT52B62 X3 60.8 62 63.2 2.5 0.5 - - < - - BZT52B68 X4 66.6 68 69.4 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52B75 X5 73.5 75 76.5 2.5 0.5 - - < 250 (2) < 1500 (3) typ. +10 (2) - - < typ. +10 Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 20-Feb-18 Document Number: 85760 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ω 100 mA 103 TJ = 25 °C 102 IF 5 4 10 1 3 rzj TJ = 100 °C 33 2 27 22 10 10-1 18 TJ = 25 °C 10-2 15 5 4 10-3 12 3 10 2 10-4 6.8/8.2 6.2 1 -5 10 0 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward characteristics mW 500 Ω 103 Tj = 25 °C 7 5 4 400 Rzj Ptot 3 2 300 47 + 51 43 39 36 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Tamb 18888 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 5 4 3 2 10 5 4 3 negative 2 5.6 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current positive 1 1 18121 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.9, 20-Feb-18 Document Number: 85760 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 80 2 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 3 4 5 18122 0 0 100 V VZ Fig. 7 - Dynamic Resistance vs. Zener Voltage 60 40 100 V 80 VZ at IZ = 2 mA Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 Δ VZ ΔTj 20 18136 V 9 8 20 IZ = 15 VZ at IZ = 5 mA 7 5 mA 1 mA 20 mA ΔVZ 51 6 5 43 4 10 36 3 5 2 1 0 0 -1 0 -5 1 2 3 10 4 5 2 3 4 5 100 V 40 60 80 18158 100 Tj 120 140 °C VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA 18135 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 25 0.7 VZ at IZ = 5 mA V 1.6 15 0.5 1.2 ΔVZ 1.0 8 0.4 0.8 7 0.6 0.2 6.2 5.9 0.4 0.1 5.6 0.3 0 0.2 0 5.1 - 0.2 -1 3.6 - 0.2 0 18124 20 40 60 80 ΔVZ = rZth x IZ IZ = 5 mA VZ >= 56 V; IZ = 2.5 mA 1.4 10 0.6 Δ VZ IZ = 5 mA 20 - 0.4 4.7 100 120 140 C 1 18159 10 VZ at IZ = 5 mA 100 V Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev. 1.9, 20-Feb-18 Document Number: 85760 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com V 5 Vishay Semiconductors mA 50 ΔVZ = rzth x IZ 4 Tj = 25 °C 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ Δ VZ 3 8.2 30 IZ = 5 mA 2 20 1 Test current IZ 5 mA 10 IZ = 2.5 mA 0 0 0 20 40 60 80 100 V 0 VZ at IZ = 5 mA 18160 18111 Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 30 lZ 1 2 3 4 5 6 7 8 9 10 V VZ Fig. 14 - Breakdown Characteristics 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 18112 10 20 30 40 V VZ Fig. 15 - Breakdown Characteristics 18157 Fig. 16 - Breakdown Characteristics Rev. 1.9, 20-Feb-18 Document Number: 85760 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.9, 20-Feb-18 Document Number: 85760 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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