BZT52C4V7-HE3-08

 s b b b v b      BZT52-Series www.vishay.com Vishay Semiconductors (Tamb = 25 °C, unless otherwise specified) Ω 100 mA 103 TJ = 25 °C 102 IF 5 4 10 1 3 rzj TJ = 100 °C 33 2 27 22 10 10-1 18 TJ = 25 °C 10-2 15 5 4 10-3 12 3 10 2 10-4 6.8/8.2 6.2 1 -5 10 0 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward characteristics mW 500 Ω 103 Tj = 25 °C 7 5 4 400 Rzj Ptot 3 2 300 47 + 51 43 39 36 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Tamb 18888 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 5 4 3 2 10 5 4 3 negative 2 5.6 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current positive 1 1 18121 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.9, 20-Feb-18 Document Number: 85760 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 80 2 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 3 4 5 18122 0 0 100 V VZ Fig. 7 - Dynamic Resistance vs. Zener Voltage 60 40 100 V 80 VZ at IZ = 2 mA Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 Δ VZ ΔTj 20 18136 V 9 8 20 IZ = 15 VZ at IZ = 5 mA 7 5 mA 1 mA 20 mA ΔVZ 51 6 5 43 4 10 36 3 5 2 1 0 0 -1 0 -5 1 2 3 10 4 5 2 3 4 5 100 V 40 60 80 18158 100 Tj 120 140 °C VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA 18135 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 25 0.7 VZ at IZ = 5 mA V 1.6 15 0.5 1.2 ΔVZ 1.0 8 0.4 0.8 7 0.6 0.2 6.2 5.9 0.4 0.1 5.6 0.3 0 0.2 0 5.1 - 0.2 -1 3.6 - 0.2 0 18124 20 40 60 80 ΔVZ = rZth x IZ IZ = 5 mA VZ >= 56 V; IZ = 2.5 mA 1.4 10 0.6 Δ VZ IZ = 5 mA 20 - 0.4 4.7 100 120 140 C 1 18159 10 VZ at IZ = 5 mA 100 V Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev. 1.9, 20-Feb-18 Document Number: 85760 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com V 5 Vishay Semiconductors mA 50 ΔVZ = rzth x IZ 4 Tj = 25 °C 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ Δ VZ 3 8.2 30 IZ = 5 mA 2 20 1 Test current IZ 5 mA 10 IZ = 2.5 mA 0 0 0 20 40 60 80 100 V 0 VZ at IZ = 5 mA 18160 18111 Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 30 lZ 1 2 3 4 5 6 7 8 9 10 V VZ Fig. 14 - Breakdown Characteristics 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 18112 10 20 30 40 V VZ Fig. 15 - Breakdown Characteristics 18157 Fig. 16 - Breakdown Characteristics Rev. 1.9, 20-Feb-18 Document Number: 85760 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. in millimeters (inches): 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.9, 20-Feb-18 Document Number: 85760 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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