BZT52C62-G3-18

BZT52-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified available  (part number on request) DESIGN SUPPORT TOOLS click logo to get started • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V • Base P/N-G3 - green, commercial grade Models • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000/box 10 000 (8 mm tape on 13" reel) 10 000/box BZT52C2V4-G3-08 to BZT52C75-G3-08 BZT52B2V4-G3-08 to BZT52B75-G3-08 BZT52-G-series BZT52C2V4-G3-18 to BZT52C75-G3-18 BZT52B2V4-G3-18 to BZT52B75-G3-18 PACKAGE PACKAGE NAME SOD-123 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 9.4 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas Ptot 500 mW Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas Ptot 410 mW RthJA 300 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Power dissipation Zener current Thermal resistance junction to ambient air Junction temperature See Table “Electrical Characteristics” Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 22-Feb-18 Document Number: 83340 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMP. COEFFICIENT VR at IR ZZ at IZT1 ZZK at IZT2 VZ  10-4/°C V nA ADMISSIBLE ZENER CURRENT (4) IZ at Tamb = 45 °C IZ at Tamb = 25 °C mA MIN. NOM. MAX. BZT52C2V4-G Y1 2.2 2.4 2.6 5 1 - 100 85 600 -9 to -4 - - BZT52C2V7-G Y2 2.5 2.7 2.9 5 1 - 100 75 (< 83) < 500 -9 to -4 113 134 BZT52C3V0-G Y3 2.8 3.0 3.2 5 1 - 100 80 (< 95) < 500 -9 to -3 98 118 BZT52C3V3-G Y4 3.1 3.3 3.5 5 1 - 100 80 (< 95) < 500 -8 to -3 92 109 BZT52C3V6-G Y5 3.4 3.6 3.8 5 1 - 100 80 (< 95) < 500 -8 to -3 85 100 BZT52C3V9-G Y6 3.7 3.9 4.1 5 1 - 100 80 (< 95) < 500 -7 to -3 77 92 BZT52C4V3-G Y7 4 4.3 4.6 5 1 - 100 80 (< 95) < 500 -6 to -1 71 84 BZT52C4V7-G Y8 4.4 4.7 5 5 1 - 100 70 (< 78) < 500 -5 to +2 64 76 BZT52C5V1-G Y9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52C5V6-G YA 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52C6V2-G YB 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52C6V8-G YC 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52C7V5-G YD 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52C8V2-G YE 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52C9V1-G YF 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52C10-G YG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52C11-G YH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52C12-G YI 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52C13-G YK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52C15-G YL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52C16-G YM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52C18-G YN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52C20-G YO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52C22-G YP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52C24-G YR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52C27-G YS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52C30-G YT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52C33-G YU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52C36-G YW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52C39-G YX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52C43-G YY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52C47-G YZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C51-G Z1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C56-G Z2 52 56 60 2.5 1 - 100 < 135 (2) < 1000 (3) typ. +10 (2) - - < 1000 (3) BZT52C62-G Z3 58 62 66 2.5 1 - 100 < 150 (2) typ. +10 (2) - - BZT52C68-G Z4 64 68 72 2.5 1 - 100 < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52C75-G Z5 70 75 79 2.5 1 - 100 < 250 (2) < 1000 (3) typ. +10 (2) - - Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 22-Feb-18 Document Number: 83340 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMP. COEFFICIENT VR at IR ZZ at IZT1 ZZK at IZT2 VZ  10-4/°C V nA ADMISSIBLE ZENER CURRENT (4) IZ at Tamb = 45 °C IZ at Tamb = 25 °C mA MIN. NOM. MAX. BZT52B2V4-G V1 2.35 2.4 2.45 5 1 - 100 85 600 -9 to -4 - - BZT52B2V7-G V2 2.65 2.7 2.75 5 1 - 100 75 (< 83) < 500 -9 to -4 113 134 BZT52B3V0-G V3 2.94 3.0 3.06 5 1 - 100 80 (< 95) < 500 -9 to -3 98 118 BZT52B3V3-G V4 3.23 3.3 3.37 5 1 - 100 80 (< 95) < 500 -8 to -3 92 109 BZT52B3V6-G V5 3.53 3.6 3.67 5 1 - 100 80 (< 95) < 500 -8 to -3 85 100 BZT52B3V9-G V6 3.82 3.9 3.98 5 1 - 100 80 (< 95) < 500 -7 to -3 77 92 BZT52B4V3-G V7 4.21 4.3 4.39 5 1 - 100 80 (< 95) < 500 -6 to -1 71 84 BZT52B4V7-G V8 4.61 4.7 4.79 5 1 - 100 70 (< 78) < 500 -5 to +2 64 76 BZT52B5V1-G V9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52B5V6-G VA 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52B6V2-G VB 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52B6V8-G VC 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52B7V5-G VD 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52B8V2-G VE 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52B9V1-G VF 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52B10-G VG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52B11-G VH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52B12-G VI 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52B13-G VK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52B15-G VL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52B16-G VM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52B18-G VN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52B20-G VO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52B22-G VP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52B24-G VR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52B27-G VS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52B30-G VT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52B33-G VU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52B36-G VW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52B39-G VX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52B43-G VY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52B47-G VZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B51-G U1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B56-G U2 54.9 56 57.1 2.5 1 - 100 < 135 (2) < 1000 (3) typ. +10 (2) - - BZT52B62-G U3 60.8 62 63.2 2.5 1 - 100 < 150 (2) < 1000 (3) typ. +10 (2) - - BZT52B68-G U4 66.6 68 69.4 2.5 1 - 100 < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52B75-G U5 73.5 75 76.5 2.5 1 - 100 < 250 (2)) < 1500 (3) typ. +10 (2) - - Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.3, 22-Feb-18 Document Number: 83340 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000