BZT52C68-HE3-18

BZT52-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes Available • The Zener voltages are graded according to the international E24 standard • AEC-Q101 qualified available DESIGN SUPPORT TOOLS • ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V click logo to get started • Base P/N-E3 - RoHS-compliant, commercial grade Models • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration UNIT Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000/box 10 000 (8 mm tape on 13" reel) 10 000/box BZT52C2V4-E3-08 to BZT52C75-E3-08 BZT52B2V4-E3-08 to BZT52B75-E3-08 BZT52C2V4-HE3-08 to BZT52C75-HE3-08 BZT52-series BZT52B2V4-HE3-08 to BZT52B75-HE3-08 BZT52C2V4-E3-18 to BZT52C75-E3-18 BZT52B2V4-E3-18 to BZT52B75-E3-18 BZT52C2V4-HE3-18 to BZT52C75-HE3-18 BZT52B2V4-HE3-18 to BZT52B75-HE3-18 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOD-123 10.3 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation Zener current Thermal resistance junction to ambient air TEST CONDITION SYMBOL VALUE UNIT Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas Ptot 500 mW Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas Ptot 410 mW RthJA 300 K/W See table “Electrical Characteristics “ Valid provided that electrodes are kept at ambient temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Junction temperature Rev. 1.9, 20-Feb-18 Document Number: 85760 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE VR at IR V nA DYNAMIC RESISTANCE ZZ at IZT1 ZZK at IZT2  TEMP. COEFFICIENT ADMISSABLE ZENER CURRENT (4) VZ IZ at IZ at Tamb = 45 °C Tamb = 25 °C 10-4/°C mA MIN. NOM. MAX. BZT52C2V4 W1 2.2 2.4 2.6 5 1 - - 85 600 -9 to -4 - - BZT52C2V7 W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52C3V0 W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52C3V3 W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52C3V6 W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52C3V9 W6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52C4V3 W7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52C4V7 W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52C5V1 W9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52C5V6 WA 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52C6V2 WB 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52C6V8 WC 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52C7V5 WD 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52C8V2 WE 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52C9V1 WF 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52C10 WG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52C11 WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52C12 WI 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52C13 WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52C15 WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52C16 WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52C18 WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52C20 WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52C22 WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52C24 WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52C27 WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52C30 WT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52C33 WU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52C36 WW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52C39 WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52C43 WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52C47 WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C51 X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52C56 X2 52 56 60 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) - - (2) 1000 (3) (2) BZT52C62 X3 58 62 66 2.5 0.5 - - < 150 - - BZT52C68 X4 64 68 72 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52C75 X5 70 75 79 2.5 0.5 Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature - < 250 (2) < 1500 (3) typ. +10 (2) - - < typ. +10 Rev. 1.9, 20-Feb-18 Document Number: 85760 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE VOLTAGE IZT2 VR at IR mA V nA DYNAMIC RESISTANCE ZZK at IZT2 ZZ at IZT1  TEMP. ADMISSABLE ZENER COEFFICIENT CURRENT (4) VZ IZ at IZ at Tamb = 45 °C Tamb = 25 °C 10-4/°C mA MIN. NOM. MAX. BZT52B2V4 W1 2.35 2.4 2.45 5 1 - - 85 600 -9 to -4 - - BZT52B2V7 W2 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 to -4 113 134 BZT52B3V0 W3 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 to -3 98 118 BZT52B3V3 W4 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 to -3 92 109 BZT52B3V6 W5 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 to -3 85 100 BZT52B3V9 W6 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 to -3 77 92 BZT52B4V3 W7 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 to -1 71 84 BZT52B4V7 W8 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 to +2 64 76 BZT52B5V1 W9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67 BZT52B5V6 WA 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 to +6 50 59 BZT52B6V2 WB 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 to +7 45 54 BZT52B6V8 WC 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 +2 to +7 41 49 BZT52B7V5 WD 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 +3 to +7 37 44 BZT52B8V2 WE 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 +4 to +7 34 40 BZT52B9V1 WF 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 +5 to +8 30 36 BZT52B10 WG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33 BZT52B11 WH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30 BZT52B12 WI 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 +6 to +9 23 28 BZT52B13 WK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25 BZT52B15 WL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23 BZT52B16 WM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20 BZT52B18 WN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18 BZT52B20 WO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17 BZT52B22 WP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16 BZT52B24 WR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13 BZT52B27 WS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12 BZT52B30 WT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10 BZT52B33 WU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9 BZT52B36 WW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9 BZT52B39 WX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8 BZT52B43 WY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7 BZT52B47 WZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B51 X1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6 BZT52B56 X2 54.9 56 57.1 2.5 0.5 - - < 135 (2) < 1000 (3) typ. +10 (2) - - 150 (2) 1000 (3) (2) BZT52B62 X3 60.8 62 63.2 2.5 0.5 - - < - - BZT52B68 X4 66.6 68 69.4 2.5 0.5 - - < 200 (2) < 1000 (3) typ. +10 (2) - - BZT52B75 X5 73.5 75 76.5 2.5 0.5 - - < 250 (2) < 1500 (3) typ. +10 (2) - - < typ. +10 Notes • IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses t = 5 ms p (2) I ZT1 = 2.5 mA (3) I ZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 20-Feb-18 Document Number: 85760 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ω 100 mA 103 TJ = 25 °C 102 IF 5 4 10 1 3 rzj TJ = 100 °C 33 2 27 22 10 10-1 18 TJ = 25 °C 10-2 15 5 4 10-3 12 3 10 2 10-4 6.8/8.2 6.2 1 -5 10 0 0.2 0.4 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward characteristics mW 500 Ω 103 Tj = 25 °C 7 5 4 400 Rzj Ptot 3 2 300 47 + 51 43 39 36 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Tamb 18888 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 5 4 3 2 10 5 4 3 negative 2 5.6 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current positive 1 1 18121 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.9, 20-Feb-18 Document Number: 85760 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 80 2 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 3 4 5 18122 0 0 100 V VZ Fig. 7 - Dynamic Resistance vs. Zener Voltage 60 40 100 V 80 VZ at IZ = 2 mA Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 Δ VZ ΔTj 20 18136 V 9 8 20 IZ = 15 VZ at IZ = 5 mA 7 5 mA 1 mA 20 mA ΔVZ 51 6 5 43 4 10 36 3 5 2 1 0 0 -1 0 -5 1 2 3 10 4 5 2 3 4 5 100 V 40 60 80 18158 100 Tj 120 140 °C VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA 18135 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 25 0.7 VZ at IZ = 5 mA V 1.6 15 0.5 1.2 ΔVZ 1.0 8 0.4 0.8 7 0.6 0.2 6.2 5.9 0.4 0.1 5.6 0.3 0 0.2 0 5.1 - 0.2 -1 3.6 - 0.2 0 18124 20 40 60 80 ΔVZ = rZth x IZ IZ = 5 mA VZ >= 56 V; IZ = 2.5 mA 1.4 10 0.6 Δ VZ IZ = 5 mA 20 - 0.4 4.7 100 120 140 C 1 18159 10 VZ at IZ = 5 mA 100 V Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev. 1.9, 20-Feb-18 Document Number: 85760 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZT52-Series www.vishay.com V 5 Vishay Semiconductors mA 50 ΔVZ = rzth x IZ 4 Tj = 25 °C 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ Δ VZ 3 8.2 30 IZ = 5 mA 2 20 1 Test current IZ 5 mA 10 IZ = 2.5 mA 0 0 0 20 40 60 80 100 V 0 VZ at IZ = 5 mA 18160 18111 Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 30 lZ 1 2 3 4 5 6 7 8 9 10 V VZ Fig. 14 - Breakdown Characteristics 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 18112 10 20 30 40 V VZ Fig. 15 - Breakdown Characteristics 18157 Fig. 16 - Breakdown Characteristics Rev. 1.9, 20-Feb-18 Document Number: 85760 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000