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BZX55C33-TAP

BZX55C33-TAP

  • 厂商:

    TFUNK(威世)

  • 封装:

    DO-35(DO-204AH)

  • 描述:

    DIODE ZENER 33V 500MW DO35

  • 数据手册
  • 价格&库存
BZX55C33-TAP 数据手册
BZX55-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS LINKS TO ADDITIONAL RESOURCES • Voltage stabilization 3D 3D 3D Models PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2.5; 5 mA VZ specification Pulse current Circuit configuration Single ORDERING INFORMATION ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZX55-series DEVICE NAME BZX55-series-TR 10 000 per 13" reel 30 000/box BZX55-series BZX55-series-TAP 10 000 per ammopack (52 mm tape) 30 000/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS DO-35 (DO-204AH) 125 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = 25 °C Ptot 500 mW IZ Ptot/VZ mA l = 4 mm, TL = constant RthJA 300 K/W Tj 175 °C Tstg -65 to +175 °C VF 1.5 V Zener current Junction to ambient air Junction temperature Storage temperature range Forward voltage (max.) IF = 200 mA Rev. 1.8, 25-Nov-2021 Document Number: 85604 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX55-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT REVERSE LEAKAGE CURRENT IR at VR VZ at IZT1 PART NUMBER IZT1 V BZX55C2V4 IZT2 NOM. MAX. 2.28 2.4 2.56 5 ZZ at IZT1 Tamb = Tamb = 25 °C 150 °C mA MIN. DYNAMIC RESISTANCE μA 1 < 50 ZZK at IZT2 TKVZ f = 1 kHz Ω V < 100 TEMPERATURE COEFFICIENT 1 %/K MAX. MAX. MIN. MAX. < 85 < 600 - 0.09 - 0.06 BZX55C2V7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06 BZX55C3V0 2.8 3.0 3.2 5 1
BZX55C33-TAP 价格&库存

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