BZX55F27-TR

BZX55C... Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Order Instruction Type BZX55C2V4 Ordering Code BZX55C2V4–TAP Remarks Ammopack Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions l=4 mm, TL=25 °C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4 mm, TL=constant Symbol RthJA Value 300 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Document Number 85605 Rev. 5, 12-Mar-01 Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V www.vishay.com 1 (6) BZX55C... Vishay Semiconductors Type BZX55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 VZnom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 IZT for VZT and rzjT V 1) 2.28 to 2.56 < 85 2.5 to 2.9 < 85 2.8 to 3.2 < 85 3.1 to 3.5 < 85 3.4 to 3.8 < 85 3.7 to 4.1 < 85 4.0 to 4.6 < 75 4.4 to 5.0 < 60 4.8 to 5.4 < 35 5.2 to 6.0