BZX84C24-G3-08

BZX84-G-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar Zener diodes 3 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C” in the ordering code. Replace “C” with “B” for ± 2 % tolerance. 2 1 20421 DESIGN SUPPORT TOOLS • AEC-Q101 qualified available  (part number on request) click logo to get started • ESD capability acc. to AEC-Q101: human body model: > 8 kV, machine model: > 800 V Models Available • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 75 V Test current IZT 2; 5 mA VZ specification Pulse current Circuit configuration  Single ORDERING INFORMATION DEVICE NAME ORDERING CODE BZX84C2V4-G3-08 to BZX84C75-G3-08 BZX84-G-series BZX84B2V4-G3-08 to BZX84B75-G3-08 BZX84C2V4-G3-18 to BZX84C75-G3-18 BZX84B2V4-G3-18 to BZX84B75-G3-18 TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 3000 (8 mm tape on 7" reel) 15 000 10 000 (8 mm tape on 13" reel) 10 000 PACKAGE PACKAGE NAME SOT-23 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS 8.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 Ptot 300 mW Thermal resistance junction to ambient air Tamb = 25 °C, device on fiberglass substrate, acc. layout on page 7 RthJA 420 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Junction temperature Rev. 1.3, 20-Feb-18 Document Number: 83458 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA MIN. NOM. MAX. REVERSE LEAKAGE CURRENT IR at VR μA DYNAMIC RESISTANCE ZZK at IZT2 ZZ at IZT1 TEMPERATURE COEFFICIENT VZ at IZT1  V 10-4/°C MAX. MAX. MIN. MAX. -4 BZX84C2V4-G G50 2.2 2.4 2.6 5 1 50 1 100 275 -9 BZX84C2V7-G G51 2.5 2.7 2.9 5 1 20 1 100 600 -9 -4 BZX84C3V0-G G52 2.8 3.0 3.2 5 1 10 1 95 600 -9 -3 BZX84C3V3-G G53 3.1 3.3 3.5 5 1 5 1 95 600 -8 -3 BZX84C3V6-G G54 3.4 3.6 3.8 5 1 5 1 90 600 -8 -3 BZX84C3V9-G G55 3.7 3.9 4.1 5 1 3 1 90 600 -7 -3 BZX84C4V3-G G56 4.0 4.3 4.6 5 1 3 1 90 600 -6 -1 BZX84C4V7-G G57 4.4 4.7 5.0 5 1 3 2 80 500 -5 2 BZX84C5V1-G G58 4.8 5.1 5.4 5 1 2 2 60 480 -3 4 BZX84C5V6-G G59 5.2 5.6 6.0 5 1 1 2 40 400 -2 6 BZX84C6V2-G G60 5.8 6.2 6.6 5 1 3 4 10 150 -1 7 BZX84C6V8-G G61 6.4 6.8 7.2 5 1 2 4 15 80 2 7 BZX84C7V5-G G62 7.0 7.5 7.9 5 1 1 5 15 80 3 7 BZX84C8V2-G G63 7.7 8.2 8.7 5 1 0.7 5 15 80 4 7 BZX84C9V1-G G64 8.5 9.1 9.6 5 1 0.5 6 15 100 5 8 BZX84C10-G G65 9.4 10 10.6 5 1 0.2 7 20 150 5 8 BZX84C11-G G66 10.4 11 11.6 5 1 0.1 8 20 150 5 9 BZX84C12-G G67 11.4 12 12.7 5 1 0.1 8 25 150 6 9 BZX84C13-G G68 12.4 13 14.1 5 1 0.1 8 30 170 7 9 BZX84C15-G G69 13.8 15 15.6 5 1 0.05 10.5 30 200 7 9 BZX84C16-G G70 15.3 16 17.1 5 1 0.05 11.2 40 200 8 9.5 BZX84C18-G G71 16.8 18 19.1 5 1 0.05 12.6 45 225 8 9.5 BZX84C20-G G72 18.8 20 21.2 5 1 0.05 14.0 55 225 8 10 BZX84C22-G G73 20.8 22 23.3 5 1 0.05 15.4 55 250 8 10 BZX84C24-G G74 22.8 24 25.6 5 1 0.05 16.8 70 250 8 10 BZX84C27-G G75 25.1 27 28.9 2 0.5 0.05 18.9 80 300 8 10 BZX84C30-G G76 28 30 32 2 0.5 0.05 21.0 80 300 8 10 BZX84C33-G G77 31 33 35 2 0.5 0.05 23.1 80 325 8 10 BZX84C36-G G78 34 36 38 2 0.5 0.05 25.2 90 350 8 10 BZX84C39-G G79 37 39 41 2 0.5 0.05 27.3 130 350 10 12 BZX84C43-G G80 40 43 46 2 0.5 0.05 30.1 150 375 10 12 BZX84C47-G G81 44 47 50 2 0.5 0.05 32.9 170 375 10 12 BZX84C51-G G82 48 51 54 2 0.5 0.05 35.7 180 400 10 12 BZX84C56-G G83 52 56 60 2 0.5 0.05 39.2 200 425 9 11 BZX84C62-G G84 58 62 66 2 0.5 0.05 43.4 215 450 9 12 BZX84C68-G G85 64 68 72 2 0.5 0.05 47.6 240 475 10 12 BZX84C75-G G86 70 75 79 2 0.5 0.05 52.5 255 500 10 12 Rev. 1.3, 20-Feb-18 Document Number: 83458 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V REVERSE LEAKAGE CURRENT IZT2 mA IR at VR DYNAMIC RESISTANCE ZZK at IZT2 ZZ at IZT1 μA V TEMPERATURE COEFFICIENT VZ at IZT1  10-4/°C MIN. NOM. MAX. MAX. MAX. MIN. MAX. BZX84B2V4-G H50 2.35 2.4 2.45 5 1 50 1 100 275 -9 -4 BZX84B2V7-G H51 2.65 2.7 2.75 5 1 20 1 100 600 -9 -4 BZX84B3V0-G H52 2.94 3.0 3.06 5 1 10 1 95 600 -9 -3 BZX84B3V3-G H53 3.23 3.3 3.37 5 1 5 1 95 600 -8 -3 BZX84B3V6-G H54 3.53 3.6 3.67 5 1 5 1 90 600 -8 -3 BZX84B3V9-G H55 3.82 3.9 3.98 5 1 3 1 90 600 -7 -3 BZX84B4V3-G H56 4.21 4.3 4.39 5 1 3 1 90 600 -6 -1 BZX84B4V7-G H57 4.61 4.7 4.79 5 1 3 2 80 500 -5 2 BZX84B5V1-G H58 5.0 5.1 5.2 5 1 2 2 60 480 -3 4 BZX84B5V6-G H59 5.49 5.6 5.71 5 1 1 2 40 400 -2 6 BZX84B6V2-G H60 6.08 6.2 6.32 5 1 3 4 10 150 -1 7 BZX84B6V8-G H61 6.66 6.8 6.94 5 1 2 4 15 80 2 7 BZX84B7V5-G H62 7.35 7.5 7.65 5 1 1 5 15 80 3 7 BZX84B8V2-G H63 8.04 8.2 8.36 5 1 0.7 5 15 80 4 7 BZX84B9V1-G H64 8.92 9.1 9.28 5 1 0.5 6 15 100 5 8 BZX84B10-G H65 9.8 10 10.2 5 1 0.2 7 20 150 5 8 BZX84B11-G H66 10.8 11 11.2 5 1 0.1 8 20 150 5 9 BZX84B12-G H67 11.8 12 12.2 5 1 0.1 8 25 150 6 9 BZX84B13-G H68 12.7 13 13.3 5 1 0.1 8 30 170 7 9 BZX84B15-G H69 14.7 15 15.3 5 1 0.05 10.5 30 200 7 9 BZX84B16-G H70 15.7 16 16.3 5 1 0.05 11.2 40 200 8 9.5 BZX84B18-G H71 17.6 18 18.4 5 1 0.05 12.6 45 225 8 9.5 BZX84B20-G H72 19.6 20 20.4 5 1 0.05 14 55 225 8 10 BZX84B22-G H73 21.6 22 22.4 5 1 0.05 15.4 55 250 8 10 BZX84B24-G H74 23.5 24 24.5 5 1 0.05 16.8 70 250 8 10 BZX84B27-G H75 26.5 27 27.5 2 0.5 0.05 18.9 80 300 8 10 BZX84B30-G H76 29.4 30 30.6 2 0.5 0.05 21 80 300 8 10 BZX84B33-G H77 32.3 33 33.7 2 0.5 0.05 23.1 80 325 8 10 BZX84B36-G H78 35.3 36 36.7 2 0.5 0.05 25.2 90 350 8 10 BZX84B39-G H79 38.2 39 39.8 2 0.5 0.05 27.3 130 350 10 12 BZX84B43-G H80 42.1 43 43.9 2 0.5 0.05 30.1 150 375 10 12 BZX84B47-G H81 46.1 47 47.9 2 0.5 0.05 32.9 170 375 10 12 BZX84B51-G H82 50 51 52 2 0.5 0.05 35.7 180 400 10 12 BZX84B56-G H83 54.9 56 57.1 2 0.5 0.05 39.2 200 425 9 11 BZX84B62-G H84 60.8 62 63.2 2 0.5 0.05 43.4 215 450 9 12 BZX84B68-G H85 66.6 68 69.4 2 0.5 0.05 47.6 240 475 10 12 BZX84B75-G H86 73.5 75 76.5 2 0.5 0.05 52.5 255 500 10 12 Rev. 1.3, 20-Feb-18 Document Number: 83458 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 Ω 100 TJ = 25 °C 102 IF 5 4 10 1 3 rzj TJ = 100 °C 10-1 33 2 27 22 10 TJ = 25 °C 18 -2 10 15 5 4 -3 10 12 3 10 10-4 2 10-5 0 1 0.2 0.4 0.6 0.8 1V VF 18114 6.8/8.2 6.2 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward Characteristics Ω 103 mW 500 Tj = 25 °C 7 5 4 400 Rzj 47 + 51 43 39 36 3 Ptot 2 300 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Tamb 18115 Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 10 5.6 1 5 4 3 2 1 0.1 18117 2 5 1 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current 5 4 3 negative 2 1 18121 2 positive 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.3, 20-Feb-18 Document Number: 83458 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZX84-G-Series www.vishay.com Vishay Semiconductors Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 2 80 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 18122 3 4 5 0 0 100 V VZ 20 60 40 Fig. 7 - Dynamic Resistance vs. Zener Voltage 80 100 V VZ 18125 Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 V 9 20 7 8 Δ VZ ΔTj 5 mA IZ = 1 mA 20 mA 15 Δ VZ 51 6 5 43 4 10 36 3 5 2 1 0 0 -5 1 2 3 4 5 10 2 100 V 3 4 5 0 VZ 18123 25 0.7 VZ at IZ = 5 mA 40 60 80 100 120 Tj 140 °C Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 20 18126 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage V 1.6 15 1.2 Δ VZ 0.5 8 0.4 7 0.3 0.2 6.2 5.9 0.1 5.6 0 ΔVZ = Rzth x IZ 1.4 10 0.6 Δ VZ IZ = 2 mA -1 1 0.8 0.6 0.4 0.2 0 5.1 -1 - 0.2 3.6 - 0.2 0 18124 20 40 60 80 4.7 100 120 140 C Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature - 0.4 18127 1 2 3 4 5 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev. 1.3, 20-Feb-18 Document Number: 83458 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000