CNY17-1.

Alternative Device Available, Use CNY17 CNY17., CNY17G www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage 5000 VRMS A 1 6 B C 2 5 C NC 3 4 E • Long term stability • Industry standard dual-in-line package • VIORM = 850 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 i179004-4 V D E AGENCY APPROVALS • UL file no. E52744 • cUL tested to CSA 22.2 bulletin 5A 17201_4 • DIN EN 60747-5-5 (0884-5) available with option 1 DESCRIPTION • BSI IEC 60950-1:2006 IEC 60065 The CNY17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. • FIMKO • CQC Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. ORDERING INFORMATION C N Y 1 7 - PART NUMBER AGENCY CERTIFIED/PACKAGE cUL, VDE, BSI, FIMKO, CQC DIP-6 DIP-6, 400 mil 7.62 mm 10.16 mm # CTR (%) 40 to 80 63 to 125 100 to 200 DIP-6 CNY17-1. CNY17-2. CNY17-3. 160 to 320 CNY17-4. DIP-6, 400 mil CNY17G-1 CNY17G-2 CNY17G-3 CNY17G-4 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 60 mA Surge current t ≤ 10 μs IFSM 3 A Pdiss 100 mW Collector emitter breakdown voltage BVCEO 70 V Emitter base breakdown voltage BVEBO 7 V mA Power dissipation OUTPUT Collector current Power dissipation t < 1 ms IC 50 IC 100 mA Pdiss 150 mW Document Number: 81863 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 17-Feb-14 Alternative Device Available, Use CNY17 CNY17., CNY17G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT t = 1 min VISO 5000 VRMS Creepage distance (CNY17.) ≥7 mm Clearance distance (CNY17.) ≥7 mm Creepage distance (CNY17G) ≥8 mm Clearance distance (CNY17G) ≥8 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 250 COUPLER Isolation test voltage between emitter and detector referred to climate DIN 50014, part 2, Nov. 74 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Tstg - 55 to + 125 °C Tamb - 55 to + 100 °C Tsld 260 °C Storage temperature Operating temperature Soldering temperature (1) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Ω Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.25 1.65 V 0.01 10 μA INPUT Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 μA VBR VR = 6 V IR Reverse current Capacitance VR = 0 V, f = 1 MHz Thermal resistance 6 V CO 25 pF Rth 750 K/W OUTPUT Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 5.2 pF Collector base capacitance VCB = 5 V, f = 1 MHz CCB 6.5 pF Emitter base capacitance VEB = 5 V, f = 1 MHz CEB 7.5 pF Rth 500 K/W VCEsat 0.25 CC 0.6 CNY17-1 ICEO 2 50 CNY17-2 ICEO 2 50 nA CNY17-3 ICEO 5 100 nA CNY17-4 ICEO 5 100 nA Thermal resistance COUPLER Collector emitter, saturation voltage IF = 10 mA, IC = 2.5 mA Coupling capacitance Collector emitter, leakage current VCE = 10 V 0.4 V pF nA Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 81863 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 17-Feb-14 Alternative Device Available, Use CNY17 CNY17., CNY17G www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 1 mA PART SYMBOL MIN. MAX. UNIT CNY17-1 CTR 40 TYP. 80 % CNY17-2 CTR 63 125 % CNY17-3 CTR 100 200 % CNY17-4 CTR 160 320 CNY17-1 CTR 13 30 % CNY17-2 CTR 22 45 % CNY17-3 CTR 34 70 % CNY17-4 CTR 56 90 % % Note • Current transfer ratio and collector-emitter leakage current by dash number (Tamb °C). SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (WITHOUT SATURATION) Turn-on time IF = 10 mA, VCC = 5 V, RL = 75 Ω ton 3 Rise time IF = 10 mA, VCC = 5 V, RL = 75 Ω tr 2 μs Turn-off time IF = 10 mA, VCC = 5 V, RL = 75 Ω toff 2.3 μs μs Fall time IF = 10 mA, VCC = 5 V, RL = 75 Ω tf 2 μs Cut-off frequency IF = 10 mA, VCC = 5 V, RL = 75 Ω fCO 250 kHz ton 3 μs CNY17-2 ton 4.2 μs CNY17-3 ton 4.2 μs IF = 5 mA CNY17-4 ton 6 μs IF = 20 mA CNY17-1 tr 2 μs CNY17-2 tr 3 μs CNY17-3 tr 3 μs IF = 5 mA CNY17-4 tr 4.6 μs IF = 20 mA CNY17-1 toff 18 μs CNY17-2 toff 23 μs CNY17-3 toff 23 μs IF = 5 mA CNY17-4 toff 25 μs IF = 20 mA CNY17-1 tf 11 μs CNY17-2 tf 14 μs CNY17-3 tf 14 μs CNY17-4 tf 15 μs SWITCHING OPERATION (WITH SATURATION) IF = 20 mA Turn-on time Rise time Turn-off time Fall time IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 5 mA CNY17-1 Document Number: 81863 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 17-Feb-14 Alternative Device Available, Use CNY17 CNY17., CNY17G www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 (TA = 0 °C, VCE = 5 V) IC/IF = f (IF) V CC = 5 V IC IC (%) IF R L = 75 Ω IF 47 Ω 100 1 2 3 4 10 1 icny17_01 0.1 icny17_04 Fig. 1 - Linear Operation (without Saturation) 1 10 IF (mA) Fig. 3 - Current Transfer Ratio vs. Diode Current 1000 IF (TA = 25 °C, VCE = 5 V) IC/IF = f (IF) V CC = 5 V IC (%) IF 1 kΩ 100 1 2 3 4 10 47 Ω 1 0.1 icny17_02 icny17_05 Fig. 1 - Switching Operation (with Saturation) 10 Fig. 4 - Current Transfer Ratio vs. Diode Current 1000 1000 (TA = - 25 °C, VCE = 5 V) IC/IF = f (IF) (TA = 50 °C, VCE = 5 V) IC/IF = f (IF) 100 IC (%) IF IC (%) IF 1 IF (mA) 1 2 3 4 10 100 1 2 3 4 10 1 1 0.1 icny17_03 1 10 IF (mA) Fig. 2 - Current Transfer Ratio vs. Diode Current 0.1 icny17_06 1 10 IF (mA) Fig. 5 - Current Transfer Ratio vs. Diode Current Document Number: 81863 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 17-Feb-14 Alternative Device Available, Use CNY17 CNY17., CNY17G www.vishay.com Vishay Semiconductors 40 1000 IC = f (VCE) 30 IF = 14 mA 100 IC IC (%) IF (TA = 75 °C, VCE = 5 V) IC/IF = f (IF) 1 2 3 4 10 IF = 12 mA 20 IF =10 mA IF = 7 mA 10 IF = 5 mA IF = 1 mA 1 0 0.1 1 0 10 5 Fig. 6 - Current Transfer Ratio vs. Diode Current 15 Fig. 9 - Output Characteristics 1000 1.2 VF = f (IF) (IF = 10 mA, VCE = 5 V) IC/IF = f (T) 25 °C 50 °C 75 °C 4 1.1 3 2 100 VF (V) IC (%) IF 10 VCE (V) icny17_10 IF (mA) icny17_07 1 10 - 25 1.0 0.9 0 25 50 TA (°C) icny17_08 0.1 75 1 10 100 IF (mA) icny17_11 Fig. 7 - Current Transfer Ratio (CTR) vs. Temperature Fig. 10 - Forward Voltage vs. Forward Current 30 1 IC = f (VCE) IF = 0 VCE = 35 V IB = 40 µA 20 15 IB = 20 µA 10 IB = 15 µA ICEO (µA) 25 IC (mA) IF = 2 mA ICEO = f (V,T) (IF = 0) 0.1 VCE = 12 V 0.01 IB = 10 µA 5 0 IB = 5 µA IB = 2 µA 0.001 0 icny17_09 5 10 VCE (V) Fig. 8 - Transistor Characteristics 15 0 icny17_12 25 50 75 °C TA 100 Fig. 11 - Leakage Current vs. Ambient Temperature Document Number: 81863 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 17-Feb-14 Alternative Device Available, Use CNY17 CNY17., CNY17G www.vishay.com Vishay Semiconductors 1.0 1.0 VCEsat = f (IC) 0.9 0.9 0.7 0.7 VCE sat (V) IF = 3 x IC VCE sat 0.6 0.5 0.4 0.6 0.4 0.3 0.2 0.2 0.1 0.1 0 1 10 IF = 2 x IC IF = 3 x IC 1 100 IC (mA) icny17_13 IF = IC 0.5 0.3 0 10 100 IC (mA) icny17_16 Fig. 12 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-1 Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-4 200 1.0 Ptot = f (TA) 0.9 VCEsat = f (IC) 0.8 150 Ptot (mW) 0.7 VCE sat (V) VCEsat = f (IC) 0.8 0.8 0.6 0.5 IF = 2 x IC 0.4 Transistor 100 Diode 0.3 IF = 3 x IC 0.2 50 0.1 0 0 1 10 100 IC (mA) icny17_14 0 icny17_18 Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-2 25 50 75 100 TA (°C) Fig. 16 - Permissible Power Dissipation for Transistor and Diode 1.0 0.9 VCEsat = f (IC) 0.8 VCE sat (V) 0.7 IF = IC 0.6 0.5 0.4 0.3 IF = 2 x IC 0.2 0.1 IF = 3 x IC 0 1 icny17_15 10 100 IC (mA) Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17-3 Document Number: 81863 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.6, 17-Feb-14 Alternative Device Available, Use CNY17 CNY17., CNY17G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters DIP-6 6.5 ± 0.3 7.12 ± 0.3 7.62 typ. 1.2 ± 0.1 0.35 ± 0.1 3.5 ± 0.3 4.5 ± 0.3 2.8 ± 0.5 0.5 ± 0.1 2.54 typ. 0° to 15° 0.25 7.62 to 9.50 DIP-6, 400 mil 6.5 ± 0.3 7.12 ± 0.3 7.62 typ. 1.2 ± 0.1 0.25 ± 0.1 4.5 ± 0.3 0.25 0.5 ± 0.1 10.16 typ. 2.54 typ. PACKAGE MARKING CNY17-3 V YWW 24 Document Number: 81863 7 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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