CNY64A

CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak Top View CNY64 A C • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303 / IEC 60112 comparative tracking index: CTI ≥ 200 CNY65 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 C E VDE STANDARDS These couplers perform safety functions according to the following equipment standards: CNY66 17187-4 • DIN EN 60747-5-5 (VDE 0884-5) Optocoupler for electrical safety requirements LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Models Related Documents • IEC 60950/EN 60950 Office machines Footprints DESCRIPTION The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated household apparatus electronic and related The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. • VDE 0700/IEC 60335 Household equipment APPLICATIONS • VDE 0160 Electronic equipment for electrical power installation Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • VDE 0750/IEC60601 Medical equipment • for appl. class I to IV at mains voltage ≤ 300 V AGENCY APPROVALS • for appl. class I to IV at mains voltage ≤ 600 V • for appl. class I to III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5 (VDE 0884-5), suitable for: • UL / cUL 1577 • DIN EN 60747-5-5 (VDE 0884-5) - Switch-mode power supplies - Line receiver - Computer peripheral interface - Microprocessor system interface ORDERING INFORMATION DIP, 400 mil C N Y PART NUMBER 6 # x PACKAGE OPTION CTR BIN AGENCY CERTIFIED / PACKAGE UL, cUL, VDE 10.16 mm DIP, 600 mil 15.24 mm DIP, 700 mil 17.8 mm CTR (%) 50 to 300 63 to 125 100 to 200 DIP-4 HV, 400 mil, high isolation distance CNY64 CNY64A CNY64B DIP-4 HV, 600 mil, high isolation distance CNY65 CNY65A CNY65B DIP-4 HV, 700 mil, high isolation distance CNY66 - CNY66B Document Number: 83540 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 75 mA Forward surge current tp ≤ 10 μs IFSM 1.5 A Pdiss 120 mW Tj 100 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current Collector peak current IC 50 ICM 100 mA Pdiss 130 mW Tj 100 °C mW tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature COUPLER Total power dissipation Ptot 250 Ambient temperature range Tamb -55 to +85 °C Storage temperature range Tstg -55 to +100 °C Tsld 260 °C Soldering temperature 2 mm from case, ≤ 10 s Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 1.25 1.6 V VR = 0, f = 1 MHz Cj - 50 Collector emitter voltage IC = 1 mA VCEO 32 - - V Emitter collector voltage IE = 100 μA VECO 7 - - V VCE = 20 V, IF = 0 A ICEO - - 200 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc - 110 - kHz f = 1 MHz Ck - 0.3 - pF input Forward voltage Junction capacitance pF output Collector emitter leakage current coupler Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements Document Number: 83540 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF PART SYMBOL MIN. TYP. MAX. UNIT CNY64, CNY65, CNY66 CTR 50 - 300 % CNY64A CTR 63 - 125 % CNY65A CTR 63 - 125 % CNY64B CTR 100 - 200 % CNY65B CTR 100 - 200 % CNY66B CTR 100 - 200 % VCE = 5 V, IF = 10 mA SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time PARAMETER VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) td - 2.6 - μs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) tr - 2.4 - μs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) tf - 2.7 - μs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) ts - 0.3 - μs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) ton - 5 - μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) toff - 3 - μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) ton - 25 - μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) toff - 42.5 - μs IF 0 IF +5V IF IC = 5 mA; adjusted through input amplitude IC 0 tp t 100 % 90 % RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF 10 % 0 tr td ts t on 95 10900 Fig. 1 - Test Circuit, Non-Saturated Operation tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times IF +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation Document Number: 83540 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL Climatic classification According to IEC 68 part 1 Pollution degree According to DIN VDE 0109 Comparative tracking index UNIT 2 Insulation group IIIa Maximum rated withstanding isolation voltage VALUE 55 / 85 / 21 CTI 200 According to UL1577, t = 1 min VISO 8200 VRMS Tested withstanding isolation voltage According to UL1577, t = 1 s VISO 13 900 Vpeak Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 12 000 Vpeak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 VIORM 1450 Vpeak Tamb = 25 °C, VIO = 500 V RIO ≥ 1012 Ω Tamb = 100 °C, VIO = 500 V RIO ≥ 1011 Ω RIO ≥ Isolation resistance Tamb = TS, VIO = 500 V Output safety power Ω 109 PSO 250 mW Input safety current ISI 120 mA Input safety temperature TS 150 °C ≥ 9.5 mm ≥ 9.5 mm ≥ 14 mm ≥ 14 mm ≥ 17 mm Creepage distance CNY64 Clearance distance Creepage distance CNY65 Clearance distance Creepage distance CNY66 Clearance distance Insulation thickness ≥ 17 mm DTI ≥3 mm Input to output test voltage, method B VIORM x 1.875 = VPR, 100 % production test with tM = 1 s, partial discharge < 5 pC VPR 3375 Vpeak Input to output test voltage, method A VIORM x 1.6 = VPR, 100 % sample test with tM = 10 s, partial discharge < 5 pC VPR 2880 Vpeak Note • According to DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits VIOTM 250 225 t1, t2 t3 , t4 ttest tstres PSO (mW) 200 175 150 = 1 s to 10 s =1s = 10 s = 12 s Vpd 125 VIOWM VIORM 100 75 ISI (mA) 50 25 0 0 0 25 50 75 100 125 150 175 200 TSI - Safety Temperature(°C) Fig. 4 - Safety Derating Diagram 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 5 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5 (VDE 0884-5); IEC60747-5-5 Document Number: 83540 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors 1000 280 Coupled device ICEO - Collector Dark Current, with Open Base (nA) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 240 200 160 Phototransistor 120 IR-diode 80 40 25 50 75 10 100 Tamb - Ambient Temperature (°C) 21995 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 96 12000 Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 9 - Collector Dark Current vs. Ambient Temperature 1000 100 IC - Collector Current (mA) IF - Forward Current (mA) 100 1 0 0 100 10 1 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 96 11862 Fig. 7 - Forward Current vs. Forward Voltage 1.1 1.0 0.9 0.8 0.7 Normalized to CTR value: IF = 10 mA, VCE = 5 V, Tamb = 25 °C 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 96 11911 0.1 1 100 10 IF - Forward Current (mA) 100 VCE = 5 V IF = 10 mA 1.2 0.6 1 Fig. 10 - Collector Current vs. Forward Current Tamb - Ambient Temperature (°C) Fig. 8 - Normalized CTR (non-saturated) vs. Ambient Temperature IC - Collector Current (mA) 1.3 10 95 11012 1.5 1.4 VCE = 5 V 0.01 0.1 0.1 NCTR - Normalized CTR (non-saturated) VCE = 20 V IF = 0 IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0.1 95 11013 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 11 - Collector Current vs. Collector Emitter Voltage Document Number: 83540 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com 1.0 0.8 0.7 CTR = 50 % 0.6 0.5 0.4 0.3 0.2 20 % 0.1 10 % 0.0 1 10 100 IC - Collector Current (mA) 96 11912 CTR - Current Transfer Ratio (%) Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current 1000 VCE = 5 V 100 10 1 0.1 95 11015 1 10 50 toff 40 30 ton 20 Saturated operation VS = 5 V RL = 1 kΩ 10 0 0 5 100 IF - Forward Current (mA) Fig. 13 - Current Transfer Ratio vs. Forward Current 10 15 20 IF - Forward Current (mA) 95 11017 Fig. 14 - Turn-on / Turn-off Time vs. Collector Current ton / toff - Turn-On / Turn-Off Time (µs) VCEsat - Collector Emitter Saturation Voltage (V) 0.9 ton / toff - Turn-On / Turn-Off Time (µs) Vishay Semiconductors 20 Non-saturated operation VS = 5 V RL = 100 Ω ton 15 toff 10 5 0 0 95 11016 2 4 6 8 10 IC - Collector Current (mA) Fig. 15 - Turn-On / Turn-Off Time vs. Forward Current Document Number: 83540 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters FOR CNY64 12.8 ± 0.1 9.1 ± 0.3 6.01 ± 0.1 7.2 ± 0.1 10.16 ± 0.2 5.08 ± 0.2 0. 4 5 0. Weight: ca. 0.73 g A Cath Coll E technical drawings according to DIN specifications Drawing-No.: 6.544-5038.01-4 Issue: 2; 10.11.98 14765 Document Number: 83540 7 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters FOR CNY65 17.8 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 9.6 ± 0.1 15.24 ± 0.2 7.62 ± 0.2 0 technical drawings according to DIN specifications .4 5 0. A Weight: ca. 1.40 g Coll Cath E Drawing-No.: 6.544-5036.01-1 Issue: 2; 10.11.98 14763 PACKAGE DIMENSIONS in millimeters FOR CNY66 9.6 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 20.4 ± 0.1 17.8 ± 0.2 7.62 ± 0.2 technical drawings according to DIN specifications 4 0. Weight: ca. 1.70 g 0. 5 A Cath Coll E Drawing-No.: 6.544-5037.01-4 Issue: x; 10.11.98 14764 PACKAGE MARKING (example of CNY65A) CNY65A V YWW 84 Document Number: 83540 8 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 CNY64, CNY65, CNY66 www.vishay.com Vishay Semiconductors TUBE INFORMATION TYPE UNITS/TUBE TUBES/BOX UNITS/BOX 40 50 2000 CNY64 CNY65 30 35 1050 CNY66 25 35 875 0.6 15.3 8.7 13.2 With foamy rubber plugs Tolerance: ± 0.5 mm Length: 575 mm ± 2 mm 3.6 15914 Fig. 16 - Tube Dimensions SOLDER PROFILES HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Axis Title 300 10000 5s Floor life: unlimited Lead temperature 200 235 °C to 260 °C First wave Moisture sensitivity level 1, according to J-STD-020 1000 ca. 2 K/s ca. 200 K/s 150 Conditions: Tamb < 30 °C, RH < 85 % Full line: typical Dotted lines: process limits Second wave 1st line 2nd line 2nd line Temperature (°C) 250 100 °C to 130 °C 100 100 2 K/s 50 ca. 5 K/s Forced cooling 10 0 0 50 100 150 200 250 Time (s) 948626 Fig. 17 - Wave Soldering Double Wave Profile According to J-STD-020 for Through-Hole Devices Document Number: 83540 9 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.3, 24-Jun-2022 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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