CNY64ST

CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES Top View CNY64ST A • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak C • Thickness through insulation ≥ 3 mm • Creepage current resistance according to VDE 0303 / IEC 60112 comparative tracking index: CTI ≥ 475 CNY65ST C • Moisture sensitivity level MSL4 - Follow defined storage and requirements E 17187-6 soldering • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES APPLICATIONS 3D 3D 3D Models Models Related Documents • Solar and wind power diagnostic, monitoring, and communication equipment • Welding equipment • High voltage motors • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I to IV at mains voltage ≤ 300 V - for appl. class I to IV at mains voltage ≤ 600 V - for appl. class I to III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5 (VDE 0884-5) Footprints DESCRIPTION The CNY6XST, the high isolation voltage SMD version optocouplers consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: AGENCY APPROVALS • DIN EN 60747-5-5 (VDE 0884-5) Optocoupler for electrical safety requirements • IEC 60065 Safety for mains-operated household apparatus • UL / cUL 1577 • DIN EN 60747-5-5 (VDE 0884-5) electronic and related • VDE 0160 Electronic equipment for electrical power installation ORDERING INFORMATION CNY64ST C N Y 6 PART NUMBER # X X PACKAGE OPTION X S CNY65ST T CTR BIN 10.16 mm 15.24 mm CTR (%) AGENCY CERTIFIED/PACKAGE 5 mA UL, cUL, VDE 50 to 300 50 to 150 80 to 240 100 to 300 SMD-4 HV, 400 mil high isolation distance CNY64ST CNY64AYST CNY64ABST CNY64AGRST SMD-4 HV, 600 mil high isolation distance CNY65ST CNY65AYST CNY65ABST CNY65AGRST Rev. 1.2, 23-Mar-2022 Document Number: 82387 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER Total power dissipation Ambient temperature range Storage temperature range Soldering temperature TEST CONDITION tp ≤ 10 μs tp/T = 0.5, tp ≤ 10 ms See reflow profile in “Soldering Guidelines” SYMBOL VALUE UNIT VR IF IFSM Pdiss Tj 5 75 1.5 120 100 V mA A mW °C VCEO VECO IC ICM Pdiss Tj 32 7 50 100 130 100 V V mA mA mW °C Ptot Tamb Tstg 250 -55 to +85 -55 to +100 mW °C °C Tsld 245 °C Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector emitter leakage current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VR = 0 V, f = 1 MHz VF Cj - 1.32 50 1.6 - V pF IC = 1 mA IE = 100 μA VCE = 20 V, IF = 0 mA VCEO VECO ICEO 32 7 - - 200 V V nA IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz VCEsat fc Ck - 110 0.3 0.3 - V kHz pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER IC/IF Rev. 1.2, 23-Mar-2022 TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VCE = 5 V, IF = 5 mA CNY64ST CNY65ST CNY64AYST CNY65AYST CNY64ABST CNY65ABST CNY64AGRST CNY65AGRST CTR CTR CTR CTR CTR CTR CTR CTR 50 50 50 50 80 80 100 100 - 300 300 150 150 240 240 300 300 % % % % % % % % Document Number: 82387 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time PARAMETER VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) td - 2.6 - μs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) tr - 2.4 - μs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) tf - 2.7 - μs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) ts - 0.3 - μs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) ton - 5 - μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 3) toff - 3 - μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) ton - 25 - μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 4) toff - 42.5 - μs IF IF 0 0 +5V IF IC = 5 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs 50 100 Oscilloscope RL 1 M CL 20 pF 95 10900 Fig. 1 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % 10 % 0 Channel I Channel II tp IC tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation Rev. 1.2, 23-Mar-2022 Document Number: 82387 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL Climatic classification According to IEC 68 part 1 Pollution degree According to DIN VDE 0109 Comparative tracking index UNIT 2 Insulation group IIIa Maximum rated withstanding isolation voltage VALUE 55 / 85 / 21 CTI 475 According to UL1577, t = 1 min VISO 8200 VRMS Tested withstanding isolation voltage According to UL1577, t = 1 s VISO 13 900 Vpeak Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 12 000 Vpeak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 VIORM 1450 Vpeak Tamb = 25 °C, VIO = 500 V RIO ≥ 1012 Ω Tamb = 100 °C, VIO = 500 V RIO ≥ 1011 Ω RIO ≥ Isolation resistance Tamb = TS, VIO = 500 V Output safety power Ω 109 PSO 250 mW Input safety current ISI 120 mA Input safety temperature TS 150 °C ≥ 9.5 mm ≥ 9.5 mm ≥ 14 mm ≥ 14 mm Creepage distance CNY64 Clearance distance Creepage distance CNY65 Clearance distance DTI ≥3 mm Input to output test voltage, method B VIORM x 1.875 = VPR, 100 % production test with tM = 1 s, partial discharge < 5 pC VPR 3375 Vpeak Input to output test voltage, method A VIORM x 1.6 = VPR, 100 % sample test with tM = 10 s, partial discharge < 5 pC VPR 2880 Vpeak Insulation thickness Note • According to DIN EN 60747-5-5 (see Fig. 5). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits VIOTM 250 225 t1, t2 t3 , t4 ttest tstres PSO (mW) 200 175 150 = 1 s to 10 s =1s = 10 s = 12 s Vpd 125 VIOWM VIORM 100 75 ISI (mA) 50 25 0 0 0 25 50 75 100 125 150 175 200 Tamb (°C) 22292 Fig. 4 - Safety Derating Diagram Rev. 1.2, 23-Mar-2022 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 5 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5 (VDE 0884-5); IEC60747-5-5 Document Number: 82387 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors 30 280 IC - Collector Current (mA) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 240 Coupled device 200 160 Phototransistor 120 IR-diode 80 40 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA 25 50 0 100 75 22509 Tamb - Ambient Temperature (°C) 22293 Fig. 6 - Total Power Dissipation vs. Ambient Temperature 0.1 0.3 0.4 0.5 Tamb = -55 °C 10 Tamb = -40 °C Tamb = 0 °C Tamb = 25 °C Tamb = 50 °C 1 Tamb = 75 °C Tamb = 85 °C ICEO - Leakage Current (nA) 1000 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IF = 0 mA 100 10 1 VCE = 12 V VCE = 24 V 0.1 VCE = 40 V 0.01 -55 1.8 Fig. 7 - Forward Current vs. Forward Voltage IF = 30 mA 35 30 IF = 20 mA 25 20 IF = 15 mA 15 IF = 10 mA 10 5 IF = 5 mA 0 0 2 4 6 8 10 12 VCE - Collector Emitter Voltage (NS) (V) Fig. 8 - Collector Current vs. Collector Emitter Voltage (non-saturated) Rev. 1.2, 23-Mar-2022 -15 5 25 45 65 85 Fig. 10 - Leakage Current vs. Ambient Temperature NCTR - Normalized CTR (saturated) 45 40 -35 Tamb - Ambient Temperature (°C) VF - Forward Voltage (V) IC - Collector Current (mA) 0.2 VCE - Collector Emitter Voltage (sat) (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage 100 22508 IF = 2 mA 0 0 0 IF - Forward Current (mA) IF = 25 mA 25 1.2 IF = 10 mA VCE = 0.4 V 1.0 IF = 5 mA 0.8 0.6 IF = 1 mA 0.4 0.2 0 -55 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C -35 -15 5 25 45 65 85 Tamb - Ambient Temperature (°C) Fig. 11 - Normalized CTR (saturated) vs. Ambient Temperature Document Number: 82387 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors 1.2 1000 IF = 10 mA NCTR - Normalized CTR (non-saturated) VCE = 5 V VCE = 5 V 1.0 IF = 5 mA FCTR (kHz) 0.8 0.6 IF = 1 mA 0.4 100 10 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0.2 0 -55 1 -35 -15 5 25 45 65 85 Tamb - Ambient Temperature (°C) 0.1 Fig. 12 - Normalized CTR (non-saturated) vs. Ambient Temperature 20 VCE = 5 V Tamb = 25 °C 1.2 -20 Tamb = 50 °C 1.0 0.8 Tamb = -40 °C 0.6 Tamb = -55 °C Tamb = 75 °C 0.4 -60 -80 -100 -140 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0 -40 -120 Tamb = 85 °C 0.2 100 VCE = 5 V 0 Tamb = 0 °C Phase (deg) NCTR - Normalized CTR (non-saturated) 10 Fig. 15 - FCTR vs. Collector Current 1.4 -160 -180 0.1 1 10 100 IF - Forward Current (mA) 1 1.2 22516 Tamb = 50 °C 0.8 0.6 Tamb = -40 °C Tamb = -55 °C 0.4 Tamb = 75 °C Tamb = 85 °C 0.2 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0 0.1 1 10 VCE = 5 V, IF = 10 mA Fig. 14 - Normalized CTR (saturated) vs. Forward Current toff 100 10 ton 1 0.1 100 IF - Forward Current (mA) Rev. 1.2, 23-Mar-2022 1000 1000 Tamb = 0 °C ton, toff - Switching Time (μs) 1.0 100 Fig. 16 - FCTR vs. Phase Angle Tamb = 25 °C VCE = 0.4 V 10 Frequency (kHz) Fig. 13 - Normalized CTR (non-saturated) vs. Forward Current NCTR - Normalized CTR (saturated) 1 IC - Collector Current (mA) 22515 22517 0.1 1 10 100 RL - Load Resistance (kΩ) Fig. 17 - Switching Time vs. Load Resistance Document Number: 82387 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters FOR CNY64A...ST 14.4 ± 0.3 6 ± 0.2 7.2 ± 0.2 12.8 ± 0.2 7.05 ± 0.4 0.4 ± 0.1 Z 0.5 ± 0.2 2.1 ± 0.5 5.08 ± 0.4 Leads coplanarity 0.1 max. Anode Cathode Z 10:1 Collector Emitter Recommended footprint 15.9 technical drawings according to DIN specifications Rev. 1.2, 23-Mar-2022 2.9 5.08 9 Document Number: 82387 7 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters FOR CNY65A...ST 19.4 ± 0.3 17.8 ± 0.2 6.1 ± 0.2 9.6 ± 0.2 7.15 ± 0.4 0.4 ± 0.1 Z 0.5 ± 0.2 2.1 ± 0.5 7.62 ± 0.4 Leads coplanarity 0.1 max. Anode Cathode Z 10:1 Collector Recommended footprint Emitter 20.9 14 2.9 7.62 technical drawings according to DIN specifications PACKAGE MARKING (Example) CNY65AY V YWW 84 Note • The “T” at the end of the product designation is not marked on the package Rev. 1.2, 23-Mar-2022 Document Number: 82387 8 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors TAPE DIMENSIONS in millimeters FOR CNY64A...ST 8 Ø 1.55 ± 0.05 1.75 ± 0.1 2 ± 0.15 7.6 4 ± 0.1 0.4 ± 0.05 Top cover tape 14.2 ± 0.10 13.2 25.5 32 ± 0.3 1.75 16 ± 0.1 R0.78 Leader (start) min. 400 mm without devices Trailer (end) min. 200 mm without devices Ø 2 min. 5.65 Direction of feed TAPE DIMENSIONS in millimeters FOR CNY65A...ST 8 Ø 1.55 ± 0.05 2 ± 0.15 9.9 4 ± 0.1 0.4 ± 0.05 1.75 ± 0.1 Top cover tape 14.2 ± 0.10 18.1 25.5 32 ± 0.3 1.75 R0.78 16 ± 0.1 Ø 2 min. 5.65 Direction of feed Leader (start) min. 400 mm without devices Trailer (end) min. 200 mm without devices Drawing-No.: 9.700-5376.01-4 Issue: 1; 23.05.11 Rev. 1.2, 23-Mar-2022 technical drawings according to DIN specifications Document Number: 82387 9 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters Reel size "Y" T: Ø 330 ± 2 Unreel direction 2± Ø 60 min. Tape position coming out from reel ØY 0 .5 Ø 21 ± 0.8 Ø 13 ± 0.2 Label posted here 32.4 + 2/0 38.4 max. Empty leader 400 mm min. Parts mounted 100 mm min. with cover tape Leader and trailer tape: Direction of pulling out Empty trailer 200 mm min. technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Drawing-No.: 9.800-5120.01-4 Issue: 1; 23.05.11 TAPE AND REEL INFORMATION TYPE UNITS/REEL REELS/BOX UNITS/BOX CNY64 400 2 800 CNY65 400 2 800 Rev. 1.2, 23-Mar-2022 Document Number: 82387 10 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST www.vishay.com Vishay Semiconductors SOLDERING GUIDELINES Soldering Condition Floor Life The CNY64AxST, CNY65AxST are lead (Pb)-free devices. They are suitable for reflow soldering. However due to large package size, the peak package body temperature should not go above 245 °C. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 300 Floor life: 72 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 4, according to J-STD-020. Temperature (°C) 250 245 °C 240 °C 217 °C In case of moisture absorption devices should be baked before soldering according to the recommended conditions shown below 200 max. 20 s 150 max. 100 s max. 120 s 48 h at 125 °C ± 5 °C, RH < 5% 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s max. 2 cycles allowed 0 0 22550 50 100 150 200 250 300 Time (s) Drypack Devices are packed in moisture barrier bags (MBB) to prevent moisture absorption during transportation and storage. Each bag contains a desiccant bag. Rev. 1.2, 23-Mar-2022 Drying (Not suitable for tape and reel) In case the floor time has not exceeded 10 days the units can be baked in tape and reel according to the following conditions 168 h at 60 °C ± 5 °C, RH < 5 % (Not suitable, if the floor time was exceeded by more than 10 days, or the allowed factory condition is exceeded) Document Number: 82387 11 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000