CNY65Exi
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Vishay Semiconductors
Optocoupler, Phototransistor Output, ATEX Certified
FEATURES
Top view
A (±)
• Suitable for intrinsic safe circuits for gas and
dust
C
• Gas safety provision: II (1) G [Ex ia Ga] IIC
• Dust safety provision: II (1) D [Ex ia Da] IIIC
• Conforms to latest EN 60079-0 : 2018
C (±)
• Qualified for continuously, longterm, or
frequently dangerous explosive environments, zone 0
E
• Isolation voltage (VISO) of 11 600 Vpeak for 1 minute
• Distance from emitter to detector through insulation
≥ 3 mm
LINKS TO ADDITIONAL RESOURCES
• CTR from 50 % to 300 %
3D 3D
3D Models
Models
Related
Documents
• Very low coupling capacity (CK)
Footprints
- 0.3 pF superior noise immunity between input and
output pins
DESCRIPTION
The CNY65Exi consists of a phototransistor optically
coupled to an infrared-emitting diode in a 4 pin plastic
package. The components are mounted opposite one
another, with a distance between input and output of
> 3.0 mm; meeting the highest of safety requirements.
The CNY65Exi is ATEX certificated for explosive
atmospheres according to the Directive 2014/34/EU
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Electronics used in potentially explosive gas and dust
environments
- Safety related process automation and instrumentation
- Natural gas metering and flow measurement
AGENCY APPROVALS
- Power and motor switching
• ATEX
:PTB 03 ATEX 2033 U
EN 60079-0 : 2018
EN 60079-11 : 2012
EN 60079-26 : 2015
- Power supplies, metering, and data acquisition
- Lighting and signaling
- Petrol and grain transport and storage
ORDERING INFORMATION
DIP-4
C
N
Y
PART NUMBER
6
5
X
CTR
BIN
AGENCY CERTIFIED / PACKAGE
E
x
i
PACKAGE OPTION
15.24 mm
CTR (%)
ATEX
50 to 300
100 to 200
DIP-4, HV, high isolation distance
CNY65Exi
CNY65BExi
Rev. 2.9, 24-Jan-2024
Document Number: 83541
1
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CNY65Exi
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
75
mA
tp ≤ 10 μs
IFSM
1.5
A
Pdiss
120
mW
Tj
100
°C
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
7
V
IC
50
mA
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
ICM
100
mA
Pdiss
130
mW
Tj
100
°C
Junction temperature
COUPLER
Total power dissipation
Ptot
250
mW
Ambient temperature range
Tamb
-55 to +85
°C
Tstg
-55 to +100
°C
Tsld
260
°C
Storage temperature range
Soldering temperature
2 mm from case, t ≤ 10 s
Note
• Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 50 mA
VF
-
1.25
1.6
V
INPUT
Forward voltage
OUTPUT
Collector emitter voltage
IC = 1 mA
VCEO
32
-
-
V
Emitter collector voltage
IE = 100 μA
VECO
7
-
-
V
VCE = 20 V, If = 0, E = 0
ICEO
-
-
200
nA
Collector saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
-
-
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
-
-
kHz
f = 1 MHz
Ck
-
0.3
-
pF
Collector dark current
COUPLER
Coupling capacitance
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
IC/IF
Rev. 2.9, 24-Jan-2024
TEST CONDITION
VCE = 5 V, IF = 10 mA
PART
SYMBOL
MIN.
TYP.
MAX.
CNY65Exi
CTR
50
100
300
UNIT
%
CNY65BExi
CTR
100
-
200
%
Document Number: 83541
2
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CNY65Exi
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SAFETY AND INSULATION RATINGS
PARAMETER
SYMBOL
Climatic classification
According to IEC 68 part 1
Pollution degree
According to DIN VDE 0109
Comparative tracking index
UNIT
2
Insulation group IIIa
Maximum rated withstanding isolation voltage
VALUE
40 / 85 / 21
CTI
t = 1 min
475
VISO
8200
VRMS
Maximum transient isolation voltage
VIOTM
12 000
Vpeak
Maximum repetitive peak isolation voltage
VIORM
1450
Vpeak
Tamb = 25 °C, VIO = 500 V
RIO
≥ 1012
Ω
Tamb = 100 °C, VIO = 500 V
RIO
≥ 1011
Ω
Tamb = TS, VIO = 500 V
RIO
≥ 109
Ω
Isolation resistance
Output safety power
PSO
250
mW
Input safety current
Isi
120
mA
Input safety temperature
TS
150
°C
≥ 14
mm
≥ 14
mm
≥3
mm
Creepage distance
Clearance distance
Insulation thickness
DTI
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
PARAMETER
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 1)
td
-
2.6
-
μs
Rise time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 1)
tr
-
2.4
-
μs
Fall time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 1)
tf
-
2.4
-
μs
Storage time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 1)
ts
-
0.3
-
μs
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 1)
ton
-
5
-
μs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω, (see Fig. 1)
toff
-
3
-
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 2)
ton
-
25
-
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see Fig. 2)
toff
-
42.5
-
μs
IF
0
IF
+5V
IF
IC = 5 mA; adjusted through
input amplitude
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
RG = 50
tp
= 0.01
T
tp = 50 µs
t p = 50 µs
Channel I
Channel I
Channel II
50
100
Oscilloscope
RL 1 M
CL 20 pF
95 10900
Fig. 1 - Test Circuit, Non-Saturated Operation
Rev. 2.9, 24-Jan-2024
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 2 - Test Circuit, Saturated Operation
Document Number: 83541
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CNY65Exi
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Vishay Semiconductors
IF
0
tp
IC
t
100 %
90 %
10 %
0
tr
td
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
t
tf
t off
ts
t on
Storage time
Fall time
Turn-off time
ts
tf
t off (= ts + tf)
96 11698
Fig. 3 - Switching Times
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
1.5
2nd line
Ptot - Total Power Dissipation (mW)
Coupled device
250
1000
1st line
2nd line
200
Phototransistor
150
100
100
IR diode
50
NCTR - Normalized CTR
(non-saturated)
10000
300
1.3
1.2
1.1
1.0
0.9
0.8
0.7
Normalized to CTR value:
IF = 10 mA, VCE = 5 V, Tamb = 25 °C
0.6
0.5
-30 -20 -10 0 10 20 30 40 50 60 70 80
10
0
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
96 11911
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Tamb - Ambient Temperature (°C)
Fig. 6 - Relative Current Transfer Ratio vs.
Ambient Temperature
1000
ICEO - Collector Dark Current,
with Open Base (nA)
1000
IF - Forward Current (mA)
VCE = 5 V
IF = 10 mA
1.4
100
10
1
VCE = 20 V
IF = 0
100
10
1
0.1
0
96 11862
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
Fig. 5 - Forward Current vs. Forward Voltage
Rev. 2.9, 24-Jan-2024
0 10 20 30 40 50 60 70 80 90 100
96 12000
Tamb - Ambient Temperature (°C)
Fig. 7 - Collector Dark Current vs. Ambient Temperature
Document Number: 83541
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CNY65Exi
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Vishay Semiconductors
CTR - Current Transfer Ratio (%)
VCE = 5 V
10
1
0.1
1
100
10
IF - Forward Current (mA)
95 11012
Fig. 8 - Collector Current vs. Forward Current
IC - Collector Current (mA)
100
IF = 50 mA
10 mA
10
5 mA
2 mA
1
1 mA
0.1
0.1
95 11013
1
100
10
VCE - Collector Emitter Voltage (V)
Fig. 9 - Collector Current vs. Collector Emitter Voltage
1.0
VCEsat - Collector Emitter
Saturation Voltage (V)
0.9
0.8
0.7
CTR = 50 %
0.6
0.5
0.4
0.3
0.2
20 %
0.1
10 %
0.0
1
96 11912
10
100
IC - Collector Current (mA)
Fig. 10 - Collector Emitter Saturation Voltage vs.
Collector Current
Rev. 2.9, 24-Jan-2024
1000
VCE = 5 V
100
10
1
0.1
1
100
10
IF - Forward Current (mA)
95 11015
Fig. 11 - Current Transfer Ratio vs. Forward Current
ton / toff - Turn-On / Turn-Off Time (µs)
0.01
0.1
50
toff
40
30
ton
20
Saturated operation
VS = 5 V
RL = 1 kΩ
10
0
0
5
10
15
20
IF - Forward Current (mA)
95 11017
Fig. 12 - Turn-On / Turn-Off Time vs. Forward Current
ton / toff - Turn-On / Turn-Off Time (µs)
IC - Collector Current (mA)
100
20
Non-saturated
operation
VS = 5 V
RL = 100 Ω
ton
15
toff
10
5
0
0
95 11016
2
4
6
8
10
IC - Collector Current (mA)
Fig. 13 - Turn-On / Turn-Off Time vs. Collector Current
Document Number: 83541
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For technical questions, contact: optocoupleranswers@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY65Exi
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Vishay Semiconductors
PACKAGE DIMENSIONS (in millimeters)
17.8 ± 0.1
9.1 ± 0.3
6.1 ± 0.1
9.6 ± 0.1
15.24 ± 0.2
7.62 ± 0.2
0.
technical drawings
according to DIN
specifications
4
5
0.
A
Coll
Cath
Weight: ca. 1.40 g
E
Drawing-No.: 6.544-5036.01-1
Issue: 2; 10.11.98
14763
CNY65BExi
V YWW J 84
II (1) G [Ex ia Ga] IIC
II (1) D [Ex ia Da] IIIC
PTB 03 ATEX 2033 U
VISHAY
PACKAGE MARKING (example of CNY65BExi)
Theresienstrasse 2
74072 Heilbronn, Germany
Fig. 14 - Top Marking
Fig. 15 - Side Marking
TUBE INFORMATION
TYPE
CNY65Exi
Rev. 2.9, 24-Jan-2024
UNITS/TUBE
TUBES/BOX
UNITS/BOX
30
35
1050
Document Number: 83541
6
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0.6
15.3
8.7
13.2
With foamy rubber plugs
Tolerance: ± 0.5 mm
Length: 575 mm ± 2 mm
3.6
15914
Fig. 16 - CNY65Exi
SOLDER PROFILES
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
Axis Title
300
Floor life: unlimited
10000
5s
Conditions: Tamb < 30 °C, RH < 85 %
Lead temperature
200
Moisture sensitivity level 1, according to J-STD-020
235 °C to
260 °C
First wave
1000
ca. 2 K/s
ca. 200 K/s
150
Full line: typical
Dotted lines:
process limits
Second
wave
1st line
2nd line
2nd line
Temperature (°C)
250
100 °C to
130 °C
100
100
2 K/s
50
ca. 5 K/s
Forced cooling
10
0
0
50
100
150
200
250
Time (s)
948626
Fig. 17 - Wave Soldering Double Wave Profile According to
J-STD-020 for Through-Hole Devices
Rev. 2.9, 24-Jan-2024
Document Number: 83541
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Document Number: 91000
1
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Revision: 01-Jan-2024