CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
B
6
C
5
E
4
• Isolation materials according to UL 94-VO
• Pollution degree
IEC 60664)
2
(DIN/VDE
0110/resp.
• Climatic classification 55/110/21 (IEC 60068
part 1)
• Low temperature coefficient of CTR
1
2
3
A (+) C (-) NC
V
D E
18537_5
17201_4
• CTR offered in 3 groups
• Rated
isolation
voltage
(RMS
VIOWM = 600 VRMS (848 V peak)
• Rated
recurring
VIORM = 600 VRMS
• Rated
impulse
VIOTM = 6 kVpeak
DESCRIPTION
peak
voltage
includes
DC)
voltage
(repetitive)
(transient
overvoltage)
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
The CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB,
CNY75GC consists of a phototransistor optically coupled to
a gallium arsenide infrared-emitting diode in a 6 pin plastic
dual inline package.
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 325
AGENCY APPROVALS
• Compliant to RoHS directive 2002/95/EC
accordance to WEEE 2002/96/EC
• Thickness through insulation ≥ 0.4 mm
and
in
• UL1577, file no. E52744, double protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950
(BS 7002), pending
APPLICATIONS
• DIN EN 60747-5-5 (VDE 0884)
• Line receiver
• FIMKO (SETI): EN 60950, certificate no. FI25155
• Computer peripheral interface
• Switch-mode power supplies
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5 (VDE 0884)
ORDER INFORMATION
(1)
PART
REMARKS
CNY75A
CNY75B
CNY75C
CNY75GA
CNY75GB
CNY75GC
CTR 63 % to 125 %, DIP-6
CTR 100 % to 200 %, DIP-6
CTR 160 % to 320 %, DIP-6
CTR 63 % to 125 %, DIP-6, 400 mil
CTR 100 % to 200 %, DIP-6, 400 mil
CTR 160 % to 320 %, DIP-6, 400 mil
Note
(1) G = leadform 10.16 mm; G is not marked on the body.
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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83536
Rev. 2.0, 28-Oct-09
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
IF
IFSM
Pdiss
Tj
5
60
3
70
125
V
mA
A
mW
°C
VCBO
VCEO
VECO
IC
ICM
Pdiss
Tj
70
70
7
50
100
70
125
V
V
V
mA
mA
mW
°C
VISO
Ptot
Tamb
Tstg
Tsld
5000
200
- 55 to + 110
- 55 to + 125
260
VRMS
mW
°C
°C
°C
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
tp ≤ 10 µs
OUTPUT
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
tp/T = 0.5, tp ≤ 10 ms
COUPLER
AC isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature (2)
2 mm from case, t ≤ 10 s
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS
PARAMETER
(1)
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
1.25
1.6
10
V
µA
pF
INPUT
IF = 50 mA
VR = 6 V
VR = 0 V, f = 1 MHz
VF
IR
Cj
IC = 100 µA
IC = 1 mA
IE = 100 µA
VCE = 20 V, IF = 0 A
VCBO
VCEO
VECO
ICEO
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
f = 1 MHz
Ck
0.6
pF
Forward voltage
Reverse current
Junction capacitance
50
OUTPUT
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
70
70
7
150
V
V
V
nA
0.3
V
COUPLER
Coupling capacitance
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
(1)
Document Number: 83536
Rev. 2.0, 28-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
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255
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 5 V, IF = 1 mA
IC/IF
VCE = 5 V, IF = 10 mA
PART
SYMBOL
MIN.
CNY75GA
CTR
15
TYP.
MAX.
UNIT
%
CNY75GB
CTR
30
%
CNY75GC
CTR
60
CNY75GA
CTR
63
125
%
CNY75GB
CTR
100
200
%
CNY75GC
CTR
160
320
%
MAX.
UNIT
%
SWITCHING CHARACTERISTICS
PARAMETER
Current time
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
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256
TEST CONDITION
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 100 Ω
VCC = 5 V, RL = 1 kΩ
VCC = 5 V, RL = 1 kΩ
PART
SYMBOL
CNY75GA
IF
MIN.
TYP.
10
mA
CNY75GB
IF
10
mA
CNY75GC
IF
10
mA
CNY75GA
td
2
µs
CNY75GB
td
2.5
µs
CNY75GC
td
2.8
µs
CNY75GA
tr
2.5
µs
CNY75GB
tr
3
µs
CNY75GC
tr
4.2
µs
CNY75GA
tf
2.7
µs
CNY75GB
tf
3.7
µs
CNY75GC
tf
4.7
µs
CNY75GA
ts
0.3
µs
CNY75GB
ts
0.3
µs
CNY75GC
ts
0.3
µs
CNY75GA
ton
4.5
µs
CNY75GB
ton
5.5
µs
CNY75GC
ton
7
µs
CNY75GA
toff
3
µs
CNY75GB
toff
4
µs
CNY75GC
toff
5
µs
CNY75GA
ton
10
µs
CNY75GB
ton
16.5
µs
CNY75GC
ton
11
µs
CNY75GA
toff
25
µs
CNY75GB
toff
20
µs
CNY75GC
toff
37.5
µs
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83536
Rev. 2.0, 28-Oct-09
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
MAXIMUM SAFETY RATINGS
PARAMETER
(1)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF
130
mA
Pdiss
265
mW
VIOTM
6
kV
Tsi
150
°C
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
Note
(1) According DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety
ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage routine test
PARAMETER
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 1)
VIOTM
6
kV
Vpd
1.3
kV
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb ≤ 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb ≤ 150 °C
(construction test only)
RIO
109
Ω
Insulation resistance
TYP.
MAX.
UNIT
VIOTM
t1, t2
t3 , t4
ttest
tstres
= 1 to 10 s
=1s
= 10 s
= 12 s
VPd
VIOWM
VIORM
0
13930
t3 ttest t4
t1
tTr = 60 s
t2
t stres
t
Fig. 1 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC60747
Document Number: 83536
Rev. 2.0, 28-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
257
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
PACKAGE DIMENSIONS in millimeters
DIP-6
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
0.5 ± 0.1
1.2 ± 0.1
14771_2
6
5
1
2 3
4.5 ± 0.3
2.8 ± 0.15
4.5 ± 0.3
0.25
4
7.62 to 9.5 typ.
DIP-6, 400 mil
7.62 typ.
7.12 ± 0.3
3.5 ± 0.3
6.5 ± 0.3
0.5 ± 0.1
1.2 ± 0.1
4.5 ± 0.3
2.8 ± 0.15
4.5 ± 0.3
0.25
10.16 (typ.)
14771_1
6
5
4
1
2 3
PACKAGE MARKING
CNY75A
V YWW 24
21764-29
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258
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83536
Rev. 2.0, 28-Oct-09
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Revision: 01-Jan-2022
1
Document Number: 91000